High voltage transistor LRC LMBTA42LT1G in SOT23 package providing performance for electronic circuits
Key Attributes
Model Number:
LMBTA42LT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
50MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
300V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LMBTA42LT1G
Package:
SOT-23
Product Description
Product Overview
The LMBTA42LT1G and LMBTA43LT1G are high-voltage transistors from LESHAN RADIO COMPANY, LTD., designed for SOT-23 surface-mount applications. These transistors offer robust performance with high breakdown voltages, making them suitable for various electronic circuits requiring voltage amplification and switching.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Package: SOT-23
- Compliance: RoHS requirements
- Prefix 'S-' available for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
Technical Specifications
| Characteristic | Symbol | LMBTA42 | LMBTA43 | Unit | Notes | |
| MAXIMUM RATINGS | ||||||
| CollectorEmitter Voltage | V CEO | 300 | 200 | Vdc | ||
| CollectorBase Voltage | V CBO | 300 | 200 | Vdc | ||
| EmitterBase Voltage | V EBO | 6.0 | 6.0 | Vdc | ||
| Collector Current Continuous | I C | 500 | 500 | mAdc | ||
| Total Device Dissipation (FR 5 Board) | P D | 225 | 225 | mW | TA = 25C, Derate above 25C 1.8 mW/C | |
| Thermal Resistance, Junction to Ambient (FR 5 Board) | R JA | 556 | 556 | C/W | (1) FR5 = 1.0 x 0.75 x 0.062 in. | |
| Total Device Dissipation (Alumina Substrate) | P D | 300 | 300 | mW | TA = 25C, Derate above 25C 2.4 mW/C | |
| Thermal Resistance, Junction to Ambient (Alumina Substrate) | R JA | 417 | 417 | C/W | (2) Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. | |
| Junction and Storage Temperature | T J , T stg | 55 to +150 | C | |||
| ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) | ||||||
| CollectorEmitter Breakdown Voltage | V (BR)CEO | 300 | 200 | Vdc | (I C = 1.0 mAdc, I B = 0) (3) | |
| CollectorBase Breakdown Voltage | V (BR)CBO | 300 | 200 | Vdc | (I C= 100 Adc, I E= 0) | |
| EmitterBase Breakdown Voltage | V (BR)EBO | 6.0 | Vdc | (I E= 100 Adc, I C= 0) | ||
| Collector Cutoff Current | I CBO | 0.1 | Adc | ( V CB= 200Vdc, I E= 0) LMBTA42; ( V CB= 160Vdc, I E= 0) LMBTA43 | ||
| Emitter Cutoff Current | I EBO | 0.1 | Adc | ( V EB= 6.0Vdc, I C= 0) LMBTA42; ( V EB= 4.0Vdc, I C= 0) LMBTA43 | ||
| ON CHARACTERISTICS (3) | ||||||
| DC Current Gain | hFE | 25 | 40 | (I C = 1.0 mAdc, V CE = 10 Vdc) Both Types; (I C = 10 mAdc, V CE = 10 Vdc) Both Types; (I C = 30 mAdc, V CE = 10 Vdc) LMBTA42 40 LMBTA43 40 | ||
| CollectorEmitter Saturation Voltage | VCE(sat) | 0.5 | Vdc | (I C = 20 mAdc, I B = 2.0 mAdc) | ||
| BaseEmitter Saturation Voltage | V BE(sat) | 0.9 | Vdc | (I C = 20 mAdc, I B= 2.0 mAdc) | ||
| SMALLSIGNAL CHARACTERISTICS | ||||||
| Current GainBandwidth Product | fT | 50 | MHz | (V CE = 20 Vdc, I C = 10mA, f = 100 MHz) | ||
| Collector Base Capacitance | C cb | 3.0 | 4.0 | pF | (V CB= 20 Vdc, I E= 0, f = 1.0 MHz) | |
| DEVICE MARKING AND ORDERING INFORMATION | ||||||
| Device Marking | 1D | M1E | ||||
| Package | SOT-23 | |||||
| Shipping | 3000/Tape&Reel | 10000/Tape&Reel | ||||
| Part Number | LMBTA42LT1G | LMBTA43LT1G | ||||
| Part Number | LMBTA42LT3G | LMBTA43LT3G | ||||
| Note: (3) Pulse Test: Pulse Width <300 s, Duty Cycle <2.0%. | ||||||
2409300133_LRC-LMBTA42LT1G_C78717.pdf
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