Load Switching with Leiditech PMV27UPEA P Channel Enhancement Mode MOSFET Featuring Low Gate Charge
Key Attributes
Model Number:
PMV27UPEA
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.9A
RDS(on):
88mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
160pF
Number:
1 P-Channel
Pd - Power Dissipation:
1.31W
Input Capacitance(Ciss):
1.2nF@15V
Gate Charge(Qg):
14.3nC@4.5V
Mfr. Part #:
PMV27UPEA
Package:
SOT-23
Product Description
Product Overview
The PMV27UPEA is a P-Channel Enhancement Mode MOSFET designed with advanced trench technology. It offers excellent RDS(ON), low gate charge, and the capability to operate with gate voltages as low as 4.5V. This device is well-suited for battery protection and other switching applications, including load switching and uninterruptible power supplies.
Product Attributes
- Brand: Leiditech
- Device Marking: PMV27UPEA
- Package: SOT-23
- Reel Size: 180mm
- Tape Width: 8 mm
- Quantity: 3000 units
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TC=25 unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | -20 | V | |||
| VGS | Gate-Source Voltage | 12 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ -4.5V1 | -4.9 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ -4.5V1 | -3.9 | A | |||
| IDM | Pulsed Drain Current2 | -14 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 1.31 | W | |||
| PD@TA=70 | Total Power Dissipation3 | 0.84 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction-Ambient1 | 120 | /W | |||
| RJA | Thermal Resistance Junction-Ambient1 (t 10s) | 95 | /W | |||
| Electrical Characteristics (TJ=25, unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -20 | V | ||
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | -0.014 | V/ | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-4.9A | 32 | 38 | m | |
| VGS=-2.5V , ID=-3.4A | 45 | 55 | ||||
| VGS=-1.8V , ID=-2A | 65 | 85 | ||||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -0.4 | -1.0 | V | |
| VGS(th) | VGS(th) Temperature Coefficient | 3.95 | mV/ | |||
| IDSS | Drain-Source Leakage Current | VDS=-16V , VGS=0V , TJ=25 | -1 | uA | ||
| VDS=-16V , VGS=0V , TJ=55 | -5 | |||||
| IGSS | Gate-Source Leakage Current | VGS=12V , VDS=0V | 100 | nA | ||
| gfs | Forward Transconductance | VDS=-5V , ID=-3A | 12.8 | S | ||
| Qg | Total Gate Charge (-4.5V) | VDS=-15V , VGS=-4.5V , ID=-3A | 10.2 | 14.3 | nC | |
| Qgs | Gate-Source Charge | 1.89 | 2.6 | |||
| Qgd | Gate-Drain Charge | 3.1 | 4.3 | |||
| td(on) | Turn-On Delay Time | VDD=-10V , VGS=-4.5V , RG=3.3 , ID=-3A | 5.6 | 11.2 | ns | |
| tr | Rise Time | 40.8 | 73 | |||
| td(off) | Turn-Off Delay Time | 33.6 | 67 | |||
| tf | Fall Time | 18 | 36 | |||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | 857 | 1200 | pF | |
| Coss | Output Capacitance | 114 | 160 | |||
| Crss | Reverse Transfer Capacitance | 108 | 151 | |||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | -4.9 | A | ||
| ISM | Pulsed Source Current2,4 | -14 | A | |||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | -1 | V | ||
| trr | Reverse Recovery Time | IF=-3A , di/dt=100A/s , TJ=25 | 21.8 | nS | ||
| Qrr | Reverse Recovery Charge | 6.9 | nC | |||
| Notes: 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2. The data tested by pulsed, pulse width 300us, duty cycle 2%. 3. The power dissipation is limited by 150 junction temperature. 4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation. | ||||||
| Package Mechanical Data-SOT-23 | ||
|---|---|---|
| Symbol | Dimensions in Millimeters | |
| A | MIN. | MAX. |
| 0.900 | 1.150 | |
| A1 | 0.000 | 0.100 |
| A2 | 0.900 | 1.050 |
| b | 0.300 | 0.500 |
| c | 0.080 | 0.150 |
| D | 2.800 | 3.000 |
| E | 1.200 | 1.400 |
| E1 | 2.250 | 2.550 |
| e | 0.950 TYP | |
| e1 | 1.800 | 2.000 |
| L | 0.550 REF | |
| L1 | 0.300 | 0.500 |
| 0 | 8 | |
2409292333_Leiditech-PMV27UPEA_C3647043.pdf
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