Power MOSFET Leiditech NTA7002NT1G N-Channel Enhancement Mode Ideal for Low Voltage Drive Applications
Key Attributes
Model Number:
NTA7002NT1G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
150mA
RDS(on):
6Ω@4.5V,150mA
Operating Temperature -:
-55℃~+150℃
Reverse Transfer Capacitance (Crss@Vds):
4pF
Number:
1 N-channel
Input Capacitance(Ciss):
13pF
Pd - Power Dissipation:
150mW
Mfr. Part #:
NTA7002NT1G
Package:
SOT-523
Product Description
Product Overview
The NTA7002NT1G is an N-channel enhancement mode Power MOSFET designed for low voltage drive applications. It features low on-resistance and fast switching speed, making it ideal for portable equipment and interfacing/switching applications. The device is easily designed into drive circuits and is suitable for paralleling.
Product Attributes
- Brand: Leiditech
- Model: NTA7002NT1G
- Type: N-Channel Enhancement Mode Power MOSFET
- Package: SOT-523
- Origin: Shanghai Leiditech Electronic Co.,Ltd
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| MOSFET MAXIMUM RATINGS (Ta = 25C unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | 0.15 | A | |||
| Power Dissipation | PD | 0.15 | W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -55 | ~+150 | |||
| Thermal Resistance, Junction-to-Ambient | RJA | 833 | /W | |||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | VDS(BR)DSS | VGS = 0V, ID = 10A | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =30V,VGS = 0V | 1 | A | ||
| Gate Source leakage current | IGSS | VGS =20V, VDS = 0V | 2 | A | ||
| Gate Threshold Voltage | VGS(th) | VDS =3V, ID =100A | 1.5 | V | ||
| On Characteristics | ||||||
| Drain-Source On-Resistance | RDS(on) | VGS = 10V, ID =200mA | 0.15 | 0.4 | ||
| Drain-Source On-Resistance | RDS(on) | VGS =4.5V,ID =150mA | 0.6 | |||
| Forward Transconductance | gFS | VDS =3V, ID =10mA | 20 | mS | ||
| Dynamic Characteristics* | ||||||
| Input Capacitance | Ciss | VDS =5V,VGS =0V,f =1MHz | 13 | pF | ||
| Output Capacitance | Coss | VDS =5V,VGS =0V,f =1MHz | 4 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =5V,VGS =0V,f =1MHz | 4 | pF | ||
| Switching Characteristics* | ||||||
| Turn-On Delay Time | td(on) | VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500 | 15 | ns | ||
| Rise Time | tr | VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500 | 35 | ns | ||
| Turn-Off Delay Time | td(off) | VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500 | 80 | ns | ||
| Fall Time | tf | VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500 | 80 | ns | ||
| Package Dimensions (SOT-523) | ||||||
| Dimension | Symbol | Min | Max | Inches Min | Inches Max | Unit |
| A | 0.70 | 0.90 | 0.028 | 0.035 | mm | |
| A1 | 0.00 | 0.10 | 0.000 | 0.004 | mm | |
| A2 | 0.70 | 0.80 | 0.028 | 0.031 | mm | |
| b1 | 0.15 | 0.25 | 0.006 | 0.010 | mm | |
| b2 | 0.25 | 0.35 | 0.010 | 0.014 | mm | |
| c | 0.10 | 0.20 | 0.004 | 0.008 | mm | |
| D | 1.50 | 1.70 | 0.059 | 0.067 | mm | |
| E | 0.70 | 0.90 | 0.028 | 0.035 | mm | |
| E1 | 1.45 | 1.75 | 0.057 | 0.069 | mm | |
| e | 0.50 TYP. | 0.020 TYP. | mm | |||
| e1 | 0.90 | 1.10 | 0.035 | 0.043 | mm | |
| L | 0.40 REF. | 0.016 REF. | mm | |||
| L1 | 0.10 | 0.30 | 0.004 | 0.012 | mm | |
*These parameters have no way to verify.
Contact Information:
Shanghai Leiditech Electronic Co.,Ltd
Email: sale1@leiditech.com
Tel : +86- 021 50828806
Fax : +86- 021 50477059
Website: www.leiditech.com
2410121630_Leiditech-NTA7002NT1G_C5349369.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
