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quality Compact SOT 23 package Leiditech IRLML6406 20V N Channel MOSFET designed for switching and fast charging factory
quality Compact SOT 23 package Leiditech IRLML6406 20V N Channel MOSFET designed for switching and fast charging factory

Compact SOT 23 package Leiditech IRLML6406 20V N Channel MOSFET designed for switching and fast charging

Key Attributes
Model Number: IRLML6406
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6.8A
RDS(on):
21mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
80pF@10V
Number:
-
Input Capacitance(Ciss):
780pF@10V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
11nC@4.5V
Mfr. Part #:
IRLML6406
Package:
SOT-23
Product Description

Product Overview

The IRLML6406 is a 20V N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It is designed to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V. This MOSFET is suitable for battery protection and other switching applications, including wireless impact and mobile phone fast charging. Its key advantages include low gate charge and efficient operation.

Product Attributes

  • Brand: Leiditech
  • Model: IRLML6406
  • Technology: Advanced Trench Technology
  • Package Type: SOT-23

Technical Specifications

Symbol Parameter Conditions Min Typ Max Units
VDS Drain-Source Voltage 20 V
VGS Gate-Source Voltage 20 V
ID@TA=25 Continuous Drain Current 6.8 A
ID@TA=70 Continuous Drain Current 6.0 A
IDM Pulsed Drain Current 30 A
PD@TA=25 Total Power Dissipation 1.5 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
RJA Thermal Resistance Junction-ambient 1 83 /W
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250A 20 22 V
VGS(th) Gate Threshold Voltage VDS= VGS, ID=250A 0.50 0.65 1.0 V
RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=4A 16 21 m
RDS(ON) Static Drain-Source On-Resistance VGS=2.5V, ID=3A 20 30 m
IDSS Zero Gate Voltage Drain Current VDS=20V,VGS=0V 1 A
IGSS Gate-Body Leakage Current VGS=10V, VDS=0V 100 nA
Ciss Input Capacitance VDS=10V,VGS=0V,f=1MHZ 780 pF
Coss Output Capacitance VDS=10V,VGS=0V,f=1MHZ 140 pF
Crss Reverse Transfer Capacitance VDS=10V,VGS=0V,f=1MHZ 80 pF
Qg Total Gate Charge VGS=4.5V,VDS=10V,ID=6.8A 11 nC
Qgs Gate-Source Charge VGS=4.5V,VDS=10V,ID=6.8A 2.3 nC
Qgd Gate-Drain Charge VGS=4.5V,VDS=10V,ID=6.8A 2.9 nC
tD(on) Turn-on Delay Time VGS=4.5V, VDS=10V, ID=6.8A RGEN=3 9 ns
tr Turn-on Rise Time VGS=4.5V, VDS=10V, ID=6.8A RGEN=3 30 ns
tD(off) Turn-off Delay Time VGS=4.5V, VDS=10V, ID=6.8A RGEN=3 35 ns
tf Turn-off fall Time VGS=4.5V, VDS=10V, ID=6.8A RGEN=3 10 ns
VSD Diode Forward Voltage IS=6.8A,VGS=0V 1.2 V
Device Marking Device Package Reel Size Tape width Quantity
IRLML6406 IRLML6406 SOT-23 180mm 8 mm 3000 units
Symbol Dimensions in Millimeters MIN. MAX.
A 0.900 1.150
A1 0.000 0.100
A2 0.900 1.050
b 0.300 0.500
c 0.080 0.150
D 2.800 3.000
E 1.200 1.400
E1 2.250 2.550
e 0.950TYP
e1 1.800 2.000
L 0.550REF
L1 0.300 0.500
0 8

2410121514_Leiditech-IRLML6406_C3647037.pdf

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