Durable LGE GBU8J Silicon Bridge Rectifier with 600 Volt Maximum Recurrent Peak Voltage and Construction
Key Attributes
Model Number:
GBU8J
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
200A
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - Forward(Vf@If):
1.1V@8A
Current - Rectified:
8A
Voltage - DC Reverse(Vr):
600V
Mfr. Part #:
GBU8J
Package:
GBU
Product Description
Silicon Bridge Rectifiers GBU8A-GBU8M
High-performance silicon bridge rectifiers designed for printed circuit board applications. These devices feature a rating to 1000V PRV and a surge overload capability of 200 Amperes peak. Their reliable, low-cost construction utilizes a molded plastic technique, making them an inexpensive yet dependable solution. Lead solderable per MIL-STD-202 method 208 and featuring glass passivated junctions.
- Brand: LG (implied by URL and email)
- Origin: Not specified
- Material: Molded plastic, Glass passivated junctions
- Color: Not specified
- Certifications: MIL-STD-202 method 208 (lead solderability)
Technical Specifications
| Characteristic | Symbol | GBU8A | GBU8B | GBU8D | GBU8G | GBU8J | GBU8K | GBU8M | Units |
| Maximum recurrent peak reverse voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum RMS voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
| Maximum DC blocking voltage | VDC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum average forward Output current @TC=100 | IF(AV) | 8.0 | A | ||||||
| Peak forward surge current 8.3ms single half-sine-wav superimposed on rated load | IFSM | 200 | A | ||||||
| Operating junction temperature range | TJ | - 55 ---- + 150 | |||||||
| Storage temperature range | TSTG | - 55 ---- + 150 | |||||||
| Maximum instantaneous forward voltage @4.0A | VF | 1.0 | V | ||||||
| Maximum reverse current @TA=25 at rated DC blocking voltage | IR | 5.0 | A | ||||||
| Maximum reverse current @TA=125 | IR | 0.5 | mA | ||||||
| It Rating for fusing @Tj=25 | It | 9166 | AS | ||||||
| Typical thermal resistance (note2) (note1) | RJA | 2 | /W | ||||||
| Typical thermal resistance (note2) (note1) | RJC | 1.6 | /W | ||||||
| Typical junctionp capacitance per element(note 3) | CJ | 211 | pF | ||||||
Notes:
1. Unit case mounted on 3.2x3.2x0.12" thick (6.2x8.2x0.3cm) AI. Plate
2. Units mounted in free air, no heat sink on P.C.B., 0.5x0.5"(12x12mm) copper pads, 0.375"(9.5mm) lead length.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0 volts.
2410121918_LGE-GBU8J_C5455779.pdf
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