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quality Leiditech LM L2N7002LT1G Featuring Trench Power MV MOSFET Technology and Low Input Output Leakage factory
quality Leiditech LM L2N7002LT1G Featuring Trench Power MV MOSFET Technology and Low Input Output Leakage factory

Leiditech LM L2N7002LT1G Featuring Trench Power MV MOSFET Technology and Low Input Output Leakage

Key Attributes
Model Number: LM-L2N7002LT1G
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
340mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
3Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
5.5pF@30V
Number:
1 N-channel
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
16pF@30V
Gate Charge(Qg):
2.4nC@10V
Mfr. Part #:
LM-L2N7002LT1G
Package:
SOT-23
Product Description

Product Overview

The LM-L2N7002LT1G is an N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power MV MOSFET technology. Designed as a voltage-controlled small signal switch, it offers low input capacitance, fast switching speed, and low input/output leakage. This device is ideal for battery-operated systems, solid-state relays, and applications requiring direct logic-level interface with TTL/CMOS.

Product Attributes

  • Brand: Leiditech
  • Product Type: N-Channel Enhancement Mode Field Effect Transistor
  • Technology: Trench Power MV MOSFET
  • Control Type: Voltage-controlled
  • Interface: Direct logic-level interface (TTL/CMOS)

Technical Specifications

Parameter Symbol Conditions Limit Unit
Product Summary
Drain-source Voltage VDS 60 V
Drain Current ID 340 mA
RDS(ON) VGS=10V <2.5 ohm
RDS(ON) VGS=4.5V <3.0 ohm
Absolute Maximum Ratings (TA=25 unless otherwise noted)
Drain-source Voltage VDS 60 V
Gate-source Voltage VGS 20 V
Drain Current @ Steady State (TA=25) ID TA=25 @ Steady State 340 mA
Drain Current @ Steady State (TA=70) ID TA=70 @ Steady State 272 mA
Pulsed Drain Current IDM 1.5 A
Total Power Dissipation @ TA=25 PD @ TA=25 350 mW
Thermal Resistance Junction-to-Ambient @ Steady State RJA @ Steady State 357 / W
Junction and Storage Temperature Range TJ ,TSTG -55+150
Electrical Characteristics (TJ=25 unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250A 60 V
Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V 1 A
Gate-Body Leakage Current IGSS1 VGS= 20V, VDS=0V 100 nA
Gate-Body Leakage Current IGSS2 VGS= 10V, VDS=0V 50 nA
Gate Threshold Voltage VGS(th) VDS= VGS, ID=250A 1 V
Gate Threshold Voltage VGS(th) VDS= VGS, ID=250A 1.5 V
Gate Threshold Voltage VGS(th) VDS= VGS, ID=250A 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS= 10V, ID=-300mA 1.2
Static Drain-Source On-Resistance RDS(ON) VGS= 10V, ID=-300mA 2.5
Static Drain-Source On-Resistance RDS(ON) VGS= 4.5V, ID=200mA 1.3
Static Drain-Source On-Resistance RDS(ON) VGS= 4.5V, ID=200mA 3.0
Diode Forward Voltage VSD IS=300mA,VGS=0V 1.2 V
Maximum Body-Diode Continuous Current IS 340 mA
Dynamic Parameters
Input Capacitance Ciss VDS=30V,VGS=0V,f=1MHZ 16 pF
Output Capacitance Coss VDS=30V,VGS=0V,f=1MHZ 16 pF
Reverse Transfer Capacitance Crss VDS=30V,VGS=0V,f=1MHZ 5.5 pF
Switching Parameters
Total Gate Charge Qg VGS=10V,VDS=30V,ID=0.3A 1.7 nC
Total Gate Charge Qg VGS=10V,VDS=30V,ID=0.3A 2.4 nC
Turn-on Delay Time tD(on) VGS=10V,VDD=30V, ID=300mA, RGEN=6 5 ns
Turn-off Delay Time tD(off) VGS=10V,VDD=30V, ID=300mA, RGEN=6 17 ns
Reverse recovery Time trr VGS=0V,IS=300mA,VR=25V, dIS/dt=- 100A/s 30 ns
Ordering Information
Preferred P/N LM-L2N7002LT1G
Packing Code LM-L2N7002LT1G
Marking F2 7002
Minimum Package (pcs) 3000
Inner Box Quantity (pcs) 30000
Outer Carton Quantity (pcs) 120000
Delivery Mode 7" reel

Note: A. Pulse Test: Pulse Width300us, Duty cycle 2%. B. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.


2409272300_Leiditech-LM-L2N7002LT1G_C5353604.pdf

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