SCR component Littelfuse S4X8BSRP featuring sensitive gate and glass passivated junctions for operation
Key Attributes
Model Number:
S4X8BSRP
Product Custom Attributes
Holding Current (Ih):
5mA
Current - Gate Trigger(Igt):
200uA
Voltage - On State(Vtm):
1.7V
Current - On State(It(RMS)):
800mA
Peak Off - State Voltage(Vdrm):
400V
SCR Type:
-
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
800mV
Mfr. Part #:
S4X8BSRP
Package:
SOT-89-3
Product Description
Product Overview
The EV Series 0.8 Amp Sensitive SCRs are designed for GFCI (Ground Fault Circuit Interrupter) and Gas Ignition applications. These SCRs feature a small die planar construction, high static dv/dt, and lower turn-off time (tq). All junctions are glass-passivated for long-term reliability and parametric stability. They offer a sensitive gate for direct microprocessor interface and are available in thru-hole and surface mount packages.
Product Attributes
- Brand: Littelfuse
- Series: EV Series
- Certifications: RoHS compliant, Halogen-Free
- Material: UL recognized epoxy meeting flammability rating 94V-0
- Terminal Finish: 100% Matte Tin-plated
- Lead Material: Copper Alloy
Technical Specifications
| Parameter | TO-92 | SOT-89 | SOT-223 | Unit |
| RMS on-state current (IT(RMS)) TC = 55C / TC = 60C / TL = 60C | 0.8 | 0.8 | 0.8 | A |
| Average on-state current (IT(AV)) TC = 55C / TC = 60C / TL = 60C | 0.51 | 0.51 | 0.51 | A |
| Non repetitive surge peak on-state current (ITSM) F= 50Hz | 8 | 8 | 8 | A |
| Non repetitive surge peak on-state current (ITSM) F= 60Hz | 10 | 10 | 10 | A |
| I2t Value for fusing tp = 10 ms F = 50 Hz | 0.32 | 0.32 | 0.32 | A2s |
| I2t Value for fusing tp = 8.3 ms F = 60 Hz | 0.41 | 0.41 | 0.41 | A2s |
| Critical rate of rise of on-state current (di/dt) IG = 10mA TJ = 125C | 50 | 50 | 50 | A/s |
| Peak Gate Current (IGM) tp = 10 s TJ = 125C | 1.0 | 1.0 | 1.0 | A |
| Average Gate Power Dissipation (PG(AV)) TJ = 125C | 0.1 | 0.1 | 0.1 | W |
| Storage Junction Temperature Range (Tstg) | -40 to 150 | -40 to 150 | -40 to 150 | C |
| Operating Junction Temperature Range (TJ) | -40 to 125 | -40 to 125 | -40 to 125 | C |
| DC Gate Trigger Current (IGT) VD = 6V RL = 100 (SxX8yS1) | MIN. 0.5, MAX. 5 | MIN. 1, MAX. 50 | MIN. 15, MAX. 200 | A |
| DC Gate Trigger Voltage (VGT) VD = 6V RL = 100 | MAX. 0.8 | MAX. 0.8 | MAX. 0.8 | V |
| Peak Reverse Gate Voltage (VGRM) IRG = 10A | MIN. 5 | MIN. 5 | MIN. 5 | V |
| Holding Current (IH) RGK = 1 K Initial Current = 20mA | MAX. 5 | MAX. 5 | MAX. 5 | mA |
| Critical Rate-of-Rise of Off-State Voltage ((dv/dt)s) TJ = 125C VD = VDRM /VRRM Exp. Waveform RGK =1 k | MIN. 75 | MIN. 75 | MIN. 75 | V/s |
| Gate Non-Trigger Voltage (VGD) VD = VDRM RGK =1 k TJ = 25C | MIN. 0.2 | MIN. 0.2 | MIN. 0.2 | V |
| Turn-Off Time (tq) TJ = 25C @ 600 V RGK =1 k | MAX. 30 | MAX. 25 | MAX. 25 | s |
| Turn-On Time (tgt) IG=10mA PW = 15sec IT = 1.6A(pk) | TYP. 2.0 | TYP. 2.0 | TYP. 2.0 | s |
| Peak On-State Voltage (VTM) ITM = 1.6A (pk) | MAX. 1.70 | MAX. 1.70 | MAX. 1.70 | V |
| Off-State Current, Peak Repetitive (IDRM) TJ = 25C @ VD = VDRM RGK =1 k | MAX. 3 | MAX. 3 | MAX. 3 | A |
| Off-State Current, Peak Repetitive (IDRM) TJ = 125C @ VD = VDRM RGK =1 k | MAX. 500 | MAX. 500 | MAX. 500 | A |
| Junction to Case Thermal Resistance (Rth(j-c)) IT = 0.8A (RMS) | 75 | 50 | 30 | C/W |
| Junction to Ambient Thermal Resistance (Rth(j-a)) IT = 0.8A (RMS) | 150 | 90 | 60 | C/W |
2411272231_Littelfuse-S4X8BSRP_C207241.pdf
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