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quality 20V N Channel MOSFET Leiditech NVR4501N Featuring Low RDS ON and Suitable for Switching Applications factory
quality 20V N Channel MOSFET Leiditech NVR4501N Featuring Low RDS ON and Suitable for Switching Applications factory

20V N Channel MOSFET Leiditech NVR4501N Featuring Low RDS ON and Suitable for Switching Applications

Key Attributes
Model Number: NVR4501N
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6.8A
RDS(on):
21mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
80pF
Number:
1 N-channel
Output Capacitance(Coss):
140pF
Input Capacitance(Ciss):
780pF
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
11nC@4.5V
Mfr. Part #:
NVR4501N
Package:
SOT-23
Product Description

Product Overview

The NVR4501N is a 20V N-Channel Enhancement Mode MOSFET designed with advanced trench technology, offering excellent RDS(ON) and low gate charge. It operates effectively with gate voltages as low as 2.5V, making it suitable for battery protection applications and other switching scenarios. Key applications include lithium battery protection, wireless impact devices, and mobile phone fast charging.

Product Attributes

  • Brand: Leiditech
  • Model: NVR4501N
  • Package Type: SOT-23

Technical Specifications

Symbol Parameter Conditions Min Typ Max Units
VDS Drain-Source Voltage 20 V
VGS Gate-Source Voltage 20 V
ID@TA=25 Continuous Drain Current (TA=25) 6.8 A
ID@TA=70 Continuous Drain Current (TA=70) 6.0 A
IDM Pulsed Drain Current 30 A
PD@TA=25 Total Power Dissipation (TA=25) 1.5 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
RJA Thermal Resistance Junction-ambient 1 83 /W
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250A 20 22 V
VGS(th) Gate Threshold Voltage VDS= VGS, ID=250A 0.50 0.65 1.0 V
RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=4A 16 21 m
RDS(ON) Static Drain-Source On-Resistance VGS=2.5V, ID=3A 20 30 m
IDSS Zero Gate Voltage Drain Current VDS=20V,VGS=0V 1 A
IGSS Gate-Body Leakage Current VGS=10V, VDS=0V 100 nA
Ciss Input Capacitance VDS=10V,VGS=0V,f=1MHZ 780 pF
Coss Output Capacitance VDS=10V,VGS=0V,f=1MHZ 140 pF
Crss Reverse Transfer Capacitance VDS=10V,VGS=0V,f=1MHZ 80 pF
Qg Total Gate Charge VGS=4.5V,VDS=10V,ID=6.8A 11 nC
Qgs Gate-Source Charge VGS=4.5V,VDS=10V,ID=6.8A 2.3 nC
Qgd Gate-Drain Charge VGS=4.5V,VDS=10V,ID=6.8A 2.9 nC
tD(on) Turn-on Delay Time VGS=4.5V, VDS=10V, ID=6.8A RGEN=3 9 ns
tr Turn-on Rise Time VGS=4.5V, VDS=10V, ID=6.8A RGEN=3 30 ns
tD(off) Turn-off Delay Time VGS=4.5V, VDS=10V, ID=6.8A RGEN=3 35 ns
tf Turn-off fall Time VGS=4.5V, VDS=10V, ID=6.8A RGEN=3 10 ns
VSD Diode Forward Voltage IS=6.8A,VGS=0V 1.2 V
Device Marking NVR4501N
Package SOT-23
Reel Size 180mm
Tape width 8 mm
Quantity 3000 units
Symbol Dimensions in Millimeters MIN. MAX.
A 0.900 1.150
A1 0.000 0.100
A2 0.900 1.050
b 0.300 0.500
c 0.080 0.150
D 2.800 3.000
E 1.200 1.400
E1 2.250 2.550
e 0.950 TYP
e1 1.800 2.000
L 0.550 REF
L1 0.300 0.500
0 8

2410121514_Leiditech-NVR4501N_C3647035.pdf

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