DFN3 3 8L Package N Channel Enhancement Mode MOSFET Leiditech LM3D65N06 for Continuous Drain Current
Key Attributes
Model Number:
LM3D65N06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
20A
RDS(on):
13mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4.1pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
1.1821nF@50V
Pd - Power Dissipation:
60W
Gate Charge(Qg):
18.4nC@10V
Mfr. Part #:
LM3D65N06
Package:
DFN3x3-8L
Product Description
Product Overview
The LM3D65N06 is an N-Channel Enhancement Mode Power MOSFET designed for various power applications. It features a DFN3*3-8L package and offers a high continuous drain current capability. This MOSFET is suitable for applications requiring efficient power switching and management.
Product Attributes
- Brand: Leiditech
- Model Series: AP65N06DF
- Product Code: LM3D65N06
- Channel Type: N-Channel
- Mode: Enhancement Mode
- Package Type: DFN3*3-8L
- Origin: Shanghai Leiditech Electronic Co.,Ltd
- Website: www.leiditech.com
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain source voltage | VDS | @Tj=25 | 60 | V | ||
| Gate source voltage | VGS | @Tj=25 | 20 | V | ||
| Continuous drain current | ID@TA=25 | 20 | A | |||
| Continuous drain current | ID@TA=70 | 11 | A | |||
| Pulsed drain current | IDM | 60 | A | |||
| Power dissipation | PD@TA=25 | 60 | W | |||
| Single pulsed avalanche energy | EAS | 30 | mJ | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operation and storage temperature | Tj | -55 | 150 | |||
| Thermal resistance, junction-case | RJC | 2.1 | C/W | |||
| Thermal resistance, junction-ambient | RJA 5) | 85 | C/W | |||
| Electrical Characteristics | ||||||
| Drain-source breakdown voltage | BVDSS | VGS=0 V, ID=250 A | 60 | 68 | V | |
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=250 A | 1.2 | 1.5 | 2.5 | V |
| Drain-source on-state resistance | RDS(ON) | VGS=10 V, ID=20 A | 7.5 | 10 | m | |
| Drain-source on-state resistance | RDS(ON) | VGS=4.5 V, ID=10 A | 10 | 13 | m | |
| Gate-source leakage current | IGSS | VGS=20 V | 100 | nA | ||
| Drain-source leakage current | IDSS | VDS=60 V, VGS=0 V | 1 | A | ||
| Input capacitance | Ciss | VGS=0 V, VDS=50 V, =100 kHz | 1182.1 | pF | ||
| Output capacitance | Coss | VGS=0 V, VDS=50 V, =100 kHz | 199.5 | pF | ||
| Reverse transfer capacitance | Crss | VGS=0 V, VDS=50 V, =100 kHz | 4.1 | pF | ||
| Turn-on delay time | td(on) | VGS=10 V, VDS=50 V, RG=2 , ID=10 A | 17.9 | ns | ||
| Rise time | tr | VGS=10 V, VDS=50 V, RG=2 , ID=10 A | 4.0 | ns | ||
| Turn-off delay time | td(off) | VGS=10 V, VDS=50 V, RG=2 , ID=10 A | 34.9 | ns | ||
| Fall time | tf | VGS=10 V, VDS=50 V, RG=2 , ID=10 A | 5.5 | ns | ||
| Total gate charge | Qg | ID=10 A, VDS=50 V, VGS=10 V | 18.4 | nC | ||
| Gate-source charge | Qgs | ID=10 A, VDS=50 V, VGS=10 V | 3.3 | nC | ||
| Gate-drain charge | Qgd | ID=10 A, VDS=50 V, VGS=10 V | 3.1 | nC | ||
| Gate plateau voltage | Vplateau | ID=10 A, VDS=50 V, VGS=10 V | 2.8 | V | ||
| Diode forward current | IS | VGS<Vth | 60 | A | ||
| Pulsed source current | ISP | 180 | ||||
| Diode forward voltage | VSD | IS=20 A, VGS=0 V | 1.3 | V | ||
| Reverse recovery time | trr | IS=10 A, di/dt=100 A/s | 41.8 | ns | ||
| Reverse recovery charge | Qrr | IS=10 A, di/dt=100 A/s | 36.1 | nC | ||
| Peak reverse recovery current | Irrm | IS=10 A, di/dt=100 A/s | 1.4 | A | ||
| Package Mechanical Data | ||||||
| Symbol | Common | mm | Min | Nom | Max | |
| Body Length | D | mm | 3.15 | 3.30 | 3.45 | |
| Body Width | E | mm | 3.15 | 3.30 | 3.45 | |
| Lead Width | b | mm | 0.20 | 0.30 | 0.40 | |
| Lead Thickness | c | mm | 0.10 | 0.152 | 0.25 | |
| Corner Radius | E3 | mm | 0.28 | 0.48 | 0.65 | |
| Corner Radius | E4 | mm | 0.37 | 0.57 | 0.77 | |
| Corner Radius | E5 | mm | 0.10 | 0.20 | 0.30 | |
| Pitch | e | mm | 0.60 | 0.65 | 0.70 | |
| Height | K | mm | 0.59 | 0.69 | 0.89 | |
| Lead Length | L | mm | 0.30 | 0.40 | 0.50 | |
| Lead Offset | L1 | mm | 0.06 | 0.125 | 0.20 | |
| Thickness | t | mm | 0 | 0.075 | 0.13 | |
| Diameter | mm | 10 | 12 | 14 | ||
Notes:
- 1. Calculated continuous current based on maximum allowable junction temperature.
- 2. Repetitive rating; pulse width limited by max. junction temperature.
- 3. Pd is based on max. junction temperature, using junction-case thermal resistance.
- 4. VDD=50 V, RG=50 , L=0.3 mH, starting Tj=25 .
- 5. The value of RJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 .
2410121549_Leiditech-LM3D65N06_C3647074.pdf
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