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quality logic level IGBT Littelfuse NGD18N40ACLBT4G with integrated ESD and over voltage clamped protection factory
quality logic level IGBT Littelfuse NGD18N40ACLBT4G with integrated ESD and over voltage clamped protection factory

logic level IGBT Littelfuse NGD18N40ACLBT4G with integrated ESD and over voltage clamped protection

Key Attributes
Model Number: NGD18N40ACLBT4G
Product Custom Attributes
Mfr. Part #:
NGD18N40ACLBT4G
Package:
DPAK
Product Description

Product Overview

The NGD18N40ACLB is a Logic Level Insulated Gate Bipolar Transistor (IGBT) designed for inductive coil driver applications. It features monolithic circuitry with integrated ESD and Over-Voltage clamped protection, making it ideal for ignition, direct fuel injection, and other high-voltage, high-current switching requirements. The DPAK package offers a smaller footprint for increased board space.

Product Attributes

  • Brand: Littelfuse, Inc.
  • Package: DPAK
  • Material: PbFree Devices
  • Certifications: None explicitly stated
  • Origin: None explicitly stated

Technical Specifications

RatingSymbolValueUnitConditions
CollectorEmitter VoltageVCES430VDC
VCER430VDC
VCE(on)≤ 2.0V@ IC = 10 A, VGE ≥ 4.5 V
Collector CurrentContinuousIC15ADC@ TC = 25°C
50AAC Pulsed
GateEmitter VoltageVGE18VDC
Total Power DissipationPD115W@ TC = 25°C
Derate above 25°C0.77W/°C
Operating and Storage Temperature RangeTJ, Tstg-55 to +175°C
Thermal Resistance, Junction to CaseRθJC1.3°C/W
Thermal Resistance, Junction to Ambient (DPAK, Note 1)RθJA95°C/W
Maximum Lead Temperature for SolderingTL275°C1/8 from case for 5 seconds
Single Pulse CollectortoEmitter Avalanche EnergyEAS400mJVCC = 50 V, VGE = 5.0 V, Pk IL = 21.1 A, L = 1.8 mH, Starting TJ = 25°C
Reverse Avalanche EnergyEAS(R)2000mJVCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C
Short Circuit Withstand Time 1tsc1750µs(See Figure 17, 3 Pulses with 10 ms Period)
Short Circuit Withstand Time 2tsc25.0ms(See Figure 18, 3 Pulses with 10 ms Period)
CollectorEmitter Clamp VoltageBVCES380-420VDCIC = 2.0 mA, TJ = −40°C to 150°C
Zero Gate Voltage Collector CurrentICES-2.0 to 20µADCVCE = 350 V, VGE = 0 V, TJ = 25°C
Reverse CollectorEmitter Leakage CurrentIECS-0.7 to 1.0mAVCE = −24 V, TJ = 25°C
GateEmitter Clamp VoltageBVGES11-15VDCIG = 5.0 mA, TJ = −40°C to 150°C
GateEmitter Leakage CurrentIGES384-700µADCVGE = 10 V, TJ = −40°C to 150°C
Gate Threshold VoltageVGE(th)1.1-1.9VDCIC = 1.0 mA, VGE = VCE, TJ = 25°C
CollectortoEmitter OnVoltageVCE(on)1.0-1.6VDCIC = 6.0 A, VGE = 4.0 V, TJ = 25°C
Forward Transconductancegfs8.0-25MhosVCE = 5.0 V, IC = 6.0 A, TJ = −40°C to 150°C
Input CapacitanceCISS400-1000pFVCC = 25 V, VGE = 0 V, f = 1.0 MHz, TJ = −40°C to 150°C
Output CapacitanceCOSS50-100pF
Transfer CapacitanceCRSS4.0-10pF
TurnOff Delay Time (Resistive)td(off)4.0-10µSVCC = 300 V, IC = 6.5 A, RG = 1.0 kΩ, RL = 46 Ω, TJ = 25°C
Fall Time (Resistive)tf9.0-15µSVCC = 300 V, IC = 6.5 A, RG = 1.0 kΩ, RL = 46 Ω, TJ = 25°C
TurnOn Delay Timetd(on)0.7-4.0µSVCC = 10 V, IC = 6.5 A, RG = 1.0 kΩ, RL = 1.5 Ω, TJ = 25°C
Rise Timetr4.5-7.0µSVCC = 10 V, IC = 6.5 A, RG = 1.0 kΩ, RL = 1.5 Ω, TJ = 25°C

2411200001_Littelfuse-NGD18N40ACLBT4G_C7247525.pdf

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