Line frequency Thyristor module Littelfuse IXYS MCC21-14IO8B with RoHS compliance and TO-240AA package
Product Overview
The MCC21-14io8B is a phase leg Thyristor module designed for line frequency applications. It features a planar passivated chip, long-term stability, and a Direct Copper Bonded Al2O3-ceramic package with a DCB ceramic base plate for reduced weight and advanced power cycling. Suitable for applications like line rectifying, softstart AC motor control, DC motor control, power converters, AC power control, and lighting/temperature control.
Product Attributes
- Brand: IXYS
- Backside: Isolated
- Package: TO-240AA
- RoHS compliant
- Soldering pins for PCB mounting
- Isolation Voltage: 4800 V~
Technical Specifications
| Symbol | Definition | Conditions | Unit | min. | typ. | max. |
| It | value for fusing | t = 10 ms; (50 Hz), sine | As | 1400 | ||
| It | value for fusing | t = 8,3 ms; (60 Hz), sine | As | 1300 | ||
| It | value for fusing | t = 10 ms; (50 Hz), sine | As | 1400 | ||
| It | value for fusing | t = 8,3 ms; (60 Hz), sine | As | 1300 | ||
| It | value for fusing | t = 10 ms; (50 Hz), sine | As | 1400 | ||
| It | value for fusing | t = 8,3 ms; (60 Hz), sine | As | 1300 | ||
| It | value for fusing | t = 10 ms; (50 Hz), sine | As | 1400 | ||
| It | value for fusing | t = 8,3 ms; (60 Hz), sine | As | 1300 | ||
| RRM/DRM | max. repetitive reverse/forward blocking voltage | V | 1400 | |||
| RSM/DSM | max. non-repetitive reverse/forward blocking voltage | V | 1500 | |||
| T(RMS) | RMS current | 180 sine | A | 21 | ||
| TAV | average forward current | 180 sine | A | 13.5 | ||
| (di/dt)cr | critical rate of rise of current | repetitive, I = TVJ = 125C; f = 50 Hz | A/s | 150 | ||
| VGT | gate trigger voltage | V = 6 V | V | 0.85 | 1.52 | |
| IGT | gate trigger current | V = 6 V | mA | 0.2 | 0.5 | |
| VGD | gate non-trigger voltage | V = VDRM | V | 0.2 | ||
| IGD | gate non-trigger current | V = VDRM | mA | 5 | ||
| IL | latching current | mA | 100 | |||
| IH | holding current | mA | 100 | |||
| tgd | gate controlled delay time | I = 21 A; G = 0.3 di /dt | s | 2 | ||
| tq | turn-off time | I = 21 A; V = VDRM; T = 150C | s | 150 | ||
| RthJC | thermal resistance junction to case | K/W | 1.1 | |||
| RthCH | thermal resistance case to heatsink | K/W | 0.2 | |||
| TVJ | virtual junction temperature | C | -40 | 125 | ||
| Tstg | storage temperature | C | -40 | 125 | ||
| VT0 | threshold voltage | V | 0.85 | |||
| rT | slope resistance for power loss calculation only | m | 15 | |||
| Ptot | total power dissipation | W | 45 | 90 | ||
| PGM | max. gate power dissipation | t = 30 s | W | 10 | ||
| PGAV | average gate power dissipation | W | 0.5 | |||
| CJ | junction capacitance | VR = 400 V; f = 1 MHz | pF | 22 | ||
| ITSM | max. forward surge current | t = 10 ms; (50 Hz), sine | A | 1400 | ||
| (dv/dt)cr | critical rate of rise of voltage | T = 125C; method 1 (linear voltage rise) | V/s | 500 | ||
| VDRM | max. repetitive forward blocking voltage | V | 1400 | |||
| VRRM | max. repetitive reverse blocking voltage | V | 1400 | |||
| DRM | max. forward blocking voltage | V | 1400 | |||
| VRM | max. reverse blocking voltage | V | 1400 | |||
| R/D | reverse current, drain current | mA | 1 | |||
| M | mounting torque | Nm | 4 | |||
| M | terminal torque | Nm | 2.5 | |||
| dSpp/App | creepage distance on surface | mm | 16.0 | |||
| dSpb/Apb | striking distance through air | mm | 16.0 | |||
| ISOL | isolation voltage | t = 1 second | V~ | 4000 | ||
| ISOL | isolation voltage | t = 1 minute | V~ | 4800 | ||
| Weight | g | 81 |
2504101957_Littelfuse-IXYS-MCC21-14IO8B_C17399798.pdf
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