SOT 23 Package P Channel MOSFET Leiditech LM2301C Featuring Low Gate Voltage Operation and Load Switching

Key Attributes
Model Number: LM2301C
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.3A
RDS(on):
185mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
34pF
Number:
1 P-Channel
Output Capacitance(Coss):
60pF
Input Capacitance(Ciss):
290pF@10V
Pd - Power Dissipation:
700mW
Gate Charge(Qg):
3nC@4.5V
Mfr. Part #:
LM2301C
Package:
SOT-23
Product Description

Product Overview

The LM2301C is a P-Channel Enhancement Mode MOSFET designed with advanced trench technology, offering excellent RDS(ON) and low gate charge. It is capable of operating with gate voltages as low as 2.5V, making it suitable for battery protection, load switching, and uninterruptible power supply applications. Its key features include a VDS of -20V and a continuous drain current (ID) of -2.3A.

Product Attributes

  • Brand: Leiditech
  • Model: LM2301C
  • Package Type: SOT-23

Technical Specifications

Parameter Condition Min Typ Max Unit
VDS (Drain-Source Voltage) -20 V
ID (Drain Current-Continuous) -2.3 A
RDS(ON) VGS=-4.5V, ID=-2A 135 165 m
RDS(ON) VGS=-2.5V, ID=-1.8A 150 185 m
VGS(th) (Gate Threshold Voltage) VDS=VGS, ID=-250A -0.5 -0.7 -1.2 V
BVDSS (Drain-Source Breakdown Voltage) VGS=0V, ID=-250A -20 V
IDSS (Zero Gate Voltage Drain Current) VDS=-20V, VGS=0V -1 A
IGSS (Gate-Body Leakage Current) VGS=12V, VDS=0V 100 nA
PD (Maximum Power Dissipation) (TC=25) 0.7 W
TJ,TSTG (Operating Junction and Storage Temperature Range) -55 150
RJA (Thermal Resistance, Junction-to-Ambient) (Note 2) 178 /W
Package SOT-23
Reel Size 180mm
Tape Width 8 mm
Quantity 3000 units
Device Marking A1SHB

2410121932_Leiditech-LM2301C_C3647027.pdf
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