Avalanche Rated Rugged Power MOSFET Littelfuse IXTT20P50P Featuring PolarPTM Process and TO 268 Package
Key Attributes
Model Number:
IXTT20P50P
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
20A
Gate Threshold Voltage (Vgs(th)):
2V
Pd - Power Dissipation:
460W
Mfr. Part #:
IXTT20P50P
Package:
TO-268AA
Product Description
Product Overview
The IXTT20P50P and IXTH20P50P are Avalanche Rated, Rugged PolarPTM Power MOSFETs from IXYS, designed for high-side switching, push-pull amplifiers, DC choppers, automatic test equipment, and current regulators. They offer advantages such as easy mounting, space savings, and high power density, featuring international standard packages and low package inductance with a fast intrinsic diode.
Product Attributes
- Brand: IXYS
- Process: PolarPTM
- Features: Avalanche Rated, Rugged, Low Package Inductance, Fast Intrinsic Diode
- Packages: TO-268, TO-247
- Origin: USA (implied by patent numbers and copyright)
Technical Specifications
| Model | VDSS (V) | ID25 (A) | RDS(on) (m) | Package |
| IXTT20P50P | -500 | -20 | 450 | TO-268 |
| IXTH20P50P | -500 | -20 | 450 | TO-247 |
| Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | VGS = 0V, ID = - 250 A | -500 | V | ||
| VGS(th) | VDS = VGS, ID = - 250A | -2.0 | -4.5 | V | |
| IGSS | VGS = 20V, VDS = 0V | 100 | nA | ||
| IDSS | VDS = VDSS, VGS = 0V | -25 | A | ||
| IDSS | TJ = 125C | -200 | A | ||
| RDS(on) | VGS = -10V, ID = 0.5 ID25, Note 1 | 450 | m | ||
| gfs | VDS = -10V, ID = 0.5 ID25, Note 1 | 11 | 18 | S | |
| Ciss | VGS = 0V, VDS = - 25V, f = 1MHz | 5120 | pF | ||
| Coss | VGS = 0V, VDS = - 25V, f = 1MHz | 525 | pF | ||
| Crss | VGS = 0V, VDS = - 25V, f = 1MHz | 75 | pF | ||
| td(on) | Resistive Switching Times VGS = -10V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 3 (External) | 26 | ns | ||
| tr | Resistive Switching Times VGS = -10V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 3 (External) | 32 | ns | ||
| td(off) | Resistive Switching Times VGS = -10V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 3 (External) | 80 | ns | ||
| tf | Resistive Switching Times VGS = -10V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 3 (External) | 34 | ns | ||
| Qg(on) | VGS = -10V, VDS = 0.5 VDSS, ID = 0.5 ID25 | 103 | nC | ||
| Qgs | VGS = -10V, VDS = 0.5 VDSS, ID = 0.5 ID25 | 28 | nC | ||
| Qgd | VGS = -10V, VDS = 0.5 VDSS, ID = 0.5 ID25 | 38 | nC | ||
| RthJC | 0.27 | C/W | |||
| RthCS | 0.21 | C/W | |||
| IS | Source-Drain Diode | -20 | A | ||
| ISM | Source-Drain Diode Repetitive, Pulse Width Limited by TJM | -80 | A | ||
| VSD | Source-Drain Diode IF = -10A, VGS = 0V, Note 1 | -2.8 | V | ||
| trr | Source-Drain Diode IF = -10A, -di/dt = -150A/s VR = -100V, VGS = 0V | 406 | ns | ||
| QRM | Source-Drain Diode IF = -10A, -di/dt = -150A/s VR = -100V, VGS = 0V | 8.93 | C | ||
| IRM | Source-Drain Diode IF = -10A, -di/dt = -150A/s VR = -100V, VGS = 0V | -44 | A |
| Parameter | Test Conditions | Value | Unit |
| VDSS | TJ = 25C to 150C | -500 | V |
| VDGR | TJ = 25C to 150C, RGS = 1M | -500 | V |
| VGSS | Continuous | 20 | V |
| VGSM | Transient | 30 | V |
| ID25 | TC = 25C | -20 | A |
| IDM | TC = 25C, Pulse Width Limited by TJM | -60 | A |
| IA | TC = 25C | -20 | A |
| EAS | TC = 25C | 2.5 | J |
| dv/dt | IS IDM, VDD VDSS, TJ 150C | 10 | V/ns |
| PD | TC = 25C | 460 | W |
| TJ | -55 ... +150 | C | |
| TJM | 150 | C | |
| Tstg | -55 ... +150 | C | |
| TL | Maximum Lead Temperature for Soldering | 300 | C |
| TSOLD | 1.6 mm (0.062in.) from Case for 10s | 260 | C |
| Md | Mounting Torque (TO-247) | 1.13 / 10 | Nm/lb.in. |
| Weight | TO-268 | 4 | g |
| Weight | TO-247 | 6 | g |
2411200047_Littelfuse-IXTT20P50P_C5658388.pdf
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