Telephony and Communication Equipment PNP Silicon Transistor LRC LMBTA92LT1G High Voltage Performance
Key Attributes
Model Number:
LMBTA92LT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
50MHz
Type:
PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
300V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LMBTA92LT1G
Package:
SOT-23
Product Description
Product Overview
The LESHAN RADIO COMPANY, LTD. LMBTA92LT1G and LMBTA93LT1G are PNP Silicon High Voltage Transistors designed for telephony and professional communication equipment applications. They offer high voltage capabilities and are available with an "S-" prefix for automotive and other applications requiring unique site and control change requirements, being AEC-Q101 Qualified and PPAP Capable.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Material: Silicon
- Certifications: AEC-Q101 Qualified and PPAP Capable (with S- prefix)
- RoHS Compliance: Declared
Technical Specifications
| Characteristic | Symbol | LMBTA92 | LMBTA93 | Unit | Conditions |
| MAXIMUM RATINGS | |||||
| CollectorEmitter Voltage | V CEO | 300 | 200 | Vdc | |
| CollectorBase Voltage | V CBO | 300 | 200 | Vdc | |
| EmitterBase Voltage | V EBO | 5.0 | 5.0 | Vdc | |
| Collector Current Continuous | I C | 500 | 500 | mAdc | |
| THERMAL CHARACTERISTICS | |||||
| Total Device Dissipation (FR 5 Board) | PD | 225 | mW | TA = 25C | |
| Derate above 25C (FR 5 Board) | 1.8 | mW/C | |||
| Thermal Resistance, Junction to Ambient (FR 5 Board) | RJA | 556 | C/W | ||
| Total Device Dissipation (Alumina Substrate) | PD | 300 | mW | TA= 25C | |
| Derate above 25C (Alumina Substrate) | 2.4 | mW/C | |||
| Thermal Resistance, Junction to Ambient (Alumina Substrate) | RJA | 417 | C/W | ||
| Junction and Storage Temperature | TJ , Tstg | 55 to +150 | C | ||
| ELECTRICAL CHARACTERISTICS | |||||
| DC Current Gain | hFE | 25 40 | 25 40 | (I C =1.0mAdc, V CE = 10 Vdc) Both Types; (I C = 10 mAdc, V CE = 10Vdc) Both Types | |
| DC Current Gain | hFE | 25 | 25 | (I C = 30mAdc, V CE =10 Vdc) LMBTA92; LMBTA93 | |
| CollectorEmitter Saturation Voltage | VCE(sat) | 0.5 | Vdc | (I C = 20mAdc, I B = 2.0 mAdc) | |
| BaseEmitter Saturation Voltage | V BE(sat) | 0.9 | Vdc | (I C = 20mAdc, I B = 2.0 mAdc) | |
| CurrentGain Bandwidth Product | f T | 50 | 50 | MHz | (I C = 10mAdc, V CE= 20Vdc, f = 100MHz) |
| Collector Base Capacitance | C cb | 6.0 | 8.0 | pF | (V CB = 20 Vdc, I E = 0, f = 1.0 MHz) |
| CollectorEmitter Breakdown Voltage | V(BR)CEO | 300 | 200 | Vdc | (IC = 1.0 mAdc, IB = 0) |
| CollectorEmitter Breakdown Voltage | V(BR)CBO | 300 | 200 | Vdc | (IC = 100 Adc, IE = 0) |
| EmitterBase Breakdown Voltage | V(BR)EBO | 5.0 | Vdc | (IE = 100 Adc, IC = 0) | |
| Collector Cutoff Current | ICBO | 0.1 | Adc | ( VCB = 200Vdc, IE = 0) | |
| Collector Cutoff Current | ICBO | 100 | Adc | ( VCB = 300Vdc, IE = 0) | |
| Collector Cutoff Current | ICBO | 100 | Adc | ( VCB = 300Vdc, IE = 0) | |
| EmitterBase Cutoff Current | IEBO | 0.05 | Adc | ( VEB = 6.0Vdc, IC = 0) | |
| EmitterBase Cutoff Current | IEBO | 0.05 | Adc | ( VEB = 5.0Vdc, IC = 0) | |
1810161814_LRC-LMBTA92LT1G_C78725.pdf
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