P Channel Enhancement Mode TrenchPTM Power MOSFET IXTA96P085T TRL with Avalanche Rating and Low RDS
Key Attributes
Model Number:
IXTA96P085T-TRL
Product Custom Attributes
Drain To Source Voltage:
85V
Current - Continuous Drain(Id):
96A
Operating Temperature -:
-55℃~+150℃
RDS(on):
13mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
460pF
Output Capacitance(Coss):
1.175nF
Input Capacitance(Ciss):
13.1nF
Pd - Power Dissipation:
298W
Gate Charge(Qg):
180nC@10V
Mfr. Part #:
IXTA96P085T-TRL
Package:
TO-263AA
Product Description
Product Overview
The IXTA96P085T, IXTP96P085T, and IXTH96P085T are P-Channel Enhancement Mode TrenchPTM Power MOSFETs from IXYS, designed for high-performance applications. They feature an avalanche rating, extended FBSOA, fast intrinsic diode, and low RDS(ON) and QG, offering advantages like easy mounting, space savings, and high power density. These MOSFETs are suitable for high-side switching, push-pull amplifiers, DC choppers, automatic test equipment, current regulators, and battery charger applications.
Product Attributes
- Brand: IXYS
- Origin: USA (implied by US patents)
- Material: Semiconductor (implied)
- Certifications: Not explicitly mentioned, but covered by multiple US patents.
Technical Specifications
| Symbol | Test Conditions | IXTA96P085T / IXTP96P085T / IXTH96P085T | Unit |
|---|---|---|---|
| VDSS | TJ = 25C to 150C | -85 | V |
| VDGR | TJ = 25C to 150C, RGS = 1M | -85 | V |
| VGSS | Continuous | 15 | V |
| VGSM | Transient | 25 | V |
| ID25 | TC = 25C | -96 | A |
| IDM | TC = 25C, Pulse Width Limited by TJM | -300 | A |
| IA | TC = 25C | -48 | A |
| EAS | TC = 25C | 1 | J |
| PD | TC = 25C | 298 | W |
| TJ | -55 ... +150 | C | |
| TJM | 150 | C | |
| Tstg | -55 ... +150 | C | |
| TL | 1.6mm (0.062 in.) from Case for 10s | 300 | C |
| TSOLD | Plastic Body for 10s | 260 | C |
| Md | Mounting Torque (TO-220 & TO-247) | 1.13/10 | Nm/lb.in. |
| Weight | TO-263 | 2.5 | g |
| Weight | TO-220 | 3.0 | g |
| Weight | TO-247 | 6.0 | g |
| BVDSS | VGS = 0V, ID = - 250A | -85 | V |
| VGS(th) | VDS = VGS, ID = - 250A | -2.0 ... -4.0 | V |
| IGSS | VGS = 15V, VDS = 0V | 100 | nA |
| IDSS | VDS = VDSS, VGS = 0V | -10 | A |
| IDSS | TJ = 125C | -750 | A |
| RDS(on) | VGS = -10V, ID = 0.5 ID25, Note 1 | 13 | m |
| gfs | VDS = -10V, ID = 0.5 ID25, Note 1 | 40 ... 66 | S |
| Ciss | VGS = 0V, VDS = - 25V, f = 1MHz | 1310 | pF |
| Coss | VGS = 0V, VDS = - 25V, f = 1MHz | 1175 | pF |
| Crss | VGS = 0V, VDS = - 25V, f = 1MHz | 460 | pF |
| td(on) | Resistive Switching Times, RG = 1 | 23 | ns |
| tr | Resistive Switching Times, RG = 1 | 34 | ns |
| td(off) | Resistive Switching Times, RG = 1 | 45 | ns |
| tf | Resistive Switching Times, RG = 1 | 22 | ns |
| Qg(on) | VGS = -10V, VDS = 0.5 VDSS, ID = 0.5 ID25 | 180 | nC |
| Qgs | VGS = -10V, VDS = 0.5 VDSS, ID = 0.5 ID25 | 52 | nC |
| Qgd | VGS = -10V, VDS = 0.5 VDSS, ID = 0.5 ID25 | 62 | nC |
| RthJC | - | 0.42 | C/W |
| RthCS | TO-220 | 0.50 | C/W |
| RthCS | TO-247 | 0.21 | C/W |
| IS | Source-Drain Diode, VGS = 0V | -96 | A |
| ISM | Source-Drain Diode, Repetitive, Pulse Width Limited by TJM | -394 | A |
| VSD | Source-Drain Diode, IF = - 48A, VGS = 0V, Note 1 | -1.3 | V |
| trr | Source-Drain Diode | 55 | ns |
| QRM | Source-Drain Diode | 100 | nC |
| IRM | Source-Drain Diode | -3.6 | A |
2410121317_Littelfuse-IXTA96P085T-TRL_C6280784.pdf
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