Silicon Bridge Rectifier LGE DB157S with 1000 Volt Peak Reverse Voltage and Molded Plastic Construction
Product Overview
The DB151S-DB157S series are silicon bridge rectifiers designed for applications requiring high voltage and surge handling capabilities. They feature glass passivated chip junctions and a reliable, inexpensive molded plastic construction. These rectifiers are suitable for lead soldering per MIL-STD-202 method 208.
Product Attributes
- Brand: LG Semiconductor (implied by URL)
- Origin: Not specified
- Material: Lead: silver plated copper, solderde plated; Plastic material has UL flammability classification 94V-O
- Color: Not specified
- Certifications: UL flammability classification 94V-O
Technical Specifications
| Characteristic | Symbol | DB151S | DB152S | DB153S | DB154S | DB155S | DB156S | DB157S | Units |
| Maximum Recurrent Peak Reverse Voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum RMS Reverse Voltage | VRMS | 35 | 75 | 140 | 280 | 420 | 560 | 700 | V |
| Maximum DC Blocking Voltage | VDC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum average forward Output current @TA=40 | IF(AV) | 1.5 | A | ||||||
| Peak forward surge current 8.3ms single half-sine-wave superimposed on rated load | IFSM | 50 | A | ||||||
| It Rating for fusing @Tj=25 | It | 10 | AS | ||||||
| Maximum instantaneous forward voltage at 1.5A | VF | 1.1 | V | ||||||
| Maximum reverse current @TA=25 at rated DC blocking voltage | IR | 5 | A | ||||||
| Maximum reverse current @TA=100 | IR | 0.5 | mA | ||||||
| Operating junction temperature range | TJ | -55 -- +150 | |||||||
| Storage temperature range | TSTG | -55 -- +150 | |||||||
| Typical thermal resistance junction to ambient | JA | 70 | /W | ||||||
| Typical thermal resistance junction to case | JC | 31 | /W | ||||||
| Typical thermal resistance junction to lead | JL | 29 | /W | ||||||
2410121933_LGE-DB157S_C402236.pdf
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