Lewa Micro LWS60110A23 SOT 223 Package P Channel Power MOSFET with Low Gate Charge and ROHS Compliance
Key Attributes
Model Number:
LWS60110A23
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
4A
RDS(on):
150mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
2.98pF
Input Capacitance(Ciss):
315pF
Output Capacitance(Coss):
59pF
Pd - Power Dissipation:
3W
Gate Charge(Qg):
6.01nC@10V
Mfr. Part #:
LWS60110A23
Package:
SOT-223
Product Description
LWS60110A23 LW Silicon P-Channel Power MOSFET
The LWS60110A23 is a Silicon P-Channel Power MOSFET utilizing SGT technology. It is designed to offer excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications. The device features fast switching, low gate charge, low RDS(ON), and low reverse transfer capacitances. It is packaged in a SOT-223 form factor, complying with ROHS and Halogen Free standards. This MOSFET is ideal for power management and portable equipment applications.
Product Attributes
- Brand: LW
- Material: Silicon
- Package: SOT-223
- Certifications: ROHS, Halogen Free
Technical Specifications
| Parameter | Symbol | Value | Units | Test Conditions |
| General Electrical Characteristics | ||||
| Drain-to-Source Voltage | VDSS | -60 | V | VGS=0V, ID=-250A |
| Gate-to-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | ID | -4.0 | A | TC=25°C |
| Continuous Drain Current | ID | -3.0 | A | TC=100°C |
| Pulsed Drain Current | IDM | -16 | A | a1 |
| Drain-to-Source On-Resistance | RDS(ON)1 | 59 | mΩ | VGS=-10V, ID=-3.0A, TC=25°C |
| Drain-to-Source On-Resistance | RDS(ON)2 | 90 | mΩ | VGS=-10V, ID=-3.0A, TC=100°C |
| Gate Threshold Voltage | VGS(TH) | -1.6 | V | VDS=VGS, ID=-250µA |
| Drain to Source Leakage Current | IDSS | -1.2 | µA | VDS=-60V, VGS=0V |
| Gate to Source Forward Leakage | IGSS(F) | -100 | nA | VGS=+20V, VDS=0V |
| Gate to Source Reverse Leakage | IGSS(R) | -100 | nA | VGS=-20V, VDS=0V |
| Source-Drain Diode Characteristics | ||||
| Diode Forward Voltage | VSD | -1.2 | V | IS=-4.0A, VGS=0V |
| Diode Forward Current | IS | -4.0 | A | |
| Dynamic Characteristics | ||||
| Input Capacitance | Ciss | 315 | pF | VDS=-30V, VGS=-10V, f=1.0MHz |
| Reverse Transfer Capacitance | Crss | 59 | pF | |
| Output Capacitance | Coss | 110 | pF | |
| Total Gate Charge | Qg | 6.01 | nC | VDS=-30V, ID=-5.0A, VGS=-10V |
| Gate Source Charge | Qgs | 1.27 | nC | VDS=-30V, ID=-5.0A, VGS=-10V |
| Gate Drain Charge | Qgd | 0.72 | nC | VDS=-30V, ID=-5.0A, VGS=-10V |
| Turn-on Delay Time | td(ON) | 8.0 | ns | VGS=-10V, ID=-2.0A, VDS=-30V, RG=5.0Ω |
| Rise Time | tr | 6.8 | ns | VGS=-10V, ID=-2.0A, VDS=-30V, RG=5.0Ω |
| Turn-Off Delay Time | td(OFF) | 16 | ns | VGS=-10V, ID=-2.0A, VDS=-30V, RG=5.0Ω |
| Fall Time | tf | 4.0 | ns | VGS=-10V, ID=-2.0A, VDS=-30V, RG=5.0Ω |
| Thermal Characteristics | ||||
| Thermal Resistance, Junction-to-Ambient | RθJA | 41.6 | °C/W | |
| Maximum Temperature for Soldering | TL | 260 | °C | |
| Power Dissipation | PD | 3.0 | W | TC=25°C |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 to 150 | °C | |
2409271733_Lewa-Micro-LWS60110A23_C20630396.pdf
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