NPN Digital Transistor LGE DTC114ECA Featuring Built In Bias Resistors For Streamlined Device Design
Product Overview
The DTC114EE/DTC114EUA/DTC114EKA/DTC114ECA/DTC114ESA is an NPN digital transistor featuring built-in bias resistors. This design eliminates the need for external input resistors, simplifying circuit configuration, particularly for inverter circuits. The integrated thin-film resistors offer complete isolation, enabling negative input biasing and minimizing parasitic effects. Operation is streamlined by requiring only the setting of on/off conditions, which facilitates device design.
Product Attributes
- Type: Digital Transistor (NPN)
- Brand: LG SEMI (implied by URL and email)
Technical Specifications
| Parameter | Symbol | Models | Min. | Typ. | Max. | Unit | Conditions |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | VCC | DTC114E | 50 | V | (Ta=25) | ||
| VIN | DTC114E | -10 | 40 | V | (Ta=25) | ||
| IC(MAX) | DTC114E | 50 | mA | (Ta=25) | |||
| Pd | DTC114EE | 150 | mW | (Ta=25) | |||
| Pd | DTC114EUA | 200 | mW | (Ta=25) | |||
| Pd | DTC114EKA / DTC114ECA / DTC114ESA | 300 | mW | (Ta=25) | |||
| Tj | DTC114E | 150 | (Ta=25) | ||||
| Tstg | DTC114E | -55 | 150 | (Ta=25) | |||
| Electrical Characteristics | VI(off) | DTC114E | 0.5 | V | VCC=5V ,IO=100A | ||
| VI(on) | DTC114E | 3 | V | VO=0.3V ,IO=10 mA | |||
| VO(on) | DTC114E | 0.3 | V | IO/II=10mA/0.5mA | |||
| II | DTC114E | 0.88 | mA | VI=5V | |||
| IO(off) | DTC114E | 0.5 | A | VCC=50V, VI=0 | |||
| GI | DTC114E | 30 | VO=5V ,IO=5mA | ||||
| R1 | DTC114E | 7 | 10 | 13 | K | ||
| R2/R1 | DTC114E | 0.8 | 1 | 1.2 | |||
| Transition frequency | fT | DTC114E | 250 | MHz | VO=10V ,IO=5mA,f=100MHz |
Models: DTC114EE, DTC114EUA, DTC114EKA, DTC114ECA, DTC114ESA
Package Types: SOT-523, SOT-323, SOT-23, TO-92S
Abbreviated Symbols: 24
2410121947_LGE-DTC114ECA_C5369350.pdf
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