N Channel 20V MOSFET Leiditech STR2N2VH5 Featuring Low Gate Charge and Trench Technology for Switching Devices
Key Attributes
Model Number:
STR2N2VH5
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6.8A
RDS(on):
21mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
80pF
Number:
1 N-channel
Output Capacitance(Coss):
140pF
Input Capacitance(Ciss):
780pF
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
11nC@4.5V
Mfr. Part #:
STR2N2VH5
Package:
SOT-23
Product Description
Product Overview
The STR2N2VH5 is a 20V N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 2.5V. This device is well-suited for battery protection applications and other switching applications, including wireless impact and mobile phone fast charging.
Product Attributes
- Brand: Leiditech
- Model: STR2N2VH5
- Technology: Advanced Trench Technology
- Package Type: SOT-23
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| General Features | ||||||
| VDS | Drain-Source Voltage | 20 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TA=25 | Continuous Drain Current | 6.8 | A | |||
| ID@TA=70 | Continuous Drain Current | 6.0 | A | |||
| IDM | Pulsed Drain Current | (Note 2) | 30 | A | ||
| PD@TA=25 | Total Power Dissipation | (Note 3) | 1.5 | W | ||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction-ambient | (Note 1) | 83 | /W | ||
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 20 | 22 | V | |
| VGS(th) | Gate Threshold Voltage | VDS= VGS, ID=250A | 0.50 | 0.65 | 1.0 | V |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=4.5V, ID=4A | 16 | 21 | m | |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=2.5V, ID=3A | 20 | 30 | m | |
| IDSS | Zero Gate Voltage Drain Current | VDS=20V,VGS=0V | 1 | A | ||
| IGSS | Gate-Body Leakage Current | VGS=10V, VDS=0V | 100 | nA | ||
| Ciss | Input Capacitance | VDS=10V,VGS=0V,f=1MHZ | 780 | pF | ||
| Coss | Output Capacitance | 140 | pF | |||
| Crss | Reverse Transfer Capacitance | 80 | pF | |||
| Qg | Total Gate Charge | VGS=4.5V,VDS=10V,ID=6.8A | 11 | nC | ||
| Qgs | Gate-Source Charge | 2.3 | nC | |||
| Qgd | Gate-Drain Charge | 2.9 | nC | |||
| tD(on) | Turn-on Delay Time | VGS=4.5V, VDS=10V, ID=6.8A RGEN=3 | 9 | ns | ||
| tr | Turn-on Rise Time | 30 | ns | |||
| tD(off) | Turn-off Delay Time | 35 | ns | |||
| tf | Turn-off fall Time | 10 | ns | |||
| VSD | Diode Forward Voltage | IS=6.8A,VGS=0V | 1.2 | V | ||
| Package Information | ||||||
| Device Marking | STR2N2VH5 | |||||
| Package | SOT-23 | |||||
| Reel Size | 180mm | |||||
| Tape width | 8 mm | |||||
| Quantity | 3000 units | |||||
Notes:
1. Data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2. Data tested by pulsed, pulse width 300s, duty cycle 2%.
3. Power dissipation is limited by 150 junction temperature.
4. Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.
2410121514_Leiditech-STR2N2VH5_C3647038.pdf
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