High voltage IPM module LINKOSEMI LKS1D5004D designed for brushless DC and synchronous motor control
Key Attributes
Model Number:
LKS1D5004D
Product Custom Attributes
Mfr. Part #:
LKS1D5004D
Package:
ESOP-13
Product Description
Product Overview
The LKS1D5004D is a high-voltage single-phase IPM (Intelligent Power Module) integrating a high-voltage IC and high-performance MOSFETs. It is suitable for Brushless DC (BLDC) and Permanent Magnet Synchronous (PMSM) motors. The source of the low-side MOSFET can be used for current sampling. The input includes a Schmitt trigger and is compatible with 3.3V/5V/15V logic levels. The LKS1D5004D is housed in an ESOP13 package.
Product Attributes
- Brand: BPSemi (implied by www.bpsemi.com)
- Origin: China (implied by www.lksmcu.com and Chinese text)
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Conditions | Min | Typical | Max | Unit |
| Absolute Maximum Ratings (Note 1) (Unless otherwise specified, TA=25) | |||||
| VCC | Control Supply Voltage (VCC and COM terminals) | 20 | V | ||
| VBS | High-side Bias Voltage (VB and VS terminals) | 20 | V | ||
| VIN | Input Signal Voltage (VIN and COM terminals) | -0.3 | VCC+0.3 | V | |
| VDSS | Drain-Source Voltage (IDSS = 250uA) | 500 | V | ||
| ID | Continuous Operating Current (Note 2) (TC=25) | 4 | A | ||
| ID | Continuous Operating Current (Note 2) (TC=100) | TBD | A | ||
| TJ | Operating Junction Temperature | -40 | 150 | ||
| TSTG | Storage Temperature | -40 | 125 | ||
| Recommended Operating Conditions (Note 3) (Unless otherwise specified, TA=25) | |||||
| VPN | Power Stage Supply Voltage (between P and N terminals) | 300 | 400 | V | |
| VCC | Control Supply Voltage (VCC and COM terminals) | 12.0 | 15.0 | 18.0 | V |
| VBS | High-side Bias Voltage (VB and VS terminals) | 12.0 | 15.0 | 18.0 | V |
| VIN(ON) | Input Turn-on Voltage Threshold (VIN and COM terminals) | 3.0 | VCC | V | |
| VIN(OFF) | Input Turn-off Voltage Threshold (VIN and COM terminals) | 0 | 0.4 | V | |
| TDEAD | Dead Time to Prevent Bridge Shoot-through (VCC = VBS = 12.0 ~ 18.0V, TJ <150C) | 1.0 | us | ||
| FPWM | PWM Switching Frequency (TJ <150C) | 20 | KHz | ||
| Electrical Characteristics (Note 5) (Unless otherwise specified, TA=25) | |||||
| BVDSS | MOSFET Drain-Source Breakdown Voltage (VIN = 0 V, ID = 250 uA) | 500 | V | ||
| IDSS | MOSFET Cut-off Drain Current (VIN = 0 V, VDS = 500 V) | 1 | uA | ||
| VSD | Body Diode Forward Voltage (VCC = VBS = 15V, VIN = 0 V, ID = -4 A) | 1.4 | V | ||
| RDS(ON) | MOSFET On-Resistance (VCC = VBS = 15 V, VIN = 5 V, ID =0.5A) | 2.4 | ohm | ||
| TON | Switching Time (Inductive Load L = 2.8 mH, VPN =400 V, VCC = VBS = 15 V, ID = 4A, VIN = 0~5 V) | 590 | ns | ||
| TOFF | Switching Time (Inductive Load L = 2.8 mH, VPN =400 V, VCC = VBS = 15 V, ID = 4A, VIN = 0~5 V) | 205 | ns | ||
| IQCC | Quiescent VCC Supply Current (VCC = 15V, VIN = 0V) | 50 | uA | ||
| IQB | Quiescent VBS Supply Current (VBS = 15V, VIN = 0V) | 35 | uA | ||
| VCC_ON | VCC Undervoltage Protection (Rising Edge) | 8.5 | V | ||
| VBS_ON | VBS Undervoltage Protection (Rising Edge) | 8.7 | V | ||
| VCC_UVLO | VCC Undervoltage Protection (Falling Edge) | 7.6 | V | ||
| VBS_UVLO | VBS Undervoltage Protection (Falling Edge) | 7.8 | V | ||
| VIH | Turn-on Voltage Threshold (Logic High Level) | 2.4 | V | ||
| VIL | Turn-off Voltage Threshold (Logic Low Level) | 0.6 | V | ||
| VFB | Bootstrap Diode Forward Voltage (IF = 0.8A) | 1.65 | V | ||
| TRRB | Bootstrap Diode Reverse Recovery Time (IF = 0.5A) | 40 | ns | ||
2402210951_LINKOSEMI-LKS1D5004D_C20618097.pdf
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