High Static dv dt Sensitive SCR Littelfuse S6X8TSRP with Direct Microprocessor Interfacing Capability

Key Attributes
Model Number: S6X8TSRP
Product Custom Attributes
Holding Current (Ih):
5mA
Current - Gate Trigger(Igt):
5uA
Voltage - On State(Vtm):
1.7V
Average Gate Power Dissipation (PG(AV)):
100mW
Current - On State(It(RMS)):
800mA
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
8A@50Hz
SCR Type:
-
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
800mV
Mfr. Part #:
S6X8TSRP
Package:
SOT-223
Product Description

Product Overview

The SxX8xSx EV series sensitive SCRs are designed for high static dv/dt and low turn-off time (tq), making them ideal for Ground Fault Circuit Interrupter (GFCI) and Gas Ignition applications. These SCRs feature glass-passivated junctions for long-term reliability and parametric stability, offering surge capability up to 10 A and blocking voltages up to 800 V. Their sensitive gate allows for direct microprocessor interfacing.

Product Attributes

  • Brand: Littelfuse
  • Series: SxX8xSx EV Series
  • Certifications: RoHS compliant and Halogen-Free

Technical Specifications

CharacteristicValueUnitConditionsSxX8yS1SxX8yS2SxX8yS3
RMS On-state Current (IT(RMS))0.8ATO-92, TC = 55 C
Average On-state Current (IT(AV))0.51ATO-92, TC = 55 C
Non-repetitive Surge Peak On-state Current (ITSM)8 to 10ASingle Cycle, TJ,Initial = 25 C, f = 50/60 Hz
I2t Value for Fusing0.32 to 0.41A2stp = 10 ms / 8.3 ms, f = 50/60 Hz
Critical Rate of Rise of On-state Current (di/dt)50A/sIG =10 mA, TJ = 125 C
Peak Gate Current (IGM)1.0Atp = 10 s, TJ = 125 C
Average Gate Power Dissipation (PG(AV))0.1WTJ = 125 C
Storage Junction Temperature Range (TSTG)-40 to 150C
Operating Junction Temperature Range (TJ)-40 to 125C
Thermal Resistance, junction-to-case (Rth(JC))30 to 75C/WAC, IT = 0.8 A(RMS)75 (TO-92)50 (SOT-89)30 (SOT-223)
Thermal Resistance, junction-to-ambient (Rth(JA))60 to 150C/WIT = 0.8 A(RMS)150 (TO-92)90 (SOT-89)60 (SOT-223)
DC Gate Trigger Current (IGT)5 to 200AVD = 6 V, RL = 10, TJ = 25 C0.5-51-5015-200
DC Gate Trigger Voltage (VGT)0.8VVD = 6 V, RL = 10, TJ = 25 C
Peak Reverse Gate Voltage (VGRM)5VIRG = 10 A
Holding Current (IH)5mARGK, Initial current = 20 A, TJ = 25 C
Critical Rate-of-rise of Off-stage Voltage ((dv/dt)s)75V/sTJ = 125 C, VD =VDRM/VRRM, RGK
Turn-off Time (tq)25 to 30sTJ = 25 C @ 600 V, RGK302525
Turn-on Time (tgt)2sIG = 10 mA, PW T = 1.6 APK
Gate Non-trigger Voltage (VGD)0.2VVD = VDRM, RGK = 1 J = 125 C
Peak On-state Voltage (VTM)1.70VITM = 1.6 Apk
Off-state Current, Peak Repetitive (IDRM)3 to 500ATJ = 25 C / 125 C, VD = VDRM, RGK3 (25C) / 500 (125C)3 (25C) / 500 (125C)3 (25C) / 500 (125C)

2410121714_Littelfuse-S6X8TSRP_C2936132.pdf

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