IGBT Logic Level Switching Device Littelfuse NGB18N40ACLBT4G with ESD and Over Voltage Protection
Key Attributes
Model Number:
NGB18N40ACLBT4G
Product Custom Attributes
Mfr. Part #:
NGB18N40ACLBT4G
Package:
D2PAK
Product Description
Product Overview
The NGB18N40ACLB is a Logic Level Insulated Gate Bipolar Transistor (IGBT) designed for ignition and high-voltage/high-current switching applications. It features monolithic circuitry with integrated ESD and Over-Voltage clamped protection, making it ideal for coil-on-plug systems, direct fuel injection, and similar demanding scenarios. The DPAK package offers a smaller footprint, and the device includes features like gate-emitter ESD protection, temperature-compensated gate-collector voltage clamp, and emitter ballasting for short-circuit capability.
Product Attributes
- Brand: Littelfuse
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: PbFree Devices
Technical Specifications
| Rating | Symbol | Value | Unit | Test Conditions | Temperature | Min | Typ | Max |
| CollectorEmitter Voltage | VCES | 430 | VDC | |||||
| CollectorGate Voltage | VCER | 430 | VDC | |||||
| GateEmitter Voltage | VGE | 18 | VDC | |||||
| Collector CurrentContinuous @ TC = 25C | IC | 18 | ADC | TC = 25C | ||||
| Collector CurrentPulsed | IC | 50 | AAC | |||||
| ESD (Human Body Model) | ESD | 8.0 | kV | R = 1500 , C = 100 pF | ||||
| ESD (Machine Model) | ESD | 800 | V | R = 0 , C = 200 pF | ||||
| Total Power Dissipation @ TC = 25C | PD | 115 | Watts | TC = 25C | ||||
| Derate above 25C | 0.77 | W/C | above 25C | |||||
| Operating and Storage Temperature Range | TJ, Tstg | 55 to +175 | C | |||||
| CollectorEmitter Clamp Voltage | BVCES | 380-430 | VDC | IC = 2.0 mA | TJ = 40C to 150C | 380 | 395 | 420 |
| CollectorEmitter Clamp Voltage | BVCES | 390-430 | VDC | IC = 10 mA | TJ = 40C to 150C | 390 | 405 | 430 |
| Zero Gate Voltage Collector Current | ICES | 2.0-40* | A | VCE = 350 V, VGE = 0 V | TJ = 25C | 2.0 | 20 | |
| Zero Gate Voltage Collector Current | ICES | 10-40* | A | VCE = 350 V, VGE = 0 V | TJ = 150C | 10 | 40* | |
| Zero Gate Voltage Collector Current | ICES | -1.0-10 | A | VCE = 350 V, VGE = 0 V | TJ = 40C | -1.0 | 10 | |
| Reverse CollectorEmitter Leakage Current | IECS | 0.7-25* | mA | VCE = 24 V | TJ = 25C | 0.7 | 2.0 | |
| Reverse CollectorEmitter Leakage Current | IECS | -12-25* | mA | VCE = 24 V | TJ = 150C | -12 | 25* | |
| Reverse CollectorEmitter Leakage Current | IECS | -0.1-1.0 | mA | VCE = 24 V | TJ = 40C | -0.1 | 1.0 | |
| Reverse CollectorEmitter Clamp Voltage | BVCES(R) | 27-40 | VDC | IC = 75 mA | TJ = 25C | 27 | 33 | 37 |
| Reverse CollectorEmitter Clamp Voltage | BVCES(R) | 30-40 | VDC | IC = 75 mA | TJ = 150C | 30 | 36 | 40 |
| Reverse CollectorEmitter Clamp Voltage | BVCES(R) | 25-35 | VDC | IC = 75 mA | TJ = 40C | 25 | 32 | 35 |
| GateEmitter Clamp Voltage | BVGES | 11-15 | VDC | IG = 5.0 mA | TJ = 40C to 150C | 11 | 13 | 15 |
| GateEmitter Leakage Current | IGES | 384-1000 | ADC | VGE = 10 V | TJ = 40C to 150C | 384 | 640 | 1000 |
| Gate Emitter Resistor | RGE | 10-26 | k | TJ = 40C to 150C | 10 | 16 | 26 | |
| CollectortoEmitter OnVoltage | VCE(on) | 1.0-1.65 | VDC | IC = 6.0 A, VGE = 4.0 V | TJ = 25C | 1.0 | 1.4 | 1.6 |
| CollectortoEmitter OnVoltage | VCE(on) | 0.9-1.6 | VDC | IC = 6.0 A, VGE = 4.0 V | TJ = 150C | 0.9 | 1.3 | 1.6 |
