Rectification with LangJie US1MF Surface Mount Rectifier Featuring Glass Passivated Chip Technology
Key Attributes
Model Number:
US1MF
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
50A
Reverse Leakage Current (Ir):
5uA
Reverse Recovery Time (trr):
75ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
1kV
Voltage - Forward(Vf@If):
1.7V@1A
Current - Rectified:
1A
Mfr. Part #:
US1MF
Package:
SMAF
Product Description
Product Overview
The US1AF thru US1MF series is a high-efficiency surface mount rectifier designed for general-purpose applications. Featuring fast recovery, low forward voltage drop, and high surge capability, these rectifiers are suitable for use in power supplies, converters, and other electronic circuits requiring efficient rectification. The glass passivated chip ensures reliability and performance.
Product Attributes
- Brand: CHANGZHOU LANGJIE ELECTRONICS CO.,LTD
- Origin: China
- Certifications: ROHS 2002/95/1, WEEE 2002/96/EC
Technical Specifications
| Type Number | VRRM (Volts) | VRMS (Volts) | VDC (Volts) | I(AV) (Amps) | IFSM (Amps) | VF (Volts) @ 1.0A | IR (A) @ TA=25 | TRR (nS) | CJ (pF) | RJA (/W) | RJL (/W) | TJ () | TSTG () |
| US1AF | 50 | 35 | 50 | 1.0 | 50 | 1.0 | 5.0 | 50 | 20 | 180 | 120 | (-55 to +150) | (-55 to +150) |
| US1BF | 100 | 70 | 100 | 1.30 | 5.0 | 50 | 20 | ||||||
| US1DF | 200 | 140 | 200 | 1.70 | 5.0 | 50 | 20 | ||||||
| US1GF | 400 | 280 | 400 | 1.70 | 5.0 | 50 | 20 | ||||||
| US1JF | 600 | 420 | 600 | 1.70 | 5.0 | 50 | 20 | ||||||
| US1KF | 800 | 560 | 800 | 1.70 | 5.0 | 50 | 20 | ||||||
| US1MF | 1000 | 700 | 1000 | 1.70 | 5.0 | 50 | 20 |
2410122023_LangJie-US1MF_C7450500.pdf
Related Products
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation
Small Signal Zener DiodesThe BZX584C2V4Q thru BZX584C47VQ series are small signal Zener diodes designed for general regulation functions. These diodes feature an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. They are moisture sensitivity level 1 and AEC-Q101 qualified ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
