N Channel Enhancement Mode MOSFET IXFK150N30X3 X3 Class HiPerFET with Low RDS ON and Avalanche Rating
Key Attributes
Model Number:
IXFK150N30X3
Product Custom Attributes
Drain To Source Voltage:
300V
Current - Continuous Drain(Id):
75A
Gate Threshold Voltage (Vgs(th)):
2.5V
Pd - Power Dissipation:
890W
Mfr. Part #:
IXFK150N30X3
Package:
TO-264
Product Description
Product Overview
The IXFT150N30X3HV, IXFH150N30X3, and IXFK150N30X3 are high-performance N-Channel Enhancement Mode X3-Class HiPerFETTM Power MOSFETs designed for demanding applications. They feature international standard packages, low RDS(ON) and QG, avalanche rating, and low package inductance, offering high power density, ease of mounting, and space savings. These MOSFETs are ideal for switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics and servo controls.
Product Attributes
- Brand: IXYS
- Origin: USA (implied by patent information)
- Certifications: U.S. Patents (listed in source)
Technical Specifications
| Model | VDSS (V) | ID25 (A) | RDS(on) (m) | Package | Features |
| IXFT150N30X3HV | 300 | 150 | 8.3 | TO-268HV | International Standard Packages, Low RDS(ON) and QG, Avalanche Rated, Low Package Inductance |
| IXFH150N30X3 | 300 | 150 | 8.3 | TO-247 | International Standard Packages, Low RDS(ON) and QG, Avalanche Rated, Low Package Inductance |
| IXFK150N30X3 | 300 | 150 | 8.3 | TO-264P | International Standard Packages, Low RDS(ON) and QG, Avalanche Rated, Low Package Inductance |
| Symbol | Test Conditions | Characteristic Values (TJ = 25C, Unless Otherwise Specified) | Min. | Typ. | Max. | Unit |
| BVDSS | VGS = 0V, ID = 1mA | Drain-Source Breakdown Voltage | 300 | V | ||
| VGS(th) | VDS = VGS, ID = 4mA | Gate Threshold Voltage | 2.5 | 4.5 | V | |
| IGSS | VGS = 20V, VDS = 0V | Gate-Source Leakage Current | 100 | nA | ||
| IDSS | VDS = VDSS, VGS = 0V | Drain-Source Leakage Current | 25 | A | ||
| IDSS | VDS = VDSS, VGS = 0V, TJ = 125C | Drain-Source Leakage Current | 1 | mA | ||
| RDS(on) | VGS = 10V, ID = 0.5 ID25, Note 1 | Drain-Source On-State Resistance | 6.6 | 8.3 | m |
| Symbol | Test Conditions | Maximum Ratings | Unit |
| VDSS | TJ = 25C to 150C | 300 | V |
| VDGR | TJ = 25C to 150C, RGS = 1M | 300 | V |
| VGSS | Continuous | 20 | V |
| VGSM | Transient | 30 | V |
| ID25 | TC = 25C | 150 | A |
| IDM | TC = 25C, Pulse Width Limited by TJM | 400 | A |
| IA | TC = 25C | 75 | A |
| EAS | TC = 25C | 2 | J |
| dv/dt | IS IDM, VDD VDSS, TJ 150C | 20 | V/ns |
| PD | TC = 25C | 890 | W |
| TJ | -55 ... +150 | C | |
| TJM | 150 | C | |
| Tstg | -55 ... +150 | C | |
| TL | Maximum Lead Temperature for Soldering | 300 | C |
| TSOLD | 1.6 mm (0.062in.) from Case for 10s | 260 | C |
| Md | Mounting Torque (TO-247 & TO-264) | 1.13 / 10 | Nm/lb.in |
| Weight | TO-268HV | 4 | g |
| Weight | TO-247 | 6 | g |
| Weight | TO-264P | 10 | g |
| Symbol | Test Conditions | Characteristic Values (TJ = 25C, Unless Otherwise Specified) | Min. | Typ. | Max. | Unit |
| IS | VGS = 0V | Source Current | 150 | A | ||
| ISM | Repetitive, pulse Width Limited by TJM | Peak Source Current | 600 | A | ||
| VSD | IF = IS, VGS = 0V, Note 1 | Forward Voltage Drop | 1.4 | V | ||
| trr | IF = 75A, -di/dt = 100A/s | Reverse Recovery Time | 167 | ns | ||
| QRM | VR = 100V | Reverse Recovery Charge | 1100 | nC | ||
| IRM | Reverse Recovery Current | 13 | A |
| Symbol | Test Conditions | Characteristic Values (TJ = 25C, Unless Otherwise Specified) | Min. | Typ. | Max. | Unit |
| gfs | VDS = 10V, ID = 60A, Note 1 | Forward Transconductance | 70 | 120 | S | |
| RGi | Gate Input Resistance | 1.2 | ||||
| Ciss | VGS = 0V, VDS = 25V, f = 1MHz | Input Capacitance | 13.1 | nF | ||
| Coss | VGS = 0V, VDS = 25V, f = 1MHz | Output Capacitance | 2.0 | nF | ||
| Crss | VGS = 0V, VDS = 25V, f = 1MHz | Feedback Capacitance | 1.7 | pF | ||
| Co(er) | Effective Output Capacitance | 700 | pF | |||
| Co(tr) | Time related Capacitance | 2700 | pF | |||
| td(on) | VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25, RG = 5 (External) | Turn-on Delay Time | 40 | ns | ||
| tr | Rise Time | 32 | ns | |||
| td(off) | Turn-off Delay Time | 187 | ns | |||
| tf | Fall Time | 14 | ns | |||
| Qg(on) | VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25 | Total Gate Charge | 177 | nC | ||
| Qgs | VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25 | Gate-Source Charge | 63 | nC | ||
| Qgd | VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25 | Gate-Drain Charge | 49 | nC | ||
| RthJC | Thermal Resistance Junction-to-Case | 0.14 | C/W | |||
| RthCS | TO-247 | Thermal Resistance Case-to-Sink | 0.21 | C/W | ||
| RthCS | TO-264P | Thermal Resistance Case-to-Sink | 0.15 | C/W |
2411212321_Littelfuse-IXFK150N30X3_C6577947.pdf
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