30V N Channel MOSFET Leiditech IRLML0030 Featuring Low Gate Voltage and Trench Technology for Switching
Key Attributes
Model Number:
IRLML0030
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
38mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
33pF
Output Capacitance(Coss):
44pF
Input Capacitance(Ciss):
233pF
Pd - Power Dissipation:
1W
Gate Charge(Qg):
3nC@10V
Mfr. Part #:
IRLML0030
Package:
SOT-23
Product Description
Product Overview
The IRLML0030 is a 30V N-Channel Enhancement Mode MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 4.5V. This device is ideal for battery protection and other switching applications, including lithium battery protection, wireless impact, and mobile phone fast charging.
Product Attributes
- Brand: Leiditech
- Model: IRLML0030
- Technology: Advanced Trench Technology
- Package Type: SOT-23
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TC=25 unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TA=25 | Continuous Drain Current | 4.2 | A | |||
| ID@TA=70 | Continuous Drain Current | 2.6 | A | |||
| IDM | Pulsed Drain Current | 16 | A | |||
| PD | Power Dissipation | TA = 25 | 1 | W | ||
| RJA | Thermal Resistance, Junction to Ambient | 125 | /W | |||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | +150 | |||
| Electrical Characteristics (TJ=25, unless otherwise noted) | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 30 | 32 | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=30V, VGS=0V | - | - | 1.0 | A |
| IGSS | Gate to Body Leakage Current | VDS=0V, VGS= 20V | - | - | 100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250A | 1.2 | 1.5 | 2.5 | V |
| RDS(on) | Static Drain-Source on-Resistance note2 | VGS=10V, ID=4A | - | 29 | 38 | m |
| RDS(on) | Static Drain-Source on-Resistance | VGS=4.5V, ID=3A | - | 45 | 65 | m |
| Ciss | Input Capacitance | VDS=15V, VGS=0V, f=1.0MHz | - | 233 | - | pF |
| Coss | Output Capacitance | - | 44 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 33 | - | pF | |
| Qg | Total Gate Charge | VDS=15V, ID=2A, VGS=10V | - | 3 | - | nC |
| Qgs | Gate-Source Charge | - | 0.5 | - | nC | |
| Qgd | Gate-Drain(Miller) Charge | - | 0.8 | - | nC | |
| td(on) | Turn-on Delay Time | VDS=15V, ID=4A, RGEN=3, VGS=10V | - | 4 | - | ns |
| tr | Turn-on Rise Time | - | 2.1 | - | ns | |
| td(off) | Turn-off Delay Time | - | 15 | - | ns | |
| tf | Turn-off Fall Time | - | 3.2 | - | ns | |
| IS | Maximum Continuous Drain to Source Diode Forward Current | - | - | 4 | A | |
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | - | - | 16 | A | |
| VSD | Drain to Source Diode Forward Voltage | VGS=0V, IS=4A | - | - | 1.2 | V |
| Package Mechanical Data: SOT-23 | ||||||
| Symbol | Dimensions in Millimeters | MIN. | MAX. | |||
| A | 0.900 | 1.150 | ||||
| A1 | 0.000 | 0.100 | ||||
| A2 | 0.900 | 1.050 | ||||
| b | 0.300 | 0.500 | ||||
| c | 0.080 | 0.150 | ||||
| D | 2.800 | 3.000 | ||||
| E | 1.200 | 1.400 | ||||
| E1 | 2.250 | 2.550 | ||||
| e | 0.950TYP | |||||
| e1 | 1.800 | 2.000 | ||||
| L | 0.550REF | |||||
| L1 | 0.300 | 0.500 | ||||
| 0 | 8 | |||||
Device Marking and Ordering Information:
- Device Marking: IRLML0030
- Device Package: SOT-23
- Reel Size: 180mm
- Tape width: 8 mm
- Quantity: 3000 units
2207041730_Leiditech-IRLML0030_C3647050.pdf
Related Products
High Reliability Surface Mounted Rectifier ZHIDE SS510A Molded Plastic Epoxy UL 94V 0 Flame Retardant
Product OverviewThe SS52A-SS520A series are surface-mounted Schottky barrier rectifiers designed for high-reliability applications. They offer low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering. These rectifiers are compliant with RoHS standards, ...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification
Product OverviewThe BZX84B3V6Q thru BZX84B36Q series are small signal Zener diodes designed for general regulation functions. They feature epoxy encapsulation meeting UL-94 V-0 flammability rating and are halogen-free. These diodes offer a Zener voltage range from 3.6V to 36V with approximately 2% ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
