N channel MOSFET Leiditech FDD3672 with trench technology providing switching and battery protection
Key Attributes
Model Number:
FDD3672
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+175℃
RDS(on):
28mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
250pF
Number:
1 N-channel
Pd - Power Dissipation:
85W
Input Capacitance(Ciss):
2nF
Gate Charge(Qg):
39nC@10V
Mfr. Part #:
FDD3672
Package:
TO-252
Product Description
Product Overview
The FDD3672 is an enhancement mode, N-channel MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 4.5V. This device is well-suited for battery protection and other switching applications, providing reliable performance and efficiency.Product Attributes
- Brand: Leiditech
- Product ID: FDD3672
- Package: TO-252
- Channel Type: N-Channel
- Mode: Enhancement Mode
- Revision: 2.0
- Date: 12.01.2019
Technical Specifications
| Symbol | Parameter | Condition | Limit | Unit |
|---|---|---|---|---|
| VDS | Drain-Source Voltage | 100 | V | |
| VGS | Gate-Source Voltage | 20 | V | |
| ID | Drain Current-Continuous | 50 | A | |
| ID (100) | Drain Current-Continuous(TC=100) | 21 | A | |
| IDM | Pulsed Drain Current | 70 | A | |
| PD | Maximum Power Dissipation | 85 | W | |
| Derating factor | 0.57 | W/ | ||
| EAS | Single pulse avalanche energy (Note 5) | 256 | mJ | |
| TJ,TSTG | Operating Junction and Storage Temperature Range | -55 To 175 | ||
| RJC | Thermal Resistance, Junction-to-Case (Note 2) | 1.8 | /W | |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 100 | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=100V,VGS=0V | 1 | A |
| IGSS | Gate-Body Leakage Current | VGS=20V,VDS=0V | 100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS=VGS,ID=250A | 1 - 3 | V |
| RDS(ON) | Drain-Source On-State Resistance | VGS=10V, ID=20A | - 24 - 28 | m |
| RDS(ON) | Drain-Source On-State Resistance | VGS=4.5V, ID=10A | - 28 - 30 | m |
| gFS | Forward Transconductance | VDS=5V,ID=10A | - 15 - | S |
| Clss | Input Capacitance | VDS=25V,VGS=0V, F=1.0MHz | - 2000 - | PF |
| Coss | Output Capacitance | - 300 - | PF | |
| Crss | Reverse Transfer Capacitance | - 250 - | PF | |
| td(on) | Turn-on Delay Time | VDD=50V,RL=5 VGS=10V,RGEN=3 | - 7 - | nS |
| tr | Turn-on Rise Time | - 7 - | nS | |
| td(off) | Turn-Off Delay Time | - 29 - | nS | |
| tf | Turn-Off Fall Time | - 7 - | nS | |
| Qg | Total Gate Charge | VDS=50V,ID=10A, VGS=10V | - 39 - | nC |
| Qgs | Gate-Source Charge | - 8 - | nC | |
| Qgd | Gate-Drain Charge | - 12 - | nC | |
| VSD | Diode Forward Voltage (Note 3) | VGS=0V,IS=20A | - - 1.2 | V |
| IS | Diode Forward Current (Note 2) | - - 30 | A | |
| trr | Reverse Recovery Time | TJ = 25C, IF = 10A di/dt = 100A/s(Note3) | - 32 - | nS |
| Qrr | Reverse Recovery Charge | - 53 - | nC | |
| Pack Marking | FDD3672 AP50N10D | |||
| Ordering Information | Qty(PCS) | 2500 |
2410121503_Leiditech-FDD3672_C5128399.pdf
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