battery protection solution Leiditech NTR3A30PZ 20V P Channel MOSFET with low RDS ON and gate charge

Key Attributes
Model Number: NTR3A30PZ
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.9A
RDS(on):
88mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
151pF@15V
Number:
1 P-Channel
Pd - Power Dissipation:
1.31W
Input Capacitance(Ciss):
1.2nF@15V
Gate Charge(Qg):
14.3nC@4.5V
Mfr. Part #:
NTR3A30PZ
Package:
SOT-23
Product Description

Product Overview

The NTR3A30PZ is a 20V P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is well-suited for battery protection and general switching applications, including load switching and uninterruptible power supplies.

Product Attributes

  • Brand: Leiditech
  • Device Marking: NTR3A30PZ
  • Package: SOT-23
  • Reel Size: 180mm
  • Tape Width: 8 mm
  • Quantity per Reel: 3000 units

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings (TC=25 unless otherwise noted)
VDS Drain-Source Voltage -20 V
VGS Gate-Source Voltage 12 V
ID@TA=25 Continuous Drain Current, VGS @ -4.5V1 -4.9 A
ID@TA=70 Continuous Drain Current, VGS @ -4.5V1 -3.9 A
IDM Pulsed Drain Current2 -14 A
PD@TA=25 Total Power Dissipation3 1.31 W
PD@TA=70 Total Power Dissipation3 0.84 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
RJA Thermal Resistance Junction-Ambient1 120 /W
RJA Thermal Resistance Junction-Ambient1 (t 10s) 95 /W
Electrical Characteristics (TJ=25, unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -20 V
BVDSS/TJ BVDSS Temperature Coefficient Reference to 25 , ID=-1mA -0.014 V/
RDS(ON) Static Drain-Source On-Resistance2 VGS=-4.5V , ID=-4.9A 32 38 m
VGS=-2.5V , ID=-3.4A 45 55 m
VGS=-1.8V , ID=-2A 65 85 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -0.4 -1.0 V
VGS(th) VGS(th) Temperature Coefficient 3.95 mV/
IDSS Drain-Source Leakage Current VDS=-16V , VGS=0V , TJ=25 -1 uA
VDS=-16V , VGS=0V , TJ=55 -5 uA
IGSS Gate-Source Leakage Current VGS=12V , VDS=0V 100 nA
gfs Forward Transconductance VDS=-5V , ID=-3A 12.8 S
Qg Total Gate Charge (-4.5V) VDS=-15V , VGS=-4.5V , ID=-3A 10.2 14.3 nC
Qgs Gate-Source Charge 1.89 2.6
Qgd Gate-Drain Charge 3.1 4.3
Td(on) Turn-On Delay Time VDD=-10V , VGS=-4.5V , RG=3.3 , ID=-3A 5.6 11.2 ns
Tr Rise Time 40.8 73
Td(off) Turn-Off Delay Time 33.6 67 ns
Tf Fall Time 18 36
Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz 857 1200 pF
Coss Output Capacitance 114 160
Crss Reverse Transfer Capacitance 108 151
IS Continuous Source Current1,4 VG=VD=0V , Force Current -4.9 A
ISM Pulsed Source Current2,4 -14 A
VSD Diode Forward Voltage2 VGS=0V , IS=-1A , TJ=25 -1 V
trr Reverse Recovery Time IF=-3A , di/dt=100A/s , TJ=25 21.8 nS
Qrr Reverse Recovery Charge 6.9 nC
Package Mechanical Data - SOT-23
Symbol Dimensions in Millimeters
A MIN. 0.900 MAX. 1.150
A1 MIN. 0.000 MAX. 0.100
A2 MIN. 0.900 MAX. 1.050
b MIN. 0.300 MAX. 0.500
c MIN. 0.080 MAX. 0.150
D MIN. 2.800 MAX. 3.000
E MIN. 1.200 MAX. 1.400
E1 MIN. 2.250 MAX. 2.550
e TYP. 0.950
e1 MIN. 1.800 MAX. 2.000
L REF. 0.550
L1 MIN. 0.300 MAX. 0.500
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