LRC S LBTN560Z4TZHG NPN Transistor Designed for Low Heat Generation and High Collector Current Gain

Key Attributes
Model Number: S-LBTN560Z4TZHG
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
1W
Transition Frequency(fT):
130MHz
Type:
NPN
Current - Collector(Ic):
5.2A
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
S-LBTN560Z4TZHG
Package:
SOT-223
Product Description

Product Overview

This NPN transistor offers low collector-emitter saturation voltage, high collector current capability, and high collector current gain, leading to high efficiency and reduced heat generation. Its smaller PCB area requirement makes it suitable for space-constrained applications. The S-prefix variant is AEC-Q101 qualified and PPAP capable, designed for automotive and other applications with unique site and control change requirements. The material complies with RoHS requirements and is Halogen Free.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Material Compliance: RoHS, Halogen Free
  • Certifications: AEC-Q101 qualified (S-prefix), PPAP capable (S-prefix)
  • Device Marking: LBTN560Z4TZHG, S-LBTN560Z4TZHG
  • Package: SOT223

Technical Specifications

ParameterSymbolMin.Typ.Max.Unit
MAXIMUM RATINGS
CollectorEmitter VoltageVCEO60V
CollectorBase VoltageVCBO60V
EmitterBase VoltageVEBO5V
Collector Current ContinuousIC5.2A
Peak Collector Current (tp 1 ms)ICM10.4A
Junction and Storage temperatureTJ,Tstg-55150C
THERMAL CHARACTERISTICS
Total Device Dissipation, FR4 Board (Note 1) @ TA = 25CPD1W
Thermal Resistance, JunctiontoAmbient(Note 1)RJA125C/W
Thermal Resistance, JunctiontoCaseRJC30C/W
ELECTRICAL CHARACTERISTICS (Ta= 25C)
Collector Cutoff Current (VCB = 60V, IE = 0 A)ICBO50nA
Collector Cutoff Current (VCB = 60V, IE = 0 A, Tj = 150 C)ICBO300nA
Emitter CutOff Current (VEB = 5 V, IC = 0 A)IEBO100nA
Collector-Emitter cutoff Current (VCE= 60V,IB=0)ICEO10A
CollectorEmitter Breakdown Voltage (IC = 1 mA,IB = 0)VBR(CEO)60V
CollectorBase Breakdown Voltage (IC = 100 A,IE = 0)VBR(CBO)60V
EmitterBase Breakdown Voltage (IE = 100 A,IC = 0)VBR(EBO)5V
DC Current Gain (VCE = 2 V, IC = 0.5 A)HFE80120
DC Current Gain (VCE = 2 V, IC = 1 A)HFE105150
DC Current Gain (VCE = 2 V, IC = 2 A)HFE145
DC Current Gain (VCE = 2 V, IC = 4 A)HFE100
DC Current Gain (VCE = 2 V, IC = 5.2 A)HFE50
CollectorEmitter Saturation Voltage (IC = 0.5 A, IB = 50 mA)VCE(sat)0.25V
CollectorEmitter Saturation Voltage (IC = 1 A, IB = 50 mA)VCE(sat)0.82V
CollectorEmitter Saturation Voltage (IC = 1 A, IB = 10 mA)VCE(sat)0.9V
CollectorEmitter Saturation Voltage (IC = 2 A, IB = 40 mA)VCE(sat)0.52V
CollectorEmitter Saturation Voltage (IC = 4 A, IB = 200 mA)VCE(sat)0.75V
CollectorEmitter Saturation Voltage (IC = 4 A, IB = 400 mA)VCE(sat)0.85V
CollectorEmitter Saturation Voltage (IC = 4 A, IB = 80 mA)VCE(sat)0.94V
CollectorEmitter Saturation Voltage (IC = 5.2 A, IB = 260 mA)VCE(sat)1.05V
BaseEmitter Saturation Voltage (IC = 1 A, IB = 100 mA)VBE(sat)0.82V
BaseEmitter Saturation Voltage (IC = 4 A, IB = 400 mA)VBE(sat)0.94V
Base-Emitter Turn-On Voltage (VCE = 2 V, IC = 2 A)VBE(on)0.9V
SMALLSIGNAL CHARACTERISTICS
Transitional Frequency (VCE = 10 V, IC = 100 mA ,f = 100 MHz)fT195MHz
Collector Capacitance (VCB = 10 V, IE = ie = 0 A,f = 1 MHz)Cc4870pF
SWITCHING CHARACTERISTICS
Delay time (VCC = 12.5 V, IC = 3 A,IB(on)= 0.15 A,IB(off) = 0.15 A)td15ns
Rise timetr95ns
Turn-on timeton110ns
Storage timets360ns
Fall timetf555ns
Turn-off timetoff130ns

2403191132_LRC-S-LBTN560Z4TZHG_C5447789.pdf

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