High stability N Channel MOSFET Leiditech STL45N10F7AG ideal for inverter and switching applications
Key Attributes
Model Number:
STL45N10F7AG
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+150℃
RDS(on):
26mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
4.1pF
Output Capacitance(Coss):
194.6pF
Input Capacitance(Ciss):
1.1906nF
Pd - Power Dissipation:
72W
Gate Charge(Qg):
19.8nC@10V
Mfr. Part #:
STL45N10F7AG
Package:
DFN5x6-8L
Product Description
Product Overview
This N-Channel MOSFET utilizes advanced SGT technology, offering low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. It is specifically designed for enhanced ruggedness and suitability in various inverter and synchronous-rectification applications. Key advantages include extremely low switching loss and excellent stability and uniformity.
Product Attributes
- Brand: Leiditech
- Technology: SGT MOSFET
- Channel Type: N-Channel
Technical Specifications
| Product ID | Pack Marking | Qty(PCS) | |
| STL45N10F7AG | STL45N10F7AG | 5000 | |
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit | Notes |
| Drain source voltage | VDS | 100 | V | |
| Gate source voltage | VGS | 20 | V | |
| Continuous drain current1) | ID | 40 | A | TC=25 |
| Pulsed drain current2) | ID, pulse | 120 | A | TC=25 |
| Power dissipation3) | PD | 72 | W | TC=25 |
| Single pulsed avalanche energy5) | EAS | 30 | mJ | |
| Operation and storage temperature | TstgTj | -55 to 150 | ||
| Thermal resistance, junction-case | RJC | 1.74 | /W | |
| Thermal resistance, junction-ambient4) | RJA | 62 | /W |
Electrical Characteristics
| Parameter | Symbol | Test condition | Min. | Typ. | Max. | Unit |
| Drain-source breakdown voltage | BVDSS | VGS=0 V, ID=250 A | 100 | V | ||
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=250 A | 1.0 | 2.5 | V | |
| Drain-source on-state resistance | RDS(ON) | VGS=10 V, ID=8 A | 16 | 20 | m | |
| Drain-source on-state resistance | RDS(ON) | VGS=4.5 V, ID=6 A | 26 | m | ||
| Gate-source leakage current | IGSS | VGS=20 V | 100 | nA | ||
| Drain-source leakage current | IDSS | VDS=100 V, VGS=0 V | 1 | A | ||
| Input capacitance | Ciss | VGS=0 V, VDS=50 V, =1 MHz | 1190.6 | pF | ||
| Output capacitance | Coss | VGS=0 V, VDS=50 V, =1 MHz | 194.6 | pF | ||
| Reverse transfer capacitance | Crss | VGS=0 V, VDS=50 V, =1 MHz | 4.1 | pF | ||
| Turn-on delay time | td(on) | VGS=10 V, VDS=50 V, RG=2.2 , ID=10 A | 17.8 | ns | ||
| Rise time | tr | VGS=10 V, VDS=50 V, RG=2.2 , ID=10 A | 3.9 | ns | ||
| Turn-off delay time | td(off) | VGS=10 V, VDS=50 V, RG=2.2 , ID=10 A | 33.5 | ns | ||
| Fall time | tf | VGS=10 V, VDS=50 V, RG=2.2 , ID=10 A | 3.2 | ns | ||
| Total gate charge | Qg | ID=8 A, VDS=50 V, VGS=10 V | 19.8 | nC | ||
| Gate-source charge | Qgs | ID=8 A, VDS=50 V, VGS=10 V | 2.4 | nC | ||
| Gate-drain charge | Qg d | ID=8 A, VDS=50 V, VGS=10 V | 5.3 | nC | ||
| Gate plateau voltage | Vplateau | ID=8 A, VDS=50 V, VGS=10 V | 3.2 | V | ||
| Diode forward current | IS | VGS<Vth | 40 | A | ||
| Pulsed source current | ISP | 120 | A | |||
| Diode forward voltage | VSD | IS=8 A, VGS=0 V | 1.3 | V | ||
| Reverse recovery time | trr | IS=8 A, di/dt=100 A/s | 50.2 | ns | ||
| Reverse recovery charge | Qrr | IS=8 A, di/dt=100 A/s | 95.1 | nC | ||
| Peak reverse recovery current | Irrm | IS=8 A, di/dt=100 A/s | 2.5 | A |
Package Mechanical Data-DFN5*6-8L-JQ
| Symbol | Description | Min | Max | Inch Min | Inch Max |
| A | 1.03 | 1.17 | 0.0406 | 0.0461 | |
| b | 0.34 | 0.48 | 0.0134 | 0.0189 | |
| c | 0.824 | 0.0970 | 0.0324 | 0.082 | |
| D | 4.80 | 5.40 | 0.1890 | 0.2126 | |
| D1 | 4.11 | 4.31 | 0.1618 | 0.1697 | |
| D2 | 4.80 | 5.00 | 0.1890 | 0.1969 | |
| E | 5.95 | 6.15 | 0.2343 | 0.2421 | |
| E1 | 5.65 | 5.85 | 0.2224 | 0.2303 | |
| E2 | 1.60 | / | 0.0630 | / | |
| e | BSC | 1.27 | 0.05 | BSC | |
| L | 0.05 | 0.25 | 0.0020 | 0.0098 | |
| L1 | 0.38 | 0.50 | 0.0150 | 0.0197 | |
| L2 | 0.38 | 0.50 | 0.0150 | 0.0197 | |
| H | 3.30 | 3.50 | 0.1299 | 0.1378 | |
| I | / | 0.18 | / | 0.0070 |
Applications
- Consumer electronic power supply
- Motor control
- Synchronous-rectification
- Isolated DC-DC converters
Notes
- Calculated continuous current based on maximum allowable junction temperature.
- Repetitive rating; pulse width limited by max. junction temperature.
- Pd is based on max. junction temperature, using junction-case thermal resistance.
- The value of RJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 .
- VDD=50 V, RG=25 , L=0.3 mH, starting Tj=25 .
2409292333_Leiditech-STL45N10F7AG_C3647069.pdf
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