Silicon Controlled Rectifier KY TYN8016 80 Amp 1600 Volt TO247S Package for Vacuum and Motor Control

Key Attributes
Model Number: TYN8016
Product Custom Attributes
Holding Current (Ih):
150mA
Voltage - On State(Vtm):
1.8V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
80A
Peak Off - State Voltage(Vdrm):
1.6kV
Current - Surge(Itsm@f):
800A
SCR Type:
1 SCR
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.5V
Mfr. Part #:
TYN8016
Package:
TO-247S
Product Description

ShenZhenHanKingyuan Electronic SCRs Standard SCRs TYN8012 Series

The TYN8012 Series from ShenZhenHanKingyuan Electronic are standard 80A SCRs designed for various applications including washing machines, vacuums, massagers, solid-state relays, and AC motor speed regulation. These SCRs offer a gate trigger voltage (VGT) of 1.5V and repetitive peak off-state voltages (VDRM/VRRM) of 1200V and 1600V.

Product Attributes

  • Brand: ShenZhenHanKingyuan Electronic
  • Series: TYN8012 Series
  • Origin: Shenzhen
  • Trademark: KY logo is a registered trademark

Technical Specifications

Model VDRM/VRRM (V) IT(RMS) (A) VGT (V) Package
TYN8012 1200 80 1.5 TO-247S
TYN8016 1600 80 1.5 TO-247S
Parameter Conditions Value Unit
Repetitive Peak Off-State Voltage 1200, 1600 V
R.M.S On-State Current 80 A
Surge On-State Current F=50Hz,tp=10ms/8.3ms 800 A
It for fusing Tp=10ms 7800 As
Average Gate Power Dissipation Tj=125C 1 W
Peak Gate Power Dissipation Tj=125C 5 W
Peak Gate Current tp=10us 4 A
Operating Junction Temperature -40~125 C
Storage Temperature -40~150 C
Repetitive Peak Off-State Current Tc=25C 50 uA
Repetitive Peak Off-State Current Tc=125C 10 mA
Repetitive Peak Reverse Current Tc=25C 50 uA
Repetitive Peak Reverse Current Tc=125C 10 mA
Forward "on" voltage IT=100A tp=380us 1.8 V
Gate nontrigger voltage VD=VDRM,Tj=125C, RL=3.3K 0.25 V
Latching current IG=1.2IGT 200 mA
Holding current VD=12V ,IGT=0.1A 150 mA
Gate trigger voltage VD=12V 1.5 V
Gate trigger current VD=12V,IT=0.1A 80 mA
Critical-rate of rise of commutation voltage VD=2/3VDRM,Tj=125C,gate open circuit 1000 V/us
Critical-rate of rise of commutation current IG=2XIG,tr100us, Tj=125C 150 A/us
Thermal resistance Junction to case 0.43 C/W

2410121248_KY-TYN8016_C5448783.pdf

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