High current NPN transistor LRC S-LBTN180Y3T1G ideal for power management and amplifier applications
Key Attributes
Model Number:
S-LBTN180Y3T1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
10uA
Pd - Power Dissipation:
550mW
Transition Frequency(fT):
180MHz
Type:
NPN
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
80V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
S-LBTN180Y3T1G
Package:
SOT-89
Product Description
Product Overview
The LBTN180Y3T1G and S-LBTN180Y3T1G are NPN power transistors designed for high current and high power dissipation applications. They offer robust performance with features like AEC-Q101 qualification and PPAP capability for the 'S-' prefix variants, making them suitable for automotive and other demanding applications. These transistors are ideal for use in linear voltage regulators, low-side switches, battery-driven devices, power management circuits, MOSFET drivers, and amplifiers.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS requirements and Halogen Free
- Certifications: AEC-Q101 qualified (S- prefix variants)
- PPAP Capable (S- prefix variants)
Technical Specifications
| Parameter | Symbol | LBTN180Y3T1G / S-LBTN180Y3T1G | Unit |
|---|---|---|---|
| MAXIMUM RATINGS | |||
| CollectorEmitter Voltage | VCEO | 80 | V |
| CollectorBase Voltage | VCBO | 100 | V |
| EmitterBase Voltage | VEBO | 5 | V |
| Collector Current | IC | 1 | A |
| Peak collector current (tp 1 ms) | ICM | 2 | A |
| Base current | IB | 0.3 | A |
| Peak base current (tp 1 ms) | IBM | 0.3 | A |
| THERMAL CHARACTERISTICS | |||
| Total Device Dissipation, FR4 Board (@ TA = 25C) | PD | 550 | mW |
| Derate above 25C | 225 | mW/C | |
| Thermal Resistance, JunctiontoAmbient | RJA | 4.4 | C/W |
| JunctiontoCase | RJC | 50 | C/W |
| Junction and Storage temperature | TJ,Tstg | -65+150 | C |
| ELECTRICAL CHARACTERISTICS | |||
| Collector Cutoff Current (VCB = 30 V,IE = 0 A) | ICBO | - | 100 nA |
| Collector Cutoff Current (VCB = 30 V,IE = 0 A,Tj = 150) | ICBO | - | 100 nA |
| Emitter Cut-off Current (VEB =5V, IC =0) | IEBO | - | 100 nA |
| CollectorEmitter Breakdown Voltage (IC = 1 mA,IB = 0) | VBR(CEO) | 80 | V |
| CollectorBase Breakdown Voltage (IC = 100 A,IE = 0) | VBR(CBO) | 100 | V |
| EmitterBase Breakdown Voltage (IE = 100 A,IC = 0) | VBR(EBO) | 5 | V |
| Collector-Emitter cutoff Current (VCE= 80V,IB=0) | ICEO | - | 10 A |
| DC Current Gain (VCE = 2 V,IC = 5 mA) | HFE | 100 | |
| DC Current Gain (VCE = 2 V,IC = 150 mA) | 180 | ||
| DC Current Gain (VCE = 2 V,IC = 500 mA) | 45 | ||
| CollectorEmitter Saturation Voltage (IC = 500 mA,IB = 50 mA) | VCE(sat) | - | 0.5 V |
| Base-Emitter voltage (VCE = 2 V, IC = 500 mA) | VBE | - | 1 V |
| Transition Frequency (VCE = 5 V,IC = 50 mA,f = 100 MHz) | fT | 100 | MHz |
| Collector Capacitance (VCB = 10 V,IE = ie = 0 A,f = 1 MHz) | Cc | - | 6 pF |
2410010403_LRC-S-LBTN180Y3T1G_C5185757.pdf
Related Products
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
