Silicon Carbide Power MOSFET LGE LGE3M40120Q 1200V 40m Low On Resistance Fast Switching Device
Key Attributes
Model Number:
LGE3M40120Q
Product Custom Attributes
Mfr. Part #:
LGE3M40120Q
Package:
TO-247-4
Product Description
Product Overview
The LGE3M40120Q is a 1200V, 40m Silicon Carbide Power MOSFET designed for high-efficiency power conversion applications. It features low on-resistance, fast switching speeds with low capacitances, and a fast intrinsic diode with low reverse recovery. Its benefits include higher system efficiency, convenience for parallel device operation without thermal runaway, suitability for high-temperature applications, and enhanced reliability in hard switching scenarios.
Product Attributes
- Brand: LGE
- Material: Silicon Carbide (SiC)
- Package: TO-247-4
- Part Number: LGE3M40120Q
- Marking: LGE3M40120Q
- Website: http://www.lgesemi.com
- Email: lge@lgesemi.com
- Caution: Sensitive to electrostatic discharge. Users should follow ESD handling procedures.
Technical Specifications
| Parameter | Symbol | Units | Test Conditions | Min | Typ | Max |
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | V | 1200 | |||
| Drain Current - Continuous (TC = 25C) | ID | A | (Note 1) | 59 | ||
| Drain Current - Continuous (TC = 100C) | ID | A | (Note 1) | 45 | ||
| Drain Current - Pulsed | IDM | A | (Note 2) | 100 | ||
| Gate-Source Voltage (dynamic) | VGS | V | -10 | +22 | ||
| Gate-Source Voltage (static) | VGS | V | -6 | +18 | ||
| Power Dissipation (TC = 25C) | PD | W | 300 | |||
| Operating and Storage Temperature Range | TJ, TSTG | C | -55 | +175 | ||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Case, Steady-State | RJC | C/W | 0.5 | |||
| Thermal Resistance, Junction-to-Ambient, Steady-State | RJA | C/W | 120 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | V | VGS = 0 V, ID = 100 A | 1200 | ||
| Zero Gate Voltage Drain Current | IDSS | A | VDS = 1200 V, VGS = 0 V | 5 | 50 | |
| Gate Leakage Current | IGSS | nA | VGS = + 18 V, VDS = 0 V | 100 | ||
| Gate Leakage Current | IGSS | nA | VGS = - 6 V, VDS = 0 V | 100 | ||
| Gate Threshold voltage | VGS(TH) | V | VDS = VGS, ID = 9.5 mA | 2.2 | 3.2 | 4.5 |
| Forward Transconductance | GFS | S | VDS = 20 V, ID = 33.3 A | 16 | ||
| Drain-Source on-state resistance | RDS(ON) | m | VGS = 18 V, ID = 33.3 A, TJ = 25 C | 40 | 54 | |
| Drain-Source on-state resistance | RDS(ON) | m | VGS = 18 V, ID = 33.3 A, TJ = 175 C | 64 | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | CISS | pF | F = 1 MHz, VAC = 25 mV | 2360 | ||
| Output Capacitance | COSS | pF | 108 | |||
| Reverse Transfer Capacitance | CRSS | pF | 13 | |||
| Gate Resistance | RG | 3.3 | ||||
| Gate-Source Charge | QGS | nC | VDS = 800 V , ID = 33.3 A, VGS = -5/+18 V | 38 | ||
| Gate-Drain Charge | QGD | nC | 58 | |||
| Total Gate Charge | QG | nC | 128 | |||
| Stored Energy | EOSS | J | VDS = 800 V, VGS = 0 V, F = 100 kHz, VAC = 25 mV | 43 | ||
| Switching Characteristics (Note3) | ||||||
| Turn On Delay Time | TD(ON) | nS | VGS = -4 V , ISD = 20 A | 19 | ||
| Rise Time | TR | nS | VGS = -4 V , ISD = 20 A | 22 | ||
| Turn Off Delay Time | TD(OFF) | nS | VDD = 800 V , ID = 33.3 A, VGS = -5/+18 V, RG,EXT = 5 L = 99 H | 33 | ||
| Fall Time | TF | nS | VDD = 800 V , ID = 33.3 A, VGS = -5/+18 V, RG,EXT = 5 L = 99 H | 22 | ||
| Turn On Energy | EON | J | VDD = 800 V , ID = 33.3 A, VGS = -5/+18 V, RG,EXT = 5 L = 99 H | 1227 | ||
| Turn Off Energy | EOFF | J | VDD = 800 V , ID = 33.3 A, VGS = -5/+18 V, RG,EXT = 5 L = 99 H | 160 | ||
| Turn On Delay Time | TD(ON) | nS | VGS = -4 V , ISD = 33.3 A | 30 | ||
| Rise Time | TR | nS | VGS = -4 V , ISD = 33.3 A | 45 | ||
| Turn Off Delay Time | TD(OFF) | nS | VDD = 800 V , ID = 33.3 A, VGS = -5/+18 V, RG,EXT = 20 L = 99 H | 88 | ||
| Fall Time | TF | nS | VDD = 800 V , ID = 33.3 A, VGS = -5/+18 V, RG,EXT = 20 L = 99 H | 53 | ||
| Turn On Energy | EON | J | VDD = 800 V , ID = 33.3 A, VGS = -5/+18 V, RG,EXT = 20 L = 99 H | 1970 | ||
| Turn Off Energy | EOFF | J | VDD = 800 V , ID = 33.3 A, VGS = -5/+18 V, RG,EXT = 20 L = 99 H | 580 | ||
| Drain-Source Diode Characteristics | ||||||
| Maximum Continuous Drain-Source Diode Forward Current | IS | A | 59 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | A | 100 | |||
| Diode Forward Voltage | VSD | V | VGS = -4 V , ISD = 20 A, TJ = 175 C | 4 | ||
| Peak Reverse Recovery Current | IRM | A | VR = 800 V, di/dt = 650 A/S | 7.5 | ||
| Reverse Recovery Time | TRR | nS | VR = 800 V, di/dt = 650 A/S | 22 | ||
| Reverse Recovery Charge | QRR | nC | VR = 800 V, di/dt = 650 A/S | 92 | ||
2410301412_LGE-LGE3M40120Q_C25402767.pdf
Related Products
Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications
Product OverviewThe BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in lead-free versions. These diodes offer a wide range of Zener voltages ...
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
Surface mount digital transistor YANGJIE DTC114YE with built in resistors and RoHS compliant halogen free epoxy
Product OverviewThe DTC114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It features a moisture sensitivity level of 1 and an epoxy that meets UL-94 V-0 flammability rating and is halogen-free. This product is ...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
