Power MOSFET 20V 4.2A N Channel LGE AO3414 Designed for Switching and DC DC Converters
Key Attributes
Model Number:
AO3414
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.5A
RDS(on):
22mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
600mV
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
42pF
Output Capacitance(Coss):
46pF
Input Capacitance(Ciss):
280pF
Gate Charge(Qg):
4.7nC@5V
Mfr. Part #:
AO3414
Package:
SOT-23
Product Description
Product Overview
The AO3414 is a 20V/4.2A N-Channel Advanced Power MOSFET designed for various switching applications. It features low RDS(on) at VGS=4.5V, 3.3V logic-level control, and is housed in a Pb-free, RoHS compliant SOT23 package. This device is ideal for load switching, DC/DC converters, switching circuits, and LED drivers, offering efficient power management.
Product Attributes
- Brand: LGE Semiconductor (implied by URL)
- Certifications: PbFree, RoHS Compliant
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 20 | -- | -- | V |
| ID | Continuous Drain Current | VGS=4.5V, TA=25C | -- | 4.5 | -- | A |
| ID | Continuous Drain Current | VGS=4.5V, TA=70C | -- | 3.6 | -- | A |
| RDS(ON) | Drain-Source On-State Resistance | VGS=4.5V, ID=4A | -- | 22 | 30 | m |
| RDS(ON) | Drain-Source On-State Resistance | VGS=3.3V, ID=2A | -- | 28 | 35 | m |
| RDS(ON) | Drain-Source On-State Resistance | VGS=2.5V, ID=1A | -- | 30 | 45 | m |
| VGS(TH) | Gate Threshold Voltage | VDS=VGS, ID=250A | 0.4 | 0.6 | 1.0 | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=20V, VGS=0V, TA=25 | -- | -- | 1 | A |
| IDSS | Zero Gate Voltage Drain Current | VDS=16V, VGS=0V, TA=125 | -- | -- | 100 | uA |
| IGSS | Gate-Body Leakage Current | VGS=10V, VDS=0V | -- | -- | 100 | nA |
| Qg | Total Gate Charge | VDS=10V, ID=3A, VGS=5V | -- | 4.7 | -- | nC |
| tr | Turn on Rise Time | VDD=10V, ID=4A, RG=3.3, VGS=4.5V | -- | 35 | -- | ns |
| tf | Turn Off Fall Time | VDD=10V, ID=4A, RG=3.3, VGS=4.5V | -- | 32 | -- | ns |
| ISD | Source drain current (Body Diode) | TA=25 | -- | -- | 1.8 | A |
| VSD | Forward on voltage (Body Diode) | ISD=2A, VGS=0V, Tj=25 | -- | 0.74 | 1.2 | V |
| PD | Maximum Power Dissipation | TA=25C | -- | 1.2 | -- | W |
| RJA | Thermal Resistance Junction-Ambient | Mounted on Large Heat Sink | -- | 100 | -- | C/W |
| TJ | Maximum Junction Temperature | -- | -- | 150 | -- | C |
| TSTG | Storage Temperature Range | -- | -50 | -- | 150 | C |
2509091530_LGE-AO3414_C51892140.pdf
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