battery protection solution Leiditech NTR3A30PZ 20V P Channel MOSFET with low RDS ON and gate charge
Product Overview
The NTR3A30PZ is a 20V P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is well-suited for battery protection and general switching applications, including load switching and uninterruptible power supplies.
Product Attributes
- Brand: Leiditech
- Device Marking: NTR3A30PZ
- Package: SOT-23
- Reel Size: 180mm
- Tape Width: 8 mm
- Quantity per Reel: 3000 units
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TC=25 unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | -20 | V | |||
| VGS | Gate-Source Voltage | 12 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ -4.5V1 | -4.9 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ -4.5V1 | -3.9 | A | |||
| IDM | Pulsed Drain Current2 | -14 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 1.31 | W | |||
| PD@TA=70 | Total Power Dissipation3 | 0.84 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction-Ambient1 | 120 | /W | |||
| RJA | Thermal Resistance Junction-Ambient1 (t 10s) | 95 | /W | |||
| Electrical Characteristics (TJ=25, unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -20 | V | ||
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | -0.014 | V/ | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-4.9A | 32 | 38 | m | |
| VGS=-2.5V , ID=-3.4A | 45 | 55 | m | |||
| VGS=-1.8V , ID=-2A | 65 | 85 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -0.4 | -1.0 | V | |
| VGS(th) | VGS(th) Temperature Coefficient | 3.95 | mV/ | |||
| IDSS | Drain-Source Leakage Current | VDS=-16V , VGS=0V , TJ=25 | -1 | uA | ||
| VDS=-16V , VGS=0V , TJ=55 | -5 | uA | ||||
| IGSS | Gate-Source Leakage Current | VGS=12V , VDS=0V | 100 | nA | ||
| gfs | Forward Transconductance | VDS=-5V , ID=-3A | 12.8 | S | ||
| Qg | Total Gate Charge (-4.5V) | VDS=-15V , VGS=-4.5V , ID=-3A | 10.2 | 14.3 | nC | |
| Qgs | Gate-Source Charge | 1.89 | 2.6 | |||
| Qgd | Gate-Drain Charge | 3.1 | 4.3 | |||
| Td(on) | Turn-On Delay Time | VDD=-10V , VGS=-4.5V , RG=3.3 , ID=-3A | 5.6 | 11.2 | ns | |
| Tr | Rise Time | 40.8 | 73 | |||
| Td(off) | Turn-Off Delay Time | 33.6 | 67 | ns | ||
| Tf | Fall Time | 18 | 36 | |||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | 857 | 1200 | pF | |
| Coss | Output Capacitance | 114 | 160 | |||
| Crss | Reverse Transfer Capacitance | 108 | 151 | |||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | -4.9 | A | ||
| ISM | Pulsed Source Current2,4 | -14 | A | |||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | -1 | V | ||
| trr | Reverse Recovery Time | IF=-3A , di/dt=100A/s , TJ=25 | 21.8 | nS | ||
| Qrr | Reverse Recovery Charge | 6.9 | nC | |||
| Package Mechanical Data - SOT-23 | ||
|---|---|---|
| Symbol | Dimensions in Millimeters | |
| A | MIN. 0.900 | MAX. 1.150 |
| A1 | MIN. 0.000 | MAX. 0.100 |
| A2 | MIN. 0.900 | MAX. 1.050 |
| b | MIN. 0.300 | MAX. 0.500 |
| c | MIN. 0.080 | MAX. 0.150 |
| D | MIN. 2.800 | MAX. 3.000 |
| E | MIN. 1.200 | MAX. 1.400 |
| E1 | MIN. 2.250 | MAX. 2.550 |
| e | TYP. 0.950 | |
| e1 | MIN. 1.800 | MAX. 2.000 |
| L | REF. 0.550 | |
| L1 | MIN. 0.300 | MAX. 0.500 |
| 0 | 8 | |
2409292333_Leiditech-NTR3A30PZ_C3647042.pdf
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