Littelfuse IXTP76P10T Power MOSFET P Channel Enhancement Mode with 100V VDSS and Low Gate Charge QG
Key Attributes
Model Number:
IXTP76P10T
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
38A
RDS(on):
25mΩ@10V,0.5·ID25
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
275pF@10V
Number:
1 P-Channel
Output Capacitance(Coss):
890pF
Input Capacitance(Ciss):
58nF
Pd - Power Dissipation:
298W
Gate Charge(Qg):
197nC@10V
Mfr. Part #:
IXTP76P10T
Package:
TO-220AB
Product Description
Product Overview
The IXYS TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated series, including models IXTT76P10THV, IXTA76P10T, IXTP76P10T, and IXTH76P10T, offers high performance with a VDSS of -100V and ID25 of -76A. Key advantages include an extended FBSOA, fast intrinsic diode, and low RDS(ON) and QG, making them suitable for high-side switching, push-pull amplifiers, DC choppers, automatic test equipment, current regulators, and battery charger applications. These devices are available in international standard packages and are avalanche rated.
Product Attributes
- Brand: IXYS
- Certifications: Covered by one or more of the following U.S. patents: 4,835,592, 4,860,072, 4,881,106, 4,931,844, 5,017,508, 5,034,796, 5,049,961, 5,063,307, 5,187,117, 5,237,481, 5,381,025, 5,486,715, 6,162,665, 6,259,123 B1, 6,306,728 B1, 6,404,065 B1, 6,534,343, 6,583,505, 6,683,344, 6,710,405 B2, 6,710,463, 6,727,585, 6,759,692, 6,771,478 B2, 7,005,734 B2, 7,063,975 B2, 7,071,537 B2.
Technical Specifications
| Symbol | Test Conditions | IXTT76P10THV | IXTA76P10T | IXTP76P10T | IXTH76P10T | Min. | Typ. | Max. | |
| VDSS | TJ = 25C to 150C | -100 | V | ||||||
| VDGR | TJ = 25C to 150C, RGS = 1M | -100 | V | ||||||
| VGSS | Continuous | 15 | V | ||||||
| VGSM | Transient | 25 | V | ||||||
| ID25 | TC = 25C | -76 | A | ||||||
| IDM | TC = 25C, Pulse Width Limited by TJM | -230 | A | ||||||
| IA | TC = 25C | -38 | A | ||||||
| EAS | TC = 25C | 1 | J | ||||||
| PD | TC = 25C | 298 | W | ||||||
| TJ | -55 ... +150 | C | |||||||
| TJM | 150 | C | |||||||
| Tstg | -55 ... +150 | C | |||||||
| TL | Maximum Lead Temperature for Soldering | 300 | C | ||||||
| TSOLD | 1.6 mm (0.062in.) from Case for 10s | 260 | C | ||||||
| Md | Mounting Torque (TO-220 & TO-247) | 1.13 | Nm/lb.in. | ||||||
| Weight | TO-263 | 2.5 g | |||||||
| Weight | TO-220 | 3.0 g | |||||||
| Weight | TO-268HV | 4.0 g | |||||||
| Weight | TO-247 | 6.0 g | |||||||
| BVDSS | VGS = 0V, ID = - 250A | -100 | V | ||||||
| VGS(th) | VDS = VGS, ID = - 250A | -2.0 | -4.0 | V | |||||
| IGSS | VGS = 15V, VDS = 0V | 100 | nA | ||||||
| IDSS | VDS = VDSS, VGS = 0V | -15 | A | ||||||
| IDSS | TJ = 125C | -750 | A | ||||||
| RDS(on) | VGS = -10V, ID = 0.5 ID25, Note 1 | 25 | m | ||||||
| gfs | VDS = -10V, ID = 0.5 ID25, Note 1 | 35 | 58 | S | |||||
| Ciss | VGS = 0V, VDS = -25V, f = 1MHz | 13.7 | nF | ||||||
| Coss | VGS = 0V, VDS = -25V, f = 1MHz | 890 | pF | ||||||
| Crss | VGS = 0V, VDS = -25V, f = 1MHz | 275 | pF | ||||||
| td(on) | 25 | ns | |||||||
| tr | 40 | ns | |||||||
| td(off) | 52 | ns | |||||||
| tf | 20 | ns | |||||||
| Qg(on) | 197 | nC | |||||||
| Qgs | VGS = -10V, VDS = 0.5 VDSS, ID = 0.5 ID25 | 65 | nC | ||||||
| Qgd | VGS = -10V, VDS = 0.5 VDSS, ID = 0.5 ID25 | 65 | nC | ||||||
| RthJC | 0.42 | C/W | |||||||
| RthCS | TO-220 | 0.50 C/W | |||||||
| RthCS | TO-247 | 0.21 C/W | |||||||
| IS | VGS = 0V | -76 | A | ||||||
| ISM | Repetitive, Pulse Width Limited by TJM | -304 | A | ||||||
| VSD | IF = - 38A, VGS = 0V, Note 1 | -1.3 | V | ||||||
| trr | 70 | ns | |||||||
| QRM | 215 | nC | |||||||
| IRM | -6 | A | |||||||
2410121317_Littelfuse-IXTP76P10T_C25093118.pdf
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