Power MOSFET LGE G2306 featuring Pb free and RoHS compliance for electronic switching applications
Key Attributes
Model Number:
G2306
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5A
RDS(on):
36mΩ@10V
Operating Temperature -:
-50℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
30pF
Output Capacitance(Coss):
35pF
Input Capacitance(Ciss):
240pF
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
6nC@10V
Mfr. Part #:
G2306
Package:
SOT-23
Product Description
Product Overview
The 30V/5.0A N Channel Advanced Power MOSFET G2306 is designed for efficient power management in various electronic applications. It features low RDS(on) at VGS=10V and 5V logic-level control, making it suitable for DC-to-DC converters, battery-driven portable devices, low-side load switching, switching circuits, and high-speed line drivers. This Pb-free and RoHS compliant component comes in a compact SOT23 package.
Product Attributes
- Brand: LGE Semiconductor
- Package: SOT23
- Certifications: Pb-Free, RoHS Compliant
- Channel Type: N Channel
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| Common Ratings (TA=25C Unless Otherwise Noted) | ||||||
| VGS | Gate-Source Voltage | 20 | V | |||
| (BR)DSS | Drain-Source Breakdown Voltage | 30 | V | |||
| TJ | Maximum Junction Temperature | 150 | C | |||
| TSTG | Storage Temperature Range | -50 | 150 | C | ||
| ID | Continuous Drain Current | TA=25C | 5.0 | A | ||
| ID | Continuous Drain Current | TA=70C | 4 | A | ||
| PD | Maximum Power Dissipation | TA=25C | 1.5 | W | ||
| PD | Maximum Power Dissipation | TA=70C | 0.9 | W | ||
| JA | Thermal Resistance Junction-Ambient | Mounted on Large Heat Sink | 80 | C/W | ||
| Static Electrical Characteristics @ TJ = 25C (unless otherwise stated) | ||||||
| (BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 30 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=30V, VGS=0V (TA=25) | 1 | A | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=24V, VGS=0V (TA=125) | 100 | uA | ||
| IGSS | Gate-Body Leakage Current | VGS=20V, VDS=0V | 100 | nA | ||
| VGS(TH) | Gate Threshold Voltage | VDS=VGS, ID=250A | 1.0 | 1.6 | 2.5 | V |
| RDS(ON) | Drain-Source On-State Resistance | VGS=10V, ID=4A | 28 | 36 | m | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=4.5V, ID=3A | 38 | 50 | m | |
| Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise stated) | ||||||
| Ciss | Input Capacitance | VDS=15V, VGS=0V, f=1MHz | 240 | pF | ||
| Coss | Output Capacitance | 35 | pF | |||
| Crss | Reverse Transfer Capacitance | 30 | pF | |||
| Qg | Total Gate Charge | VDS=15V, ID=4A, VGS=10V | 6 | nC | ||
| Qgs | Gate Source Charge | 0.5 | nC | |||
| Qgd | Gate Drain Charge | 1.3 | nC | |||
| Switching Characteristics | ||||||
| td(on) | Turn on Delay Time | VDD=15V, ID=1A, RG=3.3, VGS=10V | 4.4 | ns | ||
| tr | Turn on Rise Time | 2.6 | ns | |||
| td(off) | Turn Off Delay Time | 25.5 | ns | |||
| tf | Turn Off Fall Time | 3.3 | ns | |||
| Source Drain Diode Characteristics | ||||||
| ISD | Source drain current (Body Diode) | TA=25 | 1.8 | A | ||
| VSD | Forward on voltage | Tj=25, ISD=4A, VGS=0V | 0.85 | 1.2 | V | |
2409272232_LGE-G2306_C27975291.pdf
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