switching and battery protection with Leiditech PMV19XNEA 30V N Channel MOSFET low gate charge device
Key Attributes
Model Number:
PMV19XNEA
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.2A
RDS(on):
38mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
33pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
233pF@15V
Pd - Power Dissipation:
1W
Gate Charge(Qg):
3nC@10V
Mfr. Part #:
PMV19XNEA
Package:
SOT-23
Product Description
Product Overview
The PMV19XNEA is a 30V N-Channel Enhancement Mode MOSFET designed using advanced trench technology. It offers excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V. This device is highly suitable for battery protection and other switching applications, including lithium battery protection, wireless impact, and mobile phone fast charging.
Product Attributes
- Brand: Leiditech
- Model: PMV19XNEA
- Package Type: SOT-23
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| VDS | Drain-Source Voltage | - | - | - | 30 | V |
| VGS | Gate-Source Voltage | - | - | - | 20 | V |
| ID@TA=25 | Continuous Drain Current | - | - | - | 4.2 | A |
| ID@TA=70 | Continuous Drain Current | - | - | - | 2.6 | A |
| IDM | Pulsed Drain Current | - | - | - | 16 | A |
| PD | Power Dissipation | TA = 25 | - | - | 1 | W |
| RJA | Thermal Resistance, Junction to Ambient | - | - | - | 125 | /W |
| TJ, TSTG | Operating and Storage Temperature Range | - | -55 | - | +150 | |
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A30 | 32 | - | V | |
| IDSS | Zero Gate Voltage Drain Current | VDS=30V, VGS=0V- | - | 1.0 | A | |
| IGSS | Gate to Body Leakage Current | VDS=0V, VGS= 20V- | - | 100 | nA | |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250A1.2 | 1.5 | 2.5 | V | |
| RDS(on) | Static Drain-Source on-Resistance | VGS=10V, ID=4A- | 29 | 38 | m | |
| RDS(on) | Static Drain-Source on-Resistance | VGS=4.5V, ID=3A- | 45 | 65 | m | |
| Ciss | Input Capacitance | VDS=15V, VGS=0V, f=1.0MHz- | 233 | - | pF | |
| Coss | Output Capacitance | -- | 44 | - | pF | |
| Crss | Reverse Transfer Capacitance | -- | 33 | - | pF | |
| Qg | Total Gate Charge | VDS=15V, ID=2A, VGS=10V- | 3 | - | nC | |
| Qgs | Gate-Source Charge | -- | 0.5 | - | nC | |
| Qgd | Gate-Drain(Miller) Charge | -- | 0.8 | - | nC | |
| td(on) | Turn-on Delay Time | VDS=15V, ID=4A, RGEN=3, VGS=10V- | 4 | - | ns | |
| tr | Turn-on Rise Time | -- | 2.1 | - | ns | |
| td(off) | Turn-off Delay Time | -- | 15 | - | ns | |
| tf | Turn-off Fall Time | -- | 3.2 | - | ns | |
| IS | Maximum Continuous Drain to Source Diode Forward Current | -- | - | 4 | A | |
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | -- | - | 16 | A | |
| VSD | Drain to Source Diode Forward Voltage | VGS=0V, IS=4A- | - | 1.2 | V |
| Device Marking | Device Package | Reel Size | Tape width | Quantity |
|---|---|---|---|---|
| 3404B | SOT-23 | 180mm | 8 mm | 3000 units |
| Symbol | Dimensions in Millimeters | MIN. | MAX. |
|---|---|---|---|
| A | - | 0.900 | 1.150 |
| A1 | - | 0.000 | 0.100 |
| A2 | - | 0.900 | 1.050 |
| b | - | 0.300 | 0.500 |
| c | - | 0.080 | 0.150 |
| D | - | 2.800 | 3.000 |
| E | - | 1.200 | 1.400 |
| E1 | - | 2.250 | 2.550 |
| e | - | 0.950TYP | - |
| e1 | - | 1.800 | 2.000 |
| L | - | 0.550REF | - |
| L1 | - | 0.300 | 0.500 |
| - | 0 | 8 |
2410121536_Leiditech-PMV19XNEA_C3647049.pdf
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