20V P Channel Enhancement Mode MOSFET Leiditech PMV48XPA with Low On State Resistance and Low Gate Charge
Key Attributes
Model Number:
PMV48XPA
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.3A
RDS(on):
165mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
34pF@10V
Number:
1 P-Channel
Input Capacitance(Ciss):
290pF@10V
Pd - Power Dissipation:
700mW
Gate Charge(Qg):
3nC@4.5V
Mfr. Part #:
PMV48XPA
Package:
SOT-23
Product Description
Product Overview
The PMV48XPA is a 20V P-Channel Enhancement Mode MOSFET designed for applications requiring excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V. Leveraging advanced trench technology, this device is suitable for battery protection, load switching, and uninterruptible power supply applications. Its key features include a low on-state resistance and efficient switching characteristics.
Product Attributes
- Brand: Leiditech
- Model Series: PMV48XPA
- Technology: Advanced Trench
- Package Type: SOT-23
Technical Specifications
| Parameter | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| General Features | |||||
| VDS (Drain-Source Voltage) | -20 | V | |||
| RDS(ON) (Drain-Source On-State Resistance) | VGS=-4.5V, ID=-2A | 135 | 165 | m | |
| RDS(ON) (Drain-Source On-State Resistance) | VGS=-2.5V, ID=-1.8A | 150 | 185 | m | |
| ID (Drain Current-Continuous) | -2.3 | A | |||
| PD (Maximum Power Dissipation) | (TC=25) | 0.7 | W | ||
| Absolute Maximum Ratings | |||||
| VDS (Drain-Source Voltage) | -20 | V | |||
| VGS (Gate-Source Voltage) | 12 | V | |||
| ID (Drain Current-Continuous) | -2.3 | A | |||
| IDM (Drain Current - Pulsed) | (Note 1) | -10 | A | ||
| PD (Maximum Power Dissipation) | (TC=25) | 0.7 | W | ||
| TJ,TSTG (Operating Junction and Storage Temperature Range) | -55 | 150 | |||
| RJA (Thermal Resistance, Junction-to-Ambient) | (Note 2) | 178 | /W | ||
| Electrical Characteristics (TJ=25, unless otherwise noted) | |||||
| BVDSS (Drain-Source Breakdown Voltage) | VGS=0V, ID=-250A | -20 | V | ||
| IDSS (Zero Gate Voltage Drain Current) | VDS=-20V,VGS=0V | -1 | A | ||
| IGSS (Gate-Body Leakage Current) | VGS=12V,VDS=0V | 100 | nA | ||
| VGS(th) (Gate Threshold Voltage) | VDS=VGS,ID=-250A | -0.5 | -0.7 | -1.2 | V |
| RDS(ON) (Drain-Source On-State Resistance) | VGS=-4.5V, ID=-2 A | 135 | 165 | m | |
| RDS(ON) (Drain-Source On-State Resistance) | VGS=-2.5V, ID=-1.8A | 150 | 185 | m | |
| gFS (Forward Transconductance) | VDS=-5V,ID=-2A | 4 | S | ||
| Clss (Input Capacitance) | VDS=-10V,VGS=0V, F=1.0MHz | 290 | PF | ||
| Coss (Output Capacitance) | 60 | PF | |||
| Crss (Reverse Transfer Capacitance) | 34 | PF | |||
| td(on) (Turn-on Delay Time) | VDD=-10V, RL=5, VGS=- 4.5V,RGEN=3 | 10 | nS | ||
| tr (Turn-on Rise Time) | 5.0 | nS | |||
| td(off) (Turn-Off Delay Time) | 21 | nS | |||
| tf (Turn-Off Fall Time) | 7 | nS | |||
| Qg (Total Gate Charge) | VDS=-10V,ID=-2A, VGS=-4.5V | 3.0 | nC | ||
| Qgs (Gate-Source Charge) | 0.5 | nC | |||
| Qgd (Gate-Drain Charge) | 0.8 | nC | |||
| VSD (Diode Forward Voltage) | (Note 3) VGS=0V,IS=-2A | -1.2 | V | ||
| Package Information | |||||
| Device Marking | PMV48XPA | ||||
| Package | SOT-23 | ||||
| Reel Size | 180mm | ||||
| Tape width | 8 mm | ||||
| Quantity | 3000 units | ||||
| SOT-23 Package Mechanical Data | |||||
| Symbol | Dimensions in Millimeters | MIN. | MAX. | ||
| A | 0.900 | 1.150 | |||
| A1 | 0.000 | 0.100 | |||
| A2 | 0.900 | 1.050 | |||
| b | 0.300 | 0.500 | |||
| c | 0.080 | 0.150 | |||
| D | 2.800 | 3.000 | |||
| E | 1.200 | 1.400 | |||
| E1 | 2.250 | 2.550 | |||
| e | 0.950TYP | ||||
| e1 | 1.800 | 2.000 | |||
| L | 0.550REF | ||||
| L1 | 0.300 | 0.500 | |||
| 0 | 8 | ||||
2410121740_Leiditech-PMV48XPA_C3647030.pdf
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