86--136 6733 2386
quality N Channel Enhancement Mode Power MOSFET Littelfuse IXTP34N65X2 Avalanche Rated X2 Class Device factory
quality N Channel Enhancement Mode Power MOSFET Littelfuse IXTP34N65X2 Avalanche Rated X2 Class Device factory
quality N Channel Enhancement Mode Power MOSFET Littelfuse IXTP34N65X2 Avalanche Rated X2 Class Device factory

N Channel Enhancement Mode Power MOSFET Littelfuse IXTP34N65X2 Avalanche Rated X2 Class Device

Key Attributes
Model Number: IXTP34N65X2
Product Custom Attributes
Mfr. Part #:
IXTP34N65X2
Package:
TO-220-3
Product Description

IXTP34N65X2 / IXTH34N65X2 N-Channel Enhancement Mode Power MOSFET

This X2-Class Power MOSFET series, featuring the IXTP34N65X2 and IXTH34N65X2 models, offers international standard packages with low RDS(ON) and low gate charge (QG). Designed for high power density, these devices are avalanche rated and boast low package inductance, making them easy to mount and space-saving. They are ideal for applications such as switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics and servo controls.

Product Attributes

  • Brand: IXYS (Littelfuse)
  • Product Type: N-Channel Enhancement Mode, Avalanche Rated X2-Class Power MOSFET
  • Package Types: TO-220 (IXTP), TO-247 (IXTH)
  • Certifications: Covered by one or more U.S. patents (listed in source)
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified

Technical Specifications

Symbol Test Conditions Characteristic Values (TJ = 25C, Unless Otherwise Specified) Min. Typ. Max. Units
BVDSS VGS = 0V, ID = 1mA 650 V
TJ = 25C to 150C 650 V
VGS(th) VDS = VGS, ID = 250A 3.0 5.0 V
IGSS VGS = 30V, VDS = 0V 100 nA
IDSS VDS = VDSS, VGS = 0V 10 A
TJ = 125C 150 A
RDS(on) VGS = 10V, ID = 0.5 ID25, Note 1 96 m
VDGR TJ = 25C to 150C, RGS = 1M 650 V
VGSS Continuous 30 V
VGSM Transient 40 V
ID25 TC = 25C 34 A
IDM TC = 25C, Pulse Width Limited by TJM 68 A
IA TC = 25C 17 A
EAS TC = 25C 1 J
dv/dt IS IDM, VDD VDSS, TJ 150C 15 V/ns
PD TC = 25C 540 W
TJ -55 +150 C
TJM 150 C
Tstg -55 +150 C
TL Maximum Lead Temperature for Soldering 300 C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 C
Md Mounting Torque 1.13 Nm/lb.in
Weight TO-220 3 g
Weight TO-247 6 g
IS VGS = 0V 34 A
ISM Repetitive, pulse Width Limited by TJM 136 A
VSD IF = IS, VGS = 0V, Note 1 1.4 V
trr IF = 17A, -di/dt = 100A/s, VR = 100V 390 ns
QRM 4.2 C
IRM 21.8 A
gfs VDS = 10V, ID = 0.5 ID25, Note 1 20 33 S
RGi 0.90
Ciss VGS = 0V, VDS = 25V, f = 1MHz 3000 pF
Coss 2180 pF
Crss 1.7 pF
Co(er) VGS = 0V, VDS = 0.8 VDSS 125 pF
Co(tr) 490 pF
td(on) VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25, RG = 10 (External) 30 ns
tr 48 ns
td(off) 68 ns
tf 30 ns
Qg(on) VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25 54 nC
Qgs 15 nC
Qgd 20 nC
RthJC 0.23 C/W
RthCS TO-220 0.50 C/W
RthCS TO-247 0.21 C/W

2411220132_Littelfuse-IXTP34N65X2_C7291023.pdf

Related Products
quality NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component factory
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
quality Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor factory
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
quality Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating factory
Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating
Product OverviewThe DTC123YUA is a digital transistor with built-in resistors, designed for surface mount applications. It simplifies circuit configuration by eliminating the need for external input resistors, making it ideal for inverter circuits. The epoxy meets UL-94 V-0 flammability rating and ...
quality Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design factory
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.