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quality Fast Switching N Channel Enhancement Mode MOSFET Leiditech LNTA7002NT1G Ideal for Portable Equipment factory
quality Fast Switching N Channel Enhancement Mode MOSFET Leiditech LNTA7002NT1G Ideal for Portable Equipment factory

Fast Switching N Channel Enhancement Mode MOSFET Leiditech LNTA7002NT1G Ideal for Portable Equipment

Key Attributes
Model Number: LNTA7002NT1G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
150mA
RDS(on):
8Ω@4.5V,150mA
Operating Temperature -:
-55℃~+150℃
Reverse Transfer Capacitance (Crss@Vds):
4pF
Number:
1 N-channel
Input Capacitance(Ciss):
13pF
Pd - Power Dissipation:
150mW
Mfr. Part #:
LNTA7002NT1G
Package:
SOT-523
Product Description

Product Overview

The LNTA7002NT1G is an N-channel enhancement mode power MOSFET designed for low voltage drive applications. It features low on-resistance and fast switching speed, making it ideal for portable equipment and interfacing or switching applications. Its easily designed drive circuits and suitability for paralleling further enhance its utility.

Product Attributes

  • Brand: Leiditech
  • Model: LNTA7002NT1G
  • Type: N-Channel Enhancement Mode Power MOSFET
  • Package: SOT-523
  • Origin: Shanghai Leiditech Electronic Co.,Ltd

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
MOSFET MAXIMUM RATINGS (Ta = 25C unless otherwise noted)
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current ID 0.15 A
Power Dissipation PD 0.15 W
Junction Temperature TJ 150
Storage Temperature Tstg -55 ~+150
Thermal Resistance, Junction-to-Ambient RJA 833 /W
MARKING
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 10A 30 V
Drain-Source On-Resistance RDS(on)MAX VGS = 10V, ID =200mA 4
Drain-Source On-Resistance RDS(on)MAX VGS =4.5V,ID =150mA 8
Continuous Drain Current ID VGS = 10V 0.15 A
Continuous Drain Current ID VGS = 4.5V 0.15 A
Off Characteristics
Zero Gate Voltage Drain Current IDSS VDS =30V,VGS = 0V 1 A
Gate Source leakage current IGSS VGS =20V, VDS = 0V 2 A
Gate Threshold Voltage VGS(th) VDS = 3V, ID =100A 1.5 V
Drain-Source On-Resistance RDS(on) VGS = 10V, ID =200mA 2.6
Drain-Source On-Resistance RDS(on) VGS =4.5V, ID =150mA 6
Forward Transconductance gFS VDS =3V, ID =10mA 20 mS
Dynamic Characteristics*
Input Capacitance Ciss VDS =5V,VGS =0V,f =1MHz 13 pF
Output Capacitance Coss VDS =5V,VGS =0V,f =1MHz 9 pF
Reverse Transfer Capacitance Crss VDS =5V,VGS =0V,f =1MHz 4 pF
Switching Characteristics*
Turn-On Delay Time td(on) VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500 15 ns
Rise Time tr VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500 35 ns
Turn-Off Delay Time td(off) VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500 80 ns
Fall Time tf VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500 80 ns
Package Dimensions (SC-75A)
Dimension Millimeters (MIN-MAX) Inches (MIN-MAX)
A 0.70 - 0.90 0.028 - 0.035
A1 0.00 - 0.10 0.000 - 0.004
A2 0.70 - 0.80 0.028 - 0.031
b1 0.15 - 0.25 0.006 - 0.010
b2 0.25 - 0.35 0.010 - 0.014
c 0.10 - 0.20 0.004 - 0.008
D 1.50 - 1.70 0.059 - 0.067
E 0.70 - 0.90 0.028 - 0.035
E1 1.45 - 1.75 0.057 - 0.069
e 0.50 TYP. 0.020 TYP.
e1 0.90 - 1.10 0.035 - 0.043
L 0.40 REF. 0.016 REF.
L1 0.10 - 0.30 0.004 - 0.012

2410121630_Leiditech-LNTA7002NT1G_C5349370.pdf

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