PNP Transistor LRC LMBT3906N3T5G Suitable for Automotive Applications and Control Requirements
Key Attributes
Model Number:
LMBT3906N3T5G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
250mW
Transition Frequency(fT):
250MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LMBT3906N3T5G
Package:
SOT-883
Product Description
Product Overview
The LMBT3906N3T5G and S-LMBT3906N3T5G are general-purpose PNP silicon transistors designed for automotive and other applications requiring unique site and control change requirements. The S- prefix variants are AEC-Q101 qualified and PPAP capable. These devices are RoHS compliant and Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS, Halogen Free
- Certifications: AEC-Q101 qualified (S- prefix), PPAP capable (S- prefix)
- Device Marking: LMBT3906N3T5G, S-LMBT3906N3T5G
- Package: SOT883
Technical Specifications
| Parameter | Symbol | LMBT3906N3T5G | S-LMBT3906N3T5G | Unit | Min. | Typ. | Max. |
| MAXIMUM RATINGS (Ta = 25C) | |||||||
| CollectorEmitter Voltage | VCEO | -40 | Vdc | ||||
| CollectorBase Voltage | VCBO | -40 | Vdc | ||||
| EmitterBase Voltage | VEBO | -5 | Vdc | ||||
| Collector Current Continuous | IC | -200 | mAdc | ||||
| Total Device Dissipation, FR5 Board | PD | 250 | mW | ||||
| Derate above 25C | 2 | mW/C | |||||
| Thermal Resistance, JunctiontoAmbient | RJA | 500 | C/W | ||||
| Junction and Storage temperature | TJ,Tstg | 55+150 | C | ||||
| OFF CHARACTERISTICS (Ta= 25C) | |||||||
| CollectorEmitter Breakdown Voltage | VBR(CEO) | -40 | V | ||||
| CollectorBase Breakdown Voltage | VBR(CBO) | -40 | V | ||||
| EmitterBase Breakdown Voltage | VBR(EBO) | -5 | V | ||||
| Collector Cutoff Current | ICEX | -50 | nA | ||||
| Base Cutoff Current | IBL | -50 | nA | ||||
| ON CHARACTERISTICS (Note 2.) (Ta= 25C) | |||||||
| DC Current Gain | HFE | 60 | 80 | ||||
| DC Current Gain | HFE | 100 | 300 | ||||
| DC Current Gain | HFE | 60 | |||||
| CollectorEmitter Saturation Voltage | VCE(sat) | -0.25 | V | ||||
| CollectorEmitter Saturation Voltage | VCE(sat) | -0.4 | V | ||||
| CollectorEmitter Saturation Voltage | VCE(sat) | -0.65 | V | ||||
| CollectorEmitter Saturation Voltage | VCE(sat) | -0.85 | V | ||||
| BaseEmitter Saturation Voltage | VBE(sat) | -0.95 | V | ||||
| SMALLSIGNAL CHARACTERISTICS (Ta= 25C) | |||||||
| CurrentGain Bandwidth Product | fT | 250 | MHz | ||||
| Output Capacitance | Cobo | 4.5 | pF | ||||
| Input Capacitance | Cibo | 10 | pF | ||||
| SWITCHING CHARACTERISTICS (Ta= 25C) | |||||||
| Delay Time | td | 35 | ns | ||||
| Rise Time | tr | 35 | ns | ||||
| Storage Time | ts | 225 | ns | ||||
| Fall Time | tf | 75 | ns | ||||
2201121800_LRC-LMBT3906N3T5G_C2936710.pdf
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