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quality Power MOSFET LGE LGE3M18120Q Silicon Carbide Device with 1200V Blocking Voltage and Ease of Parallel factory
quality Power MOSFET LGE LGE3M18120Q Silicon Carbide Device with 1200V Blocking Voltage and Ease of Parallel factory

Power MOSFET LGE LGE3M18120Q Silicon Carbide Device with 1200V Blocking Voltage and Ease of Parallel

Key Attributes
Model Number: LGE3M18120Q
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
105A
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
3.8V
Reverse Transfer Capacitance (Crss@Vds):
10pF
Input Capacitance(Ciss):
4.8nF
Pd - Power Dissipation:
428W
Output Capacitance(Coss):
225pF
Gate Charge(Qg):
235nC
Mfr. Part #:
LGE3M18120Q
Package:
TO-247-4
Product Description

LGE3M18120Q Silicon Carbide Power MOSFET

The LGE3M18120Q is a Silicon Carbide Power MOSFET designed for high-performance applications. It offers high blocking voltage (1200V) and low on-resistance (18m at 25C) with fast intrinsic diode performance and low reverse recovery. This device is ideal for applications requiring higher system efficiency, parallel device convenience without thermal runaway, and operation at high temperatures. It is well-suited for hard switching applications, offering higher reliability and ease of driving.

Product Attributes

  • Brand: LGE
  • Material: Silicon Carbide
  • Package: TO-247-4
  • Marking: LGE3M18120Q

Technical Specifications

Parameter Symbol Test conditions Value Unit
Maximum Ratings
Drain - Source Voltage VDSmax VGS=0V, ID=100A 1200 V
Gate - Source Voltage (dynamic) VGSmax AC (f>1 Hz) -10 / +25 V
Gate - Source Voltage (static) VGSop static -5 / +20 V
Continuous Drain Current ID VGS = 20V, TC=25C 105 A
Continuous Drain Current ID VGS = 20V, TC=100C 74 A
Pulsed Drain Current ID(pulse) TC=25C 220 A
Total power dissipation PD TC=25C 428 W
Avalanche Capability EAS VDD = 100V, VGS=20V, L=2mH 784 mJ
Avalanche Capability IAV VDD = 100V, VGS=20V, L=2mH 28 A
Operating Junction Temperature TJ -55 to 175 C
Storage Temperature TSTG -55 to 175 C
Electrical Characteristics
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 100A 1200 V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 20mA 1.9 / 2.45 / 3.8 V
Zero Gate Voltage Drain Current IDSS VDS = 1200V, VGS = 0V 0 / 1 / 50 A
Gate-Source Leakage Current IGSS VGS = 20V, VDS = 0V 0 / 1 / 200 nA
Gate-Source Leakage Current IGSS VGS = -5V, VDS = 0V -200 / -1 / 0 nA
Drain-Source On-State Resistance RDS(on) VGS = 20V, ID = 50 A 18 / 26 m
Drain-Source On-State Resistance RDS(on) VGS = 20V, ID = 50 A, TJ = 150C 30 m
Drain-Source On-State Resistance RDS(on) VGS = 20V, ID = 50 A, TJ = 175C 34 m
Drain-Source On-State Resistance RDS(on) VGS = 18V, ID = 50 A 20 m
Transconductance gfs VDS = 20V, ID = 50 A 39 S
Input capacitance Ciss VDS = 1000V, VGS = 0V f = 1MHz 4800 pF
Output capacitance Coss VDS = 1000V, VGS = 0V f = 1MHz 225 pF
Reverse transfer capacitance Crss VDS = 1000V, VGS = 0V f = 1MHz 10 pF
Output Capacitor Stored Energy Eoss 150 J
Total gate charge Qg VDS = 800V, VGS = -5V / 20V ID = 50 A 235 nC
Gate-source charge Qgs VDS = 800V, VGS = -5V / 20V ID = 50 A 62 nC
Gate-drain charge Qg VDS = 800V, VGS = -5V / 20V ID = 50 A 75 nC
Internal gate input resistance Rg(int) f = 1MHz, ID = 0A 3.6
Turn-On Switching Energy EON VDS = 800 V, VGS = -5V/20V, ID = 50A, RG(ext) =2, L=200H 400 J
Turn-Off Switching Energy EOFF VDS = 800 V, VGS = -5V/20V, ID = 50A, RG(ext) =2, L=200H 135 J
Turn-On Delay Time td(on) VDS = 800 V, VGS = -5V/20V, ID = 50A, RG(ext) =2, L=200H 15 ns
Rise Time tr VDS = 800 V, VGS = -5V/20V, ID = 50A, RG(ext) =2, L=200H 22 ns
Turn-Off Delay Time td(off) VDS = 800 V, VGS = -5V/20V, ID = 50A, RG(ext) =2, L=200H 44 ns
Fall Time tf VDS = 800 V, VGS = -5V/20V, ID = 50A, RG(ext) =2, L=200H 11 ns
Reverse Diode Characteristics
Diode Forward Voltage VSD VGS = -5V, ISD = 25A 4.3 V
Diode Forward Voltage VSD VGS = -5V, ISD = 25A, TJ = 150C 3.9 V
Diode Forward Voltage VSD VGS = -5V, ISD = 25A, TJ = 175C 3.8 V
Continuous Diode Forward Current IS VGS = -5V 91 A
Reverse Recovery time trr VGS = -5V, ISD = 50A, VR= 800V, dif/dt = 3700 A/s 30 ns
Reverse Recovery Charge Qrr VGS = -5V, ISD = 50A, VR= 800V, dif/dt = 3700 A/s 970 nC
Peak Reverse Recovery Current Irrm VGS = -5V, ISD = 50A, VR= 800V, dif/dt = 3700 A/s 53 A
Thermal Characteristics
Thermal Resistance (per device) Rth(j-c) junction-case 0.27 / 0.35 C/W

Applications

  • Motor Drives
  • Solar / Wind Inverters
  • EV Charging Station
  • AC/DC converters
  • DC/DC converters
  • Uninterruptable power supplies

2410301412_LGE-LGE3M18120Q_C28451336.pdf

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