1200V 150A IGBT Power Module Featuring Littelfuse MG12150W-XN2MM With Integrated Temperature Sensing
Key Attributes
Model Number:
MG12150W-XN2MM
Product Custom Attributes
Mfr. Part #:
MG12150W-XN2MM
Product Description
Product Overview
The MG12150W-XN2MM is a 1200V 150A IGBT Power Module from Littelfuse, Inc. It features a high level of integration with IGBT3 CHIP (Trench+Field Stop technology), offering low saturation voltage, positive temperature coefficient, fast switching, and short tail current. The module includes free-wheeling diodes with fast and soft reverse recovery, solderable pins for PCB mounting, and integrated temperature sensing. It is designed for applications such as AC motor control, motion/servo control, inverters, and power supplies.
Product Attributes
- Brand: Littelfuse, Inc.
- Certifications: RoHS
Technical Specifications
| Model | Parameter | Test Conditions | Min | Typ | Max | Unit |
| MG12150W-XN2MM | VCES (Collector - Emitter Voltage) | TJ=25C | 1200 | V | ||
| VGES (Gate - Emitter Voltage) | 20 | V | ||||
| IC (DC Collector Current) | TC=80C | 150 | A | |||
| ICM (Repetitive Peak Collector Current) | tp=1ms | 300 | A | |||
| Ptot (Power Dissipation Per IGBT) | 625 | W | ||||
| VRRM (Repetitive Reverse Voltage) | TJ=25C | 1200 | V | |||
| IF(AV) (Average Forward Current) | TC=80C | 150 | A | |||
| IFRM (Repetitive Peak Forward Current) | tp=1ms | 300 | A | |||
| I2t | TJ =125C, t=10ms, VR=0V | 4350 | A2s | |||
| TJ max (Max. Junction Temperature) | 150 | C | ||||
| TJ op (Operating Temperature) | -40 | 125 | C | |||
| Tstg (Storage Temperature) | -40 | 125 | C | |||
| Visol (Insulation Test Voltage) | AC, t=1min | 3000 | V | |||
| CTI (Comparative Tracking Index) | 250 | |||||
| MG12150W-XN2MM | VGE(th) (Gate - Emitter Threshold Voltage) | VCE=VGE, IC=6.0mA | 5.0 | 5.8 | 6.5 | V |
| VCE(sat) (Collector - Emitter Saturation Voltage) | IC=150A, VGE=15V, TJ=25C | 1.7 | V | |||
| VCE(sat) (Collector - Emitter Saturation Voltage) | IC=150A, VGE=15V, TJ=125C | 1.9 | V | |||
| IICES (Collector Leakage Current) | VCE=1200V, VGE=0V, TJ=25C | 1 | mA | |||
| IICES (Collector Leakage Current) | VCE=1200V, VGE=0V, TJ=125C | 10 | mA | |||
| IGES (Gate Leakage Current) | VCE=0V, VGE=15V, TJ=125C | -400 | 400 | nA | ||
| RGint (Integrated Gate Resistor) | 5.0 | |||||
| Qge (Gate Charge) | VCE=600V, IC=150A , VGE=15V | 1.4 | C | |||
| Cies (Input Capacitance) | VCE=25V, VGE=0V, f =1MHz | 10.5 | nF | |||
| Cres (Reverse Transfer Capacitance) | 0.4 | nF | ||||
| td(on) (Turn - on Delay Time) | VCC=600V IC=150A RG =2.4 VGE=15V Inductive Load, TJ=25C | 260 | ns | |||
| tr (Rise Time) | Inductive Load, TJ=25C | 30 | ns | |||
| td(off) (Turn - off Delay Time) | Inductive Load, TJ=25C | 420 | ns | |||
| tf (Fall Time) | Inductive Load, TJ=25C | 70 | ns | |||
| Eon (Turn - on Energy) | Inductive Load, TJ=25C | 12 | mJ | |||
| Eoff (Turn - off Energy) | Inductive Load, TJ=25C | 11 | mJ | |||
| MG12150W-XN2MM | ISC (Short Circuit Current) | tpsc10S , VGE=15V; TJ=125C , VCC=900V | 600 | A | ||
| RthJC (Junction-to-Case Thermal Resistance) | Per IGBT | 0.20 | K/W | |||
| VF (Forward Voltage) | IF=150A, VGE=0V, TJ =25C | 1.65 | V | |||
| tRR (Reverse Recovery Time) | IF=150A, VR=600V diF/dt=3600A/s TJ=125C | 350 | ns | |||
| IRRM (Max. Reverse Recovery Current) | 160 | A | ||||
| Erec (Reverse Recovery Energy) | 13.5 | mJ | ||||
| MG12150W-XN2MM | RthJCD (Junction-to-Case Thermal Resistance) | Per Diode | 0.36 | K/W | ||
| R25 (Resistance) | Tc=25C | 5 | K | |||
| MG12150W-XN2MM | B25/50 | 3375 | K |
2411011005_Littelfuse-MG12150W-XN2MM_C6300695.pdf
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