86--136 6733 2386
quality SMAFL package diode LangJie SS26F Schottky barrier rectifier for low voltage high frequency circuits factory
quality SMAFL package diode LangJie SS26F Schottky barrier rectifier for low voltage high frequency circuits factory

SMAFL package diode LangJie SS26F Schottky barrier rectifier for low voltage high frequency circuits

Key Attributes
Model Number: SS26F
Product Custom Attributes
Reverse Leakage Current (Ir):
10uA@60V
Non-Repetitive Peak Forward Surge Current:
50A
Operating Junction Temperature Range:
-65℃~+150℃
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
60V
Voltage - Forward(Vf@If):
700mV@2A
Current - Rectified:
2A
Mfr. Part #:
SS26F
Package:
SMAF
Product Description

Product Overview

The SS22F thru SS220F series are surface mount Schottky barrier rectifiers designed for low voltage, high frequency applications. They feature a low profile SMAFL package with built-in strain relief, high switching speed, and low voltage drop for high efficiency. These rectifiers are suitable for use in inverters, free-wheeling, and polarity protection applications, with a guardring for over-voltage protection.

Product Attributes

  • Brand: CHANGZHOU LANGJIE ELECTRONICS CO.,LTD
  • Origin: CHANGZHOU
  • Package: SMAFL
  • Material: Transfer molded plastic (UL 94V-0 rated flame retardant epoxy)
  • Lead Finish: Solder plated, solderable per MIL-STD-750 method 2026
  • Polarity: Color band denotes cathode end

Technical Specifications

Type NumberMax. Repetitive Peak Reverse Voltage (VRRM)Max. RMS Voltage (VRMS)Max. DC Blocking Voltage (VDC)Max. Average Forward Rectified Current (I(AV)) at TL=100Peak Forward Surge Current (IFSM) 8.3msMax. Instantaneous Forward Voltage @ 2.0A (VF)Max. DC Reverse Current (IR) TA=25Max. DC Reverse Current (IR) TA=100Typical Thermal Resistance (RJL)Diode Junction Capacitance (CJ)
SS22F20V14V20V2.0A50A0.55V0.1mA20.0mA25/W30pF
SS24F40V28V40V0.70V0.01mA10.0mA
SS25F50V35V50V0.85V0.01mA10.0mA
SS26F60V42V60V0.95V0.01mA10.0mA
SS28F80V56V80V0.95V0.01mA10.0mA
SS210F100V70V100V0.95V0.01mA10.0mA
SS215F150V105V150V0.95V0.01mA10.0mA
SS220F200V140V200V0.95V0.01mA10.0mA
ParameterValue
Operating Junction Temperature (TJ)-55 to +150
Storage Temperature Range (TSTG)-65 to +150
Weight0.00095ounce, 0.028grams

2410121610_LangJie-SS26F_C7450494.pdf

Related Products
quality Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications factory
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
quality General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage factory
General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage
Product OverviewThe BCX56 is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a low collector-emitter saturation voltage and is housed in a SOT-89 package with UL-94 V-0 flammability rating. Halogen-free options are available upon request. This ...
quality General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification factory
General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification
Product OverviewThe BZX584B2V4 THRU BZX584B36V series are high-reliability Zener diodes featuring very sharp reverse characteristics and low reverse current levels. They are designed for general-purpose applications and are available with Zener voltages ranging from 2.4V to 36V.Product AttributesBra...
quality Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD factory
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.