NPN Digital Transistor LGE DTC114ECA Featuring Built In Bias Resistors For Streamlined Device Design

Key Attributes
Model Number: DTC114ECA
Product Custom Attributes
Output Voltage(VO(on)):
300mV
Input Resistor:
10kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
DTC114ECA
Package:
SOT-23
Product Description

Product Overview

The DTC114EE/DTC114EUA/DTC114EKA/DTC114ECA/DTC114ESA is an NPN digital transistor featuring built-in bias resistors. This design eliminates the need for external input resistors, simplifying circuit configuration, particularly for inverter circuits. The integrated thin-film resistors offer complete isolation, enabling negative input biasing and minimizing parasitic effects. Operation is streamlined by requiring only the setting of on/off conditions, which facilitates device design.

Product Attributes

  • Type: Digital Transistor (NPN)
  • Brand: LG SEMI (implied by URL and email)

Technical Specifications

Parameter Symbol Models Min. Typ. Max. Unit Conditions
Absolute Maximum Ratings VCC DTC114E 50 V (Ta=25)
VIN DTC114E -10 40 V (Ta=25)
IC(MAX) DTC114E 50 mA (Ta=25)
Pd DTC114EE 150 mW (Ta=25)
Pd DTC114EUA 200 mW (Ta=25)
Pd DTC114EKA / DTC114ECA / DTC114ESA 300 mW (Ta=25)
Tj DTC114E 150 (Ta=25)
Tstg DTC114E -55 150 (Ta=25)
Electrical Characteristics VI(off) DTC114E 0.5 V VCC=5V ,IO=100A
VI(on) DTC114E 3 V VO=0.3V ,IO=10 mA
VO(on) DTC114E 0.3 V IO/II=10mA/0.5mA
II DTC114E 0.88 mA VI=5V
IO(off) DTC114E 0.5 A VCC=50V, VI=0
GI DTC114E 30 VO=5V ,IO=5mA
R1 DTC114E 7 10 13 K
R2/R1 DTC114E 0.8 1 1.2
Transition frequency fT DTC114E 250 MHz VO=10V ,IO=5mA,f=100MHz

Models: DTC114EE, DTC114EUA, DTC114EKA, DTC114ECA, DTC114ESA

Package Types: SOT-523, SOT-323, SOT-23, TO-92S

Abbreviated Symbols: 24


2410121947_LGE-DTC114ECA_C5369350.pdf

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