Leiditech SQ2308CES 60V N Channel Enhancement Mode MOSFET Suitable for Load Switches and UPS Systems
Key Attributes
Model Number:
SQ2308CES
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3A
RDS(on):
100mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
35pF
Number:
1 N-channel
Input Capacitance(Ciss):
715pF
Pd - Power Dissipation:
1W
Gate Charge(Qg):
7nC@4.5V
Mfr. Part #:
SQ2308CES
Package:
SOT-23
Product Description
Product Overview
The SQ2308CES is a 60V N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V. This device is ideally suited for battery protection and other switching applications. Key features include VDS = 60V, ID = 3A, and RDS(ON) < 100m @ VGS=10V. Applications include load switches and uninterruptible power supplies.
Product Attributes
- Brand: Leiditech
- Model: SQ2308CES
- Technology: Advanced Trench Technology
- Channel Type: N-Channel Enhancement Mode
- Package Type: SOT-23
- Device Marking: SQ2308CES
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TC=25 unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | 60 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V1 | 3.0 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V1 | 1.8 | A | |||
| IDM | Pulsed Drain Current2 | 9.2 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 1 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction-Ambient1 | 125 | /W | |||
| RJC | Thermal Resistance Junction-Case1 | 80 | /W | |||
| Electrical Characteristics (TJ=25, unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 60 | --- | --- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | 0.054 | --- | V/ | |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=2A | 80 | 100 | m | |
| VGS=4.5V , ID=1A | 85 | 110 | VGS | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | --- | 2.5 | V |
| VGS(th)/TJ | VGS(th) Temperature Coefficient | -4.96 | --- | mV/ | ||
| IDSS | Drain-Source Leakage Current | VDS=48V , VGS=0V , TJ=25 | --- | 1 | uA | |
| VDS=48V , VGS=0V , TJ=55 | --- | 5 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | 100 | nA | |
| gfs | Forward Transconductance | VDS=5V , ID=2A | 13 | --- | S | |
| Qg Total Gate Charge | (4.5V) | VDS=48V , VGS=4.5V , ID=2A | 5 | 7.0 | nC | |
| Qgs | Gate-Source Charge | 1.68 | 2.4 | |||
| Qgd | Gate-Drain Charge | 1.9 | 2.7 | |||
| td(on) | Turn-On Delay Time | VDD=30V , VGS=10V , RG=3.3 , ID=2A | 1.6 | 3.2 | ns | |
| tr | Rise Time | 7.2 | 13 | |||
| td(off) | Turn-Off Delay Time | 25 | 50 | |||
| tf | Fall Time | 14.4 | 28.8 | |||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 511 | 715 | pF | |
| Coss | Output Capacitance | 38 | 53 | |||
| Crss | Reverse Transfer Capacitance | 25 | 35 | |||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | --- | 2.3 | A | |
| ISM | Pulsed Source Current2,4 | --- | 9.2 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | 1.2 | V | |
| trr | Reverse Recovery Time | IF=2A , dI/dt=100A/s , TJ=25 | 9.7 | --- | nS | |
| Qrr | Reverse Recovery Charge | 5.8 | --- | nC | ||
| Dimensions (SOT-23) | ||||||
| Symbol | Dimensions in Millimeters | MIN. | MAX. | |||
| A | 0.900 | 1.150 | ||||
| A1 | 0.000 | 0.100 | ||||
| A2 | 0.900 | 1.050 | ||||
| b | 0.300 | 0.500 | ||||
| c | 0.080 | 0.150 | ||||
| D | 2.800 | 3.000 | ||||
| E | 1.200 | 1.400 | ||||
| E1 | 2.250 | 2.550 | ||||
| e | 0.950TYP | |||||
| e1 | 1.800 | 2.000 | ||||
| L | 0.550REF | |||||
| L1 | 0.300 | 0.500 | ||||
| 0 | 8 | |||||
Notes:
- 1 The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
- 2 The data tested by pulsed, pulse width 300s, duty cycle 2%.
- 3 The power dissipation is limited by 150 junction temperature.
- 4 The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2410121618_Leiditech-SQ2308CES_C3647057.pdf
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