86--136 6733 2386
quality Leiditech PMV20XNEA 20V N Channel Enhancement Mode MOSFET for wireless impact and battery protection factory
quality Leiditech PMV20XNEA 20V N Channel Enhancement Mode MOSFET for wireless impact and battery protection factory

Leiditech PMV20XNEA 20V N Channel Enhancement Mode MOSFET for wireless impact and battery protection

Key Attributes
Model Number: PMV20XNEA
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6.8A
RDS(on):
21mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
80pF
Number:
1 N-channel
Output Capacitance(Coss):
140pF
Input Capacitance(Ciss):
780pF
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
11nC@4.5V
Mfr. Part #:
PMV20XNEA
Package:
SOT-23
Product Description

Product Overview

The PMV20XNEA is a 20V N-Channel Enhancement Mode MOSFET designed for high-performance switching applications. It leverages advanced trench technology to deliver excellent RDS(ON), low gate charge, and efficient operation with gate voltages as low as 2.5V. This device is ideally suited for battery protection in lithium-ion applications, wireless impact systems, and mobile phone fast charging solutions, providing reliable performance in demanding scenarios.

Product Attributes

  • Brand: Leiditech
  • Model: PMV20XNEA
  • Package Type: SOT-23

Technical Specifications

Symbol Parameter Conditions Min Typ Max Units
General Features
VDS Drain-Source Voltage 20 V
VGS Gate-Source Voltage ±20 V
ID@TA=25 Continuous Drain Current 6.8 A
ID@TA=70 Continuous Drain Current 6.0 A
IDM Pulsed Drain Current 30 A
PD@TA=25 Total Power Dissipation 1.5 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
RJA Thermal Resistance Junction-ambient 1 83 /W
Electrical Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250µA 20 22 V
VGS(th) Gate Threshold Voltage VDS= VGS, ID=250µA 0.50 0.65 1.0 V
RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=4A 16 21 mΩ
RDS(ON) Static Drain-Source On-Resistance VGS=2.5V, ID=3A 20 30 mΩ
IDSS Zero Gate Voltage Drain Current VDS=20V,VGS=0V 1 µA
IGSS Gate-Body Leakage Current VGS=±10V, VDS=0V ±100 nA
Ciss Input Capacitance VDS=10V,VGS=0V,f=1MHZ 780 pF
Coss Output Capacitance 140 pF
Crss Reverse Transfer Capacitance 80 pF
Qg Total Gate Charge VGS=4.5V,VDS=10V,ID=6.8A 11 nC
Qgs Gate-Source Charge 2.3 nC
Qgd Gate-Drain Charge 2.9 nC
tD(on) Turn-on Delay Time VGS=4.5V, VDS=10V, ID=6.8A RGEN=3Ω 9 ns
tr Turn-on Rise Time 30 ns
tD(off) Turn-off Delay Time 35 ns
tf Turn-off fall Time 10 ns
VSD Diode Forward Voltage IS=6.8A,VGS=0V 1.2 V
Package Information
Package Type SOT-23
Reel Size Ø180mm
Tape Width 8 mm
Quantity 3000 units
Dimensions (SOT-23)
Symbol Dimensions in Millimeters MIN. MAX.
A 0.900 1.150
A1 0.000 0.100
A2 0.900 1.050
b 0.300 0.500
c 0.080 0.150
D 2.800 3.000
E 1.200 1.400
E1 2.250 2.550
e 0.950TYP
e1 1.800 2.000
L 0.550REF
L1 0.300 0.500
θ 0° 8°

2410121514_Leiditech-PMV20XNEA_C3647036.pdf

Related Products
quality Integrated bias resistor digital transistor YANGJIE DTC143ECA suitable for surface mount and inverter circuit factory
Integrated bias resistor digital transistor YANGJIE DTC143ECA suitable for surface mount and inverter circuit
Product OverviewThe DTC143ECA is a digital transistor with built-in resistors, designed for surface mount applications. Its integrated bias resistors simplify inverter circuit configuration by eliminating the need for external input resistors. This component is manufactured by Yangzhou Yangjie ...
quality Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications factory
Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications
Product OverviewThe BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in lead-free versions. These diodes offer a wide range of Zener voltages ...
quality 400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications factory
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
quality YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages factory
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.