P Channel MOSFET Lewa Micro LWS6004A5 featuring halogen free TO 263 package and ROHS certification
Key Attributes
Model Number:
LWS6004A5
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
145A
RDS(on):
4.2mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.8V@250uA
Reverse Transfer Capacitance (Crss@Vds):
86pF
Output Capacitance(Coss):
1.583nF
Input Capacitance(Ciss):
9.123nF
Pd - Power Dissipation:
183W
Gate Charge(Qg):
135nC@10V
Mfr. Part #:
LWS6004A5
Package:
TO-263
Product Description
Product Overview
The LWS6004A5 is a high-performance P-Channel Power MOSFET from LW-Micro, utilizing advanced SGT technology for excellent RDS(ON) and low gate charge. It is designed for efficient power management in hard-switched and high-frequency applications, offering fast switching and low reverse transfer capacitances. This device is 100% DVDS and Avalanche tested, ensuring reliability. The TO-263 package is ROHS compliant and Halogen Free.
Product Attributes
- Brand: LW-Micro
- Material: Silicon
- Certifications: ROHS standard, Halogen Free
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Units | Conditions |
| Absolute Maximum Ratings | ||||||
| Drain-to-Source Voltage | VDSS | -60 | V | |||
| Gate-to-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | -145 | A | TC=25 | ||
| Continuous Drain Current | ID | -92 | A | TC=100 | ||
| Pulsed Drain Current | IDM | -580 | A | a1 | ||
| Power Dissipation | PD | 800 | W | a3Surface Mounted on FR4 Board, t ≤ 10 sec. | ||
| Single pulse avalanche energy | EAS | 1960 | mJ | a2 | ||
| Maximum Temperature for Soldering | TL | 260 | ||||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | |||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Ambient | RθJA | 60 | /W | |||
| Thermal Resistance, Junction-to-Case | RθJC | 0.68 | /W | |||
| Static Characteristics | ||||||
| Drain to Source Breakdown Voltage | VDSS | -60 | V | VGS=0V, ID=-250µA | ||
| Gate to Source Breakdown Voltage | VGS(BR) | ±20 | V | ID=-10µA | ||
| Drain to Source Leakage Current | IDSS | -1.0 | µμA | VDS=-60V, VGS=0V | ||
| Gate to Source Leakage Current | IGSS(F) | -100 | nA | VGS=+20V, VDS=0V | ||
| Gate to Source Reverse Leakage | IGSS(R) | -2.0 | µμA | VGS=-20V, VDS=0V | ||
| Gate Threshold Voltage | VGS(TH) | -2.3 | -2.7 | -3.5 | V | VDS=VGS, ID=-250µA |
| Drain-to-Source On-Resistance | RDS(ON) | 4.2 | mΩ | VGS=-10V, ID=-20A | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | 1583 | pF | VGS = 0V, VDS =-30V, f = 1.0MHz | ||
| Output Capacitance | Coss | 9123 | pF | VGS = 0V, VDS =-30V, f = 1.0MHz | ||
| Reverse Transfer Capacitance | Crss | 183 | pF | VGS = 0V, VDS =-30V, f = 1.0MHz | ||
| Total Gate Charge | Qg | 22 | nC | VDS = -30V, ID =-20A, VGS =-10V | ||
| Gate Drain Charge | Qgd | 1.2 | nC | VDS = -30V, ID =-20A, VGS =-10V | ||
| Gate Source Charge | Qgs | 136 | nC | VDS = -30V, ID =-20A, VGS =-10V | ||
| Turn-on Delay Time | td(ON) | 45 | ns | ID =-20A, VDS =-30V, VGS =-10V, RG = 3.0Ω | ||
| Rise Time | tr | 165 | ns | ID =-20A, VDS =-30V, VGS =-10V, RG = 3.0Ω | ||
| Turn-Off Delay Time | td(OFF) | 50 | ns | ID =-20A, VDS =-30V, VGS =-10V, RG = 3.0Ω | ||
| Fall Time | tf | 28 | ns | ID =-20A, VDS =-30V, VGS =-10V, RG = 3.0Ω | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | -1.2 | V | IS=-20A, VGS=0V | ||
| Diode Forward Current | IS | -145 | A | TC =25 °C | ||
| Diode Pulse Current | ISM | -580 | A | a2 | ||
2509041621_Lewa-Micro-LWS6004A5_C20630417.pdf
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