Silicon Carbide MOSFET LGE LGE3M650170B Featuring Low Capacitance and Easy Drive for Power Conversion
Key Attributes
Model Number:
LGE3M650170B
Product Custom Attributes
Mfr. Part #:
LGE3M650170B
Package:
TO-247-3
Product Description
Product Overview
The LGE3M650170B is a Silicon Carbide Power MOSFET designed for high-performance applications. It offers high blocking voltage with low on-resistance, high-speed switching with low capacitance, and is easy to parallel and simple to drive. Key benefits include higher system efficiency, reduced cooling requirements, increased system reliability, and the ability to operate at increased system switching frequencies. This device is suitable for auxiliary power supplies, switch mode power supplies, and high-voltage capacitive applications.
Product Attributes
- Brand: LGE Semiconductor
- Material: Silicon Carbide
- Package: TO-247-3
- Part Number: LGE3M650170B
- Website: http://www.lgesemi.com
- Email: lge@lgesemi.com
- Revision: 20240217
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Conditions | Note |
|---|---|---|---|---|---|---|---|
| Maximum Ratings | |||||||
| Drain-Source Voltage | VDSmax | 1700 | V | VGS=0V, ID=100A | |||
| Gate-Source Voltage | VGSmax | -10 | +25 | V | Absolute maximum values | ||
| Gate-Source Voltage | VGSop | -5 | +20 | V | Recommended operational values | ||
| Continuous Drain Current | ID | 4.5 | 7.0 | A | VGS=20V, Tc=25 | ||
| Continuous Drain Current | ID | 4.5 | A | VGS=20V, Tc=100 | |||
| Pulsed Drain Current | ID(pulse) | 9.0 | A | Pulse width tp limited by TJmax | |||
| Power Dissipation | PD | 62 | W | Tc=25, TJ=150 | |||
| Operating Junction and Storage Temperature | TJ, TSTG | -55 | +150 | VDS = 1700 V, RDS(on) = 650 m, ID@25 = 7.0 A | |||
| Electrical Characteristics | |||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | 1700 | / | / | V | VGS=0V, ID=100A | |
| Gate Threshold Voltage | VGS(th) | 2.0 | 2.6 | 4.0 | V | VDS=VGS, ID=1.0mA | Fig. 11 |
| Gate Threshold Voltage | VGS(th) | / | 1.8 | / | V | VDS=VGS, ID=1.0mA, TJ=150 | |
| Zero Gate Voltage Drain Current | IDSS | / | 1 | 100 | A | VDS=1700V, VGS=0V | |
| Gate-Source Leakage Current | IGSS+ | / | 10 | 250 | nA | VDS=0V, VGS=25V | |
| Gate-Source Leakage Current | IGSS- | / | 10 | 250 | nA | VDS=0V, VGS=-10V | |
| Drain-Source On-State Resistance | RDS(on) | / | 650 | 850 | m | VGS=20V, ID=2.0A | |
| Drain-Source On-State Resistance | RDS(on) | / | 1300 | / | m | VGS=20V, ID=2.0A, TJ=150 | |
| Transconductance | gfs | / | 1.06 | / | S | VDS=20 V, ID=2.0 A | Fig. 4,5,6 |
| Transconductance | gfs | / | 1.14 | / | S | VDS=20V, ID=2.0A, TJ=150 | |
| Input Capacitance | Ciss | / | 194 | / | pF | VGS=0V, VDS=1000V, f=1MHz, VAC=25mV | Fig. 15,16 |
| Output Capacitance | Coss | / | 13 | / | pF | VGS=0V, VDS=1000V, f=1MHz, VAC=25mV | Fig. 15,16 |
| Reverse Transfer Capacitance | Crss | / | 1.8 | / | pF | VGS=0V, VDS=1000V, f=1MHz, VAC=25mV | Fig. 15,16 |
| Coss Stored Energy | Eoss | / | 6.6 | / | J | VDS=1200V, VGS=-5V/20V, ID=2.0A, RG(ext)=2.5, L=100H | |
| Turn-On Switching Energy | EON | / | 5 | / | mJ | VDS=1200V, VGS=-5V/20V, ID=2.0A, RG(ext)=2.5, L=100H | |
| Turn-On Delay Time | td(on) | / | 13.8 | / | ns | VDS=1200V, VGS=-5V/20V, ID=2.0A, RG(ext)=2.5, RL=20 | |
| Rise Time | tr | / | 22.8 | / | ns | VDS=1200V, VGS=-5V/20V, ID=2.0A, RG(ext)=2.5, RL=20 | |
| Turn-Off Delay Time | td(off) | / | 38 | / | ns | VDS=1200V, VGS=-5V/20V, ID=2.0A, RG(ext)=2.5, RL=20 | |
| Fall Time | tf | / | 14 | / | ns | VDS=1200V, VGS=-5V/20V, ID=2.0A, RG(ext)=2.5, RL=20 | |
| Internal Gate Resistance | RG(int) | / | 18 | / | f=1MHz, VAC=25mV | ||
| Gate to Source Charge | QGS | / | 5.4 | / | nC | VDS=1200V, VGS=-5V/20V, ID=2.0A | |
| Gate to Drain Charge | QGD | / | 7.6 | / | nC | VDS=1200V, VGS=-5V/20V, ID=2.0A | |
| Total Gate Charge | QG | / | 23 | / | nC | VDS=1200V, VGS=-5V/20V, ID=2.0A | |
| Reverse Diode Characteristics | |||||||
| Diode Forward Voltage | VSD | 4.2 | / | V | VGS=-5V, ISD=25A | Fig. 8,9,10 | |
| Diode Forward Voltage | VSD | 3.9 | / | V | VGS=-5V, ISD=25A, TJ=150 | ||
| Continuous Diode Forward Current | IS | / | 7.0 | A | TC=25 | ||
| Reverse Recover Time | trr | 25 | / | ns | VR=1200V, ISD=2.0A | ||
| Reverse Recovery Charge | Qrr | 15 | / | nC | VR=1200V, ISD=2.0A | ||
| Peak Reverse Recovery Current | Irrm | 2.8 | / | A | VR=1200V, ISD=2.0A | ||
| Thermal Characteristics | |||||||
| Thermal Resistance from Junction to Case | RJC | 1.8 | / | /W | |||
| Thermal Resistance from Junction to Ambient | RJA | / | 40 | / | /W | ||
2410301412_LGE-LGE3M650170B_C42372481.pdf
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