N channel depletion mode FET transistor 800V Littelfuse CPC3980ZTR with robust vertical DMOS process
Key Attributes
Model Number:
CPC3980ZTR
Product Custom Attributes
Drain To Source Voltage:
800V
Current - Continuous Drain(Id):
100mA
RDS(on):
45Ω@0V,100mA
Operating Temperature -:
-55℃~+125℃
Gate Threshold Voltage (Vgs(th)):
1.4V
Reverse Transfer Capacitance (Crss@Vds):
3pF
Input Capacitance(Ciss):
115pF@3.5V
Pd - Power Dissipation:
1.8W
Mfr. Part #:
CPC3980ZTR
Package:
SOT-223
Product Description
Product Overview
The CPC3980 is an 800V, N-channel, depletion-mode, Field Effect Transistor (FET) utilizing IXYS Integrated Circuits Divisions proprietary vertical DMOS process. This robust device offers high input impedance and world-class high voltage MOSFET performance with an economical silicon gate architecture. Its FET structure prevents thermal runaway and thermal-induced secondary breakdown, making it ideal for high-power applications. The CPC3980 is a highly reliable FET device extensively used in IXYS Integrated Circuits Divisions Solid State Relays for industrial and telecommunications applications. It is available in the SOT-223 package.
Product Attributes
- Brand: IXYS Integrated Circuits Division
- Package: SOT-223
- Moisture Sensitivity Level (MSL): MSL 1
- ESD Sensitivity: ESD Sensitive (JESD-625)
- Reflow Profile: 260C for 30 seconds (per J-STD-020)
- Recommended Flux: No-clean formulations
- Prohibited Solvents/Fluxes: Chlorine-based or Fluorine-based solvents or fluxes
- Prohibited Cleaning Methods: Ultrasonic energy
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Units |
| Drain-to-Source Breakdown Voltage | BVDSX | VGS= -5.5V, ID=100A | 800 | - | - | V |
| Gate-to-Source Off Voltage | VGS(off) | VDS= 15V, ID=1A | -1.4 | - | -3.1 | V |
| Change in VGS(off) with Temperature | dVGS(off) /dT | VDS= 15V, ID=1A | - | - | 4.5 | mV/C |
| Gate Body Leakage Current | IGSS | VGS=15V, VDS=0V | - | - | 100 | nA |
| Drain-to-Source Leakage Current | ID(off) | VGS= -5.5V, VDS=800V | - | - | 1 A | - |
| Saturated Drain-to-Source Current | IDSS | VGS= 0V, VDS=15V | 100 | - | - | mA |
| Static Drain-to-Source On-State Resistance | RDS(on) | VGS= 0V, ID=100mA, VDS=10V | - | - | 45 | |
| Change in RDS(on) with Temperature | dRDS(on) /dT | - | - | - | 2.5 | %/C |
| Forward Transconductance | Gfs | ID= 50mA, VDS = 10V | 100 | - | - | mS |
| Input Capacitance | CISS | VGS= -3.5V, VDS= 25V, f= 1MHz | - | 115 | - | pF |
| Common Source Output Capacitance | COSS | - | - | 5 | - | pF |
| Reverse Transfer Capacitance | CRSS | - | - | 3 | - | pF |
| Source-Drain Diode Voltage Drop | VSD | VGS= -5V, ISD=150mA | - | 0.72 | 1 | V |
| Thermal Resistance Junction to Ambient | JA | - | - | 55 | - | C/W |
| Thermal Resistance Junction to Case | JC | - | - | 23 | - | C/W |
Absolute Maximum Ratings
| Parameter | Ratings | Units |
| Drain-to-Source Voltage | 800 | V |
| Gate-to-Source Voltage | 15 | V |
| Pulsed Drain Current | 150 | mA |
| Total Package Dissipation | 1.8 | W |
| Operational Temperature | -55 to +125 | C |
| Junction Temperature, Maximum | +125 | C |
| Storage Temperature | -55 to +125 | C |
2410121947_Littelfuse-CPC3980ZTR_C5373317.pdf
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