High voltage LangJie LMBT5551 transistor with 556 C per watt thermal resistance and RoHS compliance
Key Attributes
Model Number:
LMBT5551
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
225mW
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
160V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LMBT5551
Package:
SOT-23
Product Description
High Voltage Transistors in SOT-23 Package
The LMBT5550LT1G and LMBT5551LT1G are high voltage transistors designed for various applications. They are RoHS compliant, indicating adherence to environmental standards.
Product Attributes
- Material Compliance: RoHS requirements
- Certifications: AEC-Q101 Qualified and PPAP Capable (for S- prefix devices)
Technical Specifications
| Device | Marking | Shipping | VCEO (Vdc) | VCBO (Vdc) | VEBO (Vdc) | IC (mAdc) | PD (mW @ TA=25C) | RJA (C/W) | TJ, Tstg (C) |
| LMBT5550LT1G | M1F | 3000/Tape&Reel | 140 | 160 | 6.0 | 600 | 225 (FR-5) | 556 (FR-5) | -55 to +150 |
| LMBT5551LT1G | G1 | 3000/Tape&Reel | 160 | 180 | 6.0 | 600 | 225 (FR-5) | 556 (FR-5) | -55 to +150 |
| LMBT5550LT3G | M1F | 10000/Tape&Reel | 140 | 160 | 6.0 | 600 | 225 (FR-5) | 556 (FR-5) | -55 to +150 |
| LMBT5551LT3G | G1 | 10000/Tape&Reel | 160 | 180 | 6.0 | 600 | 225 (FR-5) | 556 (FR-5) | -55 to +150 |
| Characteristic | Symbol | LMBT5550 Min | LMBT5550 Max | LMBT5551 Min | LMBT5551 Max | Unit |
| Collector - Emitter Breakdown Voltage (Note 3) | V(BR)CEO | 140 | - | 160 | - | Vdc |
| Collector - Base Breakdown Voltage | V(BR)CBO | 160 | - | 180 | - | Vdc |
| Emitter - Base Breakdown Voltage | V(BR)EBO | 6.0 | - | 6.0 | - | Vdc |
| Collector Cutoff Current (VCB = 100 Vdc, IE = 0) | ICBO | - | 100 | - | 50 | nAdc |
| Collector Cutoff Current (VCB = 100 Vdc, IE = 0, TA = 100C) | ICBO | - | 50 | - | 50 | nAdc |
| Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) | IEBO | - | 50 | - | 50 | nAdc |
| DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) | hFE | 60 | 250 | 80 | 250 | - |
| DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) | hFE | 60 | 250 | 80 | 250 | - |
| DC Current Gain (IC = 50 mAdc, VCE = 5.0 Vdc) | hFE | 20 | - | 30 | - | - |
| Collector - Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) | VCE(sat) | - | 0.15 | - | 0.15 | Vdc |
| Collector - Emitter Saturation Voltage (IC = 50 mAdc, IB = 5.0 mAdc) | VCE(sat) | - | 0.25 | - | 0.20 | Vdc |
| Base - Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) | VBE(sat) | - | 1.0 | - | 1.0 | Vdc |
| Base - Emitter Saturation Voltage (IC = 50 mAdc, IB = 5.0 mAdc) | VBE(sat) | - | 1.2 | - | 1.0 | Vdc |
| Collector Emitter Cut-off (VCB = 10 V) | ICES | - | 50 | - | 50 | nA |
| Collector Emitter Cut-off (VCB = 75 V) | ICES | - | 100 | - | 100 | nA |
2410121908_LangJie-LMBT5551_C18195377.pdf
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