LRC S LBTN560Z4TZHG NPN Transistor Designed for Low Heat Generation and High Collector Current Gain
Product Overview
This NPN transistor offers low collector-emitter saturation voltage, high collector current capability, and high collector current gain, leading to high efficiency and reduced heat generation. Its smaller PCB area requirement makes it suitable for space-constrained applications. The S-prefix variant is AEC-Q101 qualified and PPAP capable, designed for automotive and other applications with unique site and control change requirements. The material complies with RoHS requirements and is Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS, Halogen Free
- Certifications: AEC-Q101 qualified (S-prefix), PPAP capable (S-prefix)
- Device Marking: LBTN560Z4TZHG, S-LBTN560Z4TZHG
- Package: SOT223
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| MAXIMUM RATINGS | |||||
| CollectorEmitter Voltage | VCEO | 60 | V | ||
| CollectorBase Voltage | VCBO | 60 | V | ||
| EmitterBase Voltage | VEBO | 5 | V | ||
| Collector Current Continuous | IC | 5.2 | A | ||
| Peak Collector Current (tp 1 ms) | ICM | 10.4 | A | ||
| Junction and Storage temperature | TJ,Tstg | -55 | 150 | C | |
| THERMAL CHARACTERISTICS | |||||
| Total Device Dissipation, FR4 Board (Note 1) @ TA = 25C | PD | 1 | W | ||
| Thermal Resistance, JunctiontoAmbient(Note 1) | RJA | 125 | C/W | ||
| Thermal Resistance, JunctiontoCase | RJC | 30 | C/W | ||
| ELECTRICAL CHARACTERISTICS (Ta= 25C) | |||||
| Collector Cutoff Current (VCB = 60V, IE = 0 A) | ICBO | 50 | nA | ||
| Collector Cutoff Current (VCB = 60V, IE = 0 A, Tj = 150 C) | ICBO | 300 | nA | ||
| Emitter CutOff Current (VEB = 5 V, IC = 0 A) | IEBO | 100 | nA | ||
| Collector-Emitter cutoff Current (VCE= 60V,IB=0) | ICEO | 10 | A | ||
| CollectorEmitter Breakdown Voltage (IC = 1 mA,IB = 0) | VBR(CEO) | 60 | V | ||
| CollectorBase Breakdown Voltage (IC = 100 A,IE = 0) | VBR(CBO) | 60 | V | ||
| EmitterBase Breakdown Voltage (IE = 100 A,IC = 0) | VBR(EBO) | 5 | V | ||
| DC Current Gain (VCE = 2 V, IC = 0.5 A) | HFE | 80 | 120 | ||
| DC Current Gain (VCE = 2 V, IC = 1 A) | HFE | 105 | 150 | ||
| DC Current Gain (VCE = 2 V, IC = 2 A) | HFE | 145 | |||
| DC Current Gain (VCE = 2 V, IC = 4 A) | HFE | 100 | |||
| DC Current Gain (VCE = 2 V, IC = 5.2 A) | HFE | 50 | |||
| CollectorEmitter Saturation Voltage (IC = 0.5 A, IB = 50 mA) | VCE(sat) | 0.25 | V | ||
| CollectorEmitter Saturation Voltage (IC = 1 A, IB = 50 mA) | VCE(sat) | 0.82 | V | ||
| CollectorEmitter Saturation Voltage (IC = 1 A, IB = 10 mA) | VCE(sat) | 0.9 | V | ||
| CollectorEmitter Saturation Voltage (IC = 2 A, IB = 40 mA) | VCE(sat) | 0.52 | V | ||
| CollectorEmitter Saturation Voltage (IC = 4 A, IB = 200 mA) | VCE(sat) | 0.75 | V | ||
| CollectorEmitter Saturation Voltage (IC = 4 A, IB = 400 mA) | VCE(sat) | 0.85 | V | ||
| CollectorEmitter Saturation Voltage (IC = 4 A, IB = 80 mA) | VCE(sat) | 0.94 | V | ||
| CollectorEmitter Saturation Voltage (IC = 5.2 A, IB = 260 mA) | VCE(sat) | 1.05 | V | ||
| BaseEmitter Saturation Voltage (IC = 1 A, IB = 100 mA) | VBE(sat) | 0.82 | V | ||
| BaseEmitter Saturation Voltage (IC = 4 A, IB = 400 mA) | VBE(sat) | 0.94 | V | ||
| Base-Emitter Turn-On Voltage (VCE = 2 V, IC = 2 A) | VBE(on) | 0.9 | V | ||
| SMALLSIGNAL CHARACTERISTICS | |||||
| Transitional Frequency (VCE = 10 V, IC = 100 mA ,f = 100 MHz) | fT | 195 | MHz | ||
| Collector Capacitance (VCB = 10 V, IE = ie = 0 A,f = 1 MHz) | Cc | 48 | 70 | pF | |
| SWITCHING CHARACTERISTICS | |||||
| Delay time (VCC = 12.5 V, IC = 3 A,IB(on)= 0.15 A,IB(off) = 0.15 A) | td | 15 | ns | ||
| Rise time | tr | 95 | ns | ||
| Turn-on time | ton | 110 | ns | ||
| Storage time | ts | 360 | ns | ||
| Fall time | tf | 555 | ns | ||
| Turn-off time | toff | 130 | ns | ||
2403191132_LRC-S-LBTN560Z4TZHG_C5447789.pdf
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