| CollectortoEmitter OnVoltage | VCE(on) | 1.1-1.7* | VDC | IC = 6.0 A, VGE = 4.0 V | TJ = 40C | 1.1 | 1.45 | 1.7* |
| CollectortoEmitter OnVoltage | VCE(on) | 1.3-1.9* | VDC | IC = 8.0 A, VGE = 4.0 V | TJ = 25C | 1.3 | 1.6 | 1.9* |
| CollectortoEmitter OnVoltage | VCE(on) | 1.2-1.8 | VDC | IC = 8.0 A, VGE = 4.0 V | TJ = 150C | 1.2 | 1.55 | 1.8 |
| CollectortoEmitter OnVoltage | VCE(on) | 1.4-1.9* | VDC | IC = 8.0 A, VGE = 4.0 V | TJ = 40C | 1.4 | 1.6 | 1.9* |
| CollectortoEmitter OnVoltage | VCE(on) | 1.4-2.05 | VDC | IC = 10 A, VGE = 4.0 V | TJ = 25C | 1.4 | 1.8 | 2.05 |
| CollectortoEmitter OnVoltage | VCE(on) | 1.5-2.0 | VDC | IC = 10 A, VGE = 4.0 V | TJ = 150C | 1.5 | 1.8 | 2.0 |
| CollectortoEmitter OnVoltage | VCE(on) | 1.4-2.1* | VDC | IC = 10 A, VGE = 4.0 V | TJ = 40C | 1.4 | 1.8 | 2.1* |
| CollectortoEmitter OnVoltage | VCE(on) | 1.6-2.2 | VDC | IC = 15 A, VGE = 4.0 V | TJ = 25C | 1.6 | 1.9 | 2.2 |
| CollectortoEmitter OnVoltage | VCE(on) | 1.7-2.3 | VDC | IC = 15 A, VGE = 4.0 V | TJ = 150C | 1.7 | 2.1 | 2.3 |
| CollectortoEmitter OnVoltage | VCE(on) | 1.6-2.2 | VDC | IC = 15 A, VGE = 4.0 V | TJ = 40C | 1.6 | 1.8 | 2.2 |
| CollectortoEmitter OnVoltage | VCE(on) | 1.3-2.0* | VDC | IC = 10 A, VGE = 4.5 V | TJ = 25C | 1.3 | 1.8 | 2.0* |
| CollectortoEmitter OnVoltage | VCE(on) | 1.3-2.0* | VDC | IC = 10 A, VGE = 4.5 V | TJ = 150C | 1.3 | 1.75 | 2.0* |
| CollectortoEmitter OnVoltage | VCE(on) | 1.4-2.0* | VDC | IC = 10 A, VGE = 4.5 V | TJ = 40C | 1.4 | 1.8 | 2.0* |
| CollectortoEmitter OnVoltage | VCE(on) | _-_1.65 | VDC | IC = 6.5 A, VGE = 3.7 V | TJ = 25C | 1.65 | ||
| Forward Transconductance | gfs | 8.0-25 | Mhos | VCE = 5.0 V, IC = 6.0 A | TJ = 40C to 150C | 8.0 | 14 | 25 |
| Input Capacitance | CISS | 400-1000 | pF | VCC = 25 V, VGE = 0 V | TJ = 40C to 150C | 400 | 800 | 1000 |
| Output Capacitance | COSS | 50-100 | pF | 50 | 75 | 100 | ||
| Transfer Capacitance | CRSS | 4.0-10 | pF | 4.0 | 7.0 | 10 | ||
| TurnOff Delay Time (Resistive) | td(off) | 4.0-10 | S | VCC = 300 V, IC = 6.5 A RG = 1.0 k, RL = 46 | TJ = 25C | 4.0 | 10 | |
| Fall Time (Resistive) | tf | 9.0-15 | S | VCC = 300 V, IC = 6.5 A RG = 1.0 k, RL = 46 | TJ = 25C | 9.0 | 15 | |
| TurnOn Delay Time | td(on) | 0.7-4.0 | S | VCC = 10 V, IC = 6.5 A RG = 1.0 k, RL = 1.5 | TJ = 25C | 0.7 | 4.0 | |
| Rise Time | tr | 4.5-7.0 | S | VCC = 10 V, IC = 6.5 A RG = 1.0 k, RL = 1.5 | TJ = 25C | 4.5 | 7.0 | |
| Short Circuit Withstand Time 1 | tsc1 | 750 | s | 3 Pulses with 10 ms Period | (55 TJ 150C) | 750 | ||
| Short Circuit Withstand Time 2 | tsc2 | 5.0 | ms | 3 Pulses with 10 ms Period | (55 TJ 150C) | 5.0 | ||
| Thermal Resistance, Junction to Case | RJC | 1.3 | C/W | 1.3 | ||||
| Thermal Resistance, Junction to Ambient D2PAK (Note 1) | RJA | 50 | C/W | Mounted on an FR4 board | 50 | |||
| Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds | TL | 275 | C | 275 | ||||
| Single Pulse CollectortoEmitter Avalanche Energy | EAS | 400 | mJ | VCC = 50 V, VGE = 5.0 V, Pk IL = 21.1 A, L = 1.8 mH | Starting TJ = 25C | 400 | ||
| Single Pulse CollectortoEmitter Avalanche Energy | EAS | 300 | mJ | VCC = 50 V, VGE = 5.0 V, Pk IL = 18.3 A, L = 1.8 mH | Starting TJ = 125C | 300 | ||
| Reverse Avalanche Energy | EAS (R) | 2000 | mJ | VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH | Starting TJ = 25C | 2000 |
2411192346_Littelfuse-NGB18N40ACLBT4G_C5802412.pdf
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