battery protection and switching using Leiditech NTRV4101P P Channel Enhancement Mode MOSFET device
Key Attributes
Model Number:
NTRV4101P
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.3A
RDS(on):
165mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
34pF
Number:
1 P-Channel
Output Capacitance(Coss):
60pF
Input Capacitance(Ciss):
290pF
Pd - Power Dissipation:
700mW
Gate Charge(Qg):
3nC@4.5V
Mfr. Part #:
NTRV4101P
Package:
SOT-23
Product Description
Product Overview
The NTRV4101P is a 20V P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with operation possible at gate voltages as low as 2.5V. This device is well-suited for battery protection and other switching applications, including uninterruptible power supplies and load switches. Its key features include low gate charge and the ability to operate with low gate voltages, making it an efficient choice for power management.Product Attributes
- Brand: Leiditech
- Technology: Advanced Trench Technology
- Mode: P-Channel Enhancement Mode
- Package: SOT-23
Technical Specifications
| Parameter | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings (TC=25 unless otherwise noted) | |||||
| VDS | Drain-Source Voltage | -20 | V | ||
| VGS | Gate-Source Voltage | 12 | V | ||
| ID | Drain Current-Continuous | -2.3 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | -10 | A | ||
| PD | Maximum Power Dissipation | 0.7 | W | ||
| TJ, TSTG | Operating Junction and Storage Temperature Range | -55 | 150 | ||
| RJA | Thermal Resistance, Junction-to-Ambient (Note 2) | 178 | /W | ||
| Electrical Characteristics (TJ=25, unless otherwise noted) | |||||
| BVDSS | Drain-Source Breakdown Voltage (VGS=0V, ID=-250A) | -20 | V | ||
| IDSS | Zero Gate Voltage Drain Current (VDS=-20V, VGS=0V) | -1 | A | ||
| IGSS | Gate-Body Leakage Current (VGS=12V, VDS=0V) | 100 | nA | ||
| VGS(th) | Gate Threshold Voltage (VDS=VGS, ID=-250A) | -0.5 | -0.7 | -1.2 | V |
| RDS(ON) | Drain-Source On-State Resistance (VGS=-4.5V, ID=-2 A) | 135 | 165 | m | |
| (VGS=-2.5V, ID=-1.8A) | 150 | 185 | m | ||
| gFS | Forward Transconductance (VDS=-5V, ID=-2A) | 4 | S | ||
| Ciss | Input Capacitance (VDS=-10V, VGS=0V, F=1.0MHz) | 290 | pF | ||
| Coss | Output Capacitance | 60 | pF | ||
| Crss | Reverse Transfer Capacitance | 34 | pF | ||
| Switching Times | td(on) Turn-on Delay Time (VDD=-10V, RL=5, VGS=-4.5V, RGEN=3) | 10 | nS | ||
| tr Turn-on Rise Time | 5.0 | nS | |||
| Switching Times | td(off) Turn-Off Delay Time | 21 | nS | ||
| tf Turn-Off Fall Time | 7 | nS | |||
| Qg | Total Gate Charge (VDS=-10V, ID=-2A, VGS=-4.5V) | 3.0 | nC | ||
| Qgs | Gate-Source Charge | 0.5 | nC | ||
| Qgd | Gate-Drain Charge | 0.8 | nC | ||
| VSD | Diode Forward Voltage (Note 3) (VGS=0V, IS=-2A) | -1.2 | V | ||
| Package Information | |||||
| Device Marking | NTRV4101P | ||||
| Package | SOT-23 | ||||
| Reel Size | 180mm | ||||
| Tape width | 8 mm | ||||
| Quantity | 3000 units | ||||
| SOT-23 Dimensions (Millimeters) | |||||
| Symbol | MIN. | MAX. | |||
| A | 0.900 | 1.150 | |||
| A1 | 0.000 | 0.100 | |||
| A2 | 0.900 | 1.050 | |||
| b | 0.300 | 0.500 | |||
| c | 0.080 | 0.150 | |||
| D | 2.800 | 3.000 | |||
| E | 1.200 | 1.400 | |||
| E1 | 2.250 | 2.550 | |||
| e | 0.950 (TYP) | ||||
| e1 | 1.800 | 2.000 | |||
| L | 0.550 (REF) | ||||
| L1 | 0.300 | 0.500 | |||
| 0 | 8 | ||||
2410121740_Leiditech-NTRV4101P_C3647029.pdf
Related Products
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications
Product OverviewThe BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in lead-free versions. These diodes offer a wide range of Zener voltages ...
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
Surface Mounted Rectifier ZHIDE US3M Series High Voltage 1000V Rectifier for Electronic Circuits
Product OverviewThe US3A-US3M series are surface-mounted high-efficiency rectifiers designed for general-purpose applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding environments. These rectifiers are guaranteed for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